NSS40302PDR2G

NSS40302PDR2G
Mfr. #:
NSS40302PDR2G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT COMP NPN/PNP LO VCE 40V 6A
Lifecycle:
New from this manufacturer.
Datasheet:
NSS40302PDR2G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSS40302PDR2G DatasheetNSS40302PDR2G Datasheet (P4-P6)NSS40302PDR2G Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
Bipolar Transistors - BJT
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
SOIC-Narrow-8
Transistor Polarity:
NPN, PNP
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
40 V
Collector- Base Voltage VCBO:
40 V
Emitter- Base Voltage VEBO:
6 V
Maximum DC Collector Current:
3 A
Gain Bandwidth Product fT:
100 MHz
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
NSS40302PD
DC Current Gain hFE Max:
200 at 10 mA, 2 V
Height:
1.5 mm
Length:
5 mm
Packaging:
Reel
Width:
4 mm
Brand:
ON Semiconductor
DC Collector/Base Gain hfe Min:
200 at 10 mA, 2 V, 200 at 500 mA, 2 V, 180 at 1 A, 2 V, 180 at 2 A, 2 V
Pd - Power Dissipation:
783 mW
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
2500
Subcategory:
Transistors
Unit Weight:
0.005044 oz
Tags
NSS403, NSS40, NSS4, NSS
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans GP BJT NPN/PNP 40V 3A 783mW Automotive 8-Pin SOIC N T/R
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***r Electronics
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***ark
Transistor Array, Npn/pnp, 40V, Soic Rohs Compliant: Yes
***nell
TRANSISTOR ARRAY, NPN/PNP, 40V, SOIC; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 783mW; DC Collector Current: 3A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ponent Stockers USA
3000 mA 40 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
***th Star Micro
ON Semiconductors e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
***(Formerly Allied Electronics)
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40V 783mW 3A 320@2A2V 100MHz 82mV@2A200mA 2 NPN -55¡Í~+150¡Í@(Tj) SOIC-8 Bipolar Transistors - BJT ROHS
***th Star Micro
These transistors are part of the ON Semiconductor e2PowerEdge family of Low Vce(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters including ultra low saturation voltage Vce(sat) high current gain and Base/Emitter turn on voltage. Typical applications are current mirrors differential amplifiers DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones PDAs computers printers digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
***ical
Trans GP BJT NPN 40V 3A 783mW Automotive 8-Pin SOIC N T/R
***emi
Low VCE(sat) Transistor, Dual NPN, 40 V, 3.0 A
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon
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*** Stop Electro
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***el Electronic
Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
***emi
Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A
***th Star Micro
ON Semiconductors e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Part # Mfg. Description Stock Price
NSS40302PDR2G
DISTI # V72:2272_07309873
ON SemiconductorTrans GP BJT NPN/PNP 40V 3A Automotive 8-Pin SOIC N T/R
RoHS: Compliant
624
  • 500:$0.3608
  • 250:$0.3650
  • 100:$0.3794
  • 25:$0.5775
  • 10:$0.5780
  • 1:$0.6896
NSS40302PDR2G
DISTI # NSS40302PDR2GOSCT-ND
ON SemiconductorTRANS NPN/PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2300In Stock
  • 1000:$0.3336
  • 500:$0.4170
  • 100:$0.5275
  • 10:$0.6880
  • 1:$0.7800
NSS40302PDR2G
DISTI # NSS40302PDR2GOSDKR-ND
ON SemiconductorTRANS NPN/PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2300In Stock
  • 1000:$0.3336
  • 500:$0.4170
  • 100:$0.5275
  • 10:$0.6880
  • 1:$0.7800
NSS40302PDR2G
DISTI # NSS40302PDR2GOSTR-ND
ON SemiconductorTRANS NPN/PNP 40V 3A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 12500:$0.2699
  • 5000:$0.2733
  • 2500:$0.2935
NSS40302PDR2G
DISTI # 26622122
ON SemiconductorTrans GP BJT NPN/PNP 40V 3A Automotive 8-Pin SOIC N T/R
RoHS: Compliant
5000
  • 2500:$0.2446
NSS40302PDR2G
DISTI # 25774882
ON SemiconductorTrans GP BJT NPN/PNP 40V 3A Automotive 8-Pin SOIC N T/R
RoHS: Compliant
624
  • 500:$0.3608
  • 250:$0.3650
  • 100:$0.3794
  • 26:$0.5775
NSS40302PDR2G
DISTI # NSS40302PDR2G
ON SemiconductorTrans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Bulk (Alt: NSS40302PDR2G)
RoHS: Compliant
Min Qty: 1191
Container: Bulk
Americas - 0
  • 1191:$0.2739
  • 1193:$0.2719
  • 2384:$0.2689
  • 5955:$0.2649
  • 11910:$0.2589
NSS40302PDR2G
DISTI # NSS40302PDR2G
ON SemiconductorTrans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Tape and Reel (Alt: NSS40302PDR2G)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.2519
  • 5000:$0.2499
  • 10000:$0.2469
  • 15000:$0.2439
  • 25000:$0.2379
NSS40302PDR2G
DISTI # 31AC0988
ON SemiconductorTRANSISTOR ARRAY, NPN/PNP, 40V, SOIC,Transistor Polarity:NPN, PNP,Collector Emitter Voltage V(br)ceo:40V,Power Dissipation Pd:783mW,DC Collector Current:3A,DC Current Gain hFE:200hFE,Transistor Case Style:SOIC,No. of RoHS Compliant: Yes1819
  • 1000:$0.3090
  • 500:$0.3350
  • 250:$0.3600
  • 100:$0.3860
  • 50:$0.4570
  • 25:$0.5270
  • 10:$0.5980
  • 1:$0.7200
NSS40302PDR2G
DISTI # 13P5599
ON SemiconductorCOMP 40V NPN/PNP LO VCE / REEL0
  • 5000:$0.2670
  • 2500:$0.2750
  • 1000:$0.3230
  • 500:$0.3770
  • 250:$0.3880
  • 100:$0.4000
  • 25:$0.6120
  • 1:$0.7860
NSS40302PDR2G
DISTI # 70467471
ON SemiconductorON Semi NSS40302PDR2G Dual NPN+PNP Bipolar Transistor,3 A,40 V,8-Pin SOIC
RoHS: Compliant
0
  • 50:$0.3100
  • 100:$0.3000
  • 250:$0.2900
  • 500:$0.2800
  • 1250:$0.2600
NSS40302PDR2G
DISTI # 863-NSS40302PDR2G
ON SemiconductorBipolar Transistors - BJT COMP NPN/PNP LO VCE 40V 6A
RoHS: Compliant
2585
  • 1:$0.7200
  • 10:$0.5980
  • 100:$0.3860
  • 1000:$0.3090
  • 2500:$0.2610
  • 10000:$0.2510
  • 25000:$0.2410
NSS40302PDR2GON SemiconductorSmall Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon
RoHS: Compliant
29931
  • 1000:$0.2800
  • 500:$0.2900
  • 100:$0.3000
  • 25:$0.3200
  • 1:$0.3400
NSS40302PDR2G
DISTI # 2774845
ON SemiconductorTRANSISTOR ARRAY, NPN/PNP, 40V, SOIC
RoHS: Compliant
1879
  • 500:£0.2330
  • 250:£0.2650
  • 100:£0.2970
  • 25:£0.4770
  • 5:£0.5190
NSS40302PDR2G
DISTI # 2774845
ON SemiconductorTRANSISTOR ARRAY, NPN/PNP, 40V, SOIC
RoHS: Compliant
1819
  • 1000:$0.4440
  • 250:$0.5420
  • 100:$0.6610
  • 10:$0.9680
  • 1:$1.1300
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OMO.#: OMO-3296W-1-103LF-BOURNS

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Mfr.#: CRCW080510K0FKEAC

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Mfr.#: PIC12F1822-I/SN

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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of NSS40302PDR2G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.72
$0.72
10
$0.60
$5.98
100
$0.39
$38.60
1000
$0.31
$309.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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