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SSM6K341NU,LF DatasheetSSM6K341NU,LF Datasheet (P4-P6)SSM6K341NU,LF Datasheet (P7-P8)

SSM6K341NU,LF

Mfr. #:
SSM6K341NU,LF
Manufacturer:
Toshiba
Description:
MOSFET LowON Res MOSFET ID=6A VDSS=100V
Lifecycle:
New from this manufacturer.
Datasheet:
SSM6K341NU,LF Datasheet
ECAD Model:
Stock:
19
On Order:
2002
Enter Quantity:
Current price of SSM6K341NU,LF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Quantity
Unit Price
Ext. Price
1
$0.49
$0.49
10
$0.36
$3.62
100
$0.23
$22.80
1000
$0.17
$171.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
UDFN6B-6
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
28 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
9.3 nC
Minimum Operating Temperature:
-
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.25 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
Toshiba
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
48 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
18 ns
Typical Turn-On Delay Time:
63 ns
Unit Weight:
0.000300 oz
Tags
SSM6K3, SSM6K, SSM6, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 60V 6A 6-Pin UDFN-B EP T/R
***et
N-Channel MOSFET 60V Drain to Source Voltage 6A Drain Current 1.28W Power Dissipation Surface Mount 6-Pin UDFN T/R
***i-Key
MOSFET N-CH 60V 6A 6-UDFNB
SSM6K Silicon N-Channel MOSFETs
Toshiba SSM6K Silicon N-Channel Small Signal MOSFETs are designed with advanced technologies, achieving low RON characteristics. The SSM6K is very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.
MOSFETs for Industrial and Lighting Applications
Toshiba 60V and 100V Power MOSFETs for Industrial and Lighting Applications include the 60V SSM3K341 and the 100V SSM3K361 families. These new MOSFETs feature industry-leading low on-resistance and are suited to load switching in television and industrial lighting. They are also good candidates for industrial automation systems require low to medium amounts of power.  
SSM6 Low On-resistance MOSFET
Toshiba SSM6 Low On-resistance MOSFETs with high-speed switching operate as both power management switches and analog switches. These MOSFETs provide very low on-resistance as low as 1.1mΩ to a 115Ω maximum for different sets of gate to source voltage range. The SSM6 MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance and operate as DC to DC converters. The SSM6 MOSFETs drive a 1.2V minimum to 4.5V maximum gate voltage. These MOSFETs deliver less drain power dissipation up to 150mW producing less heat. The SM66 MOSFETs operate at 12V to 100V input voltage range.   
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