IMX8-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Mounting Style:

SMD/SMT

Package / Case:

SOT-26-6

Transistor Polarity:

NPN

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

120 V

Collector- Base Voltage VCBO:

120 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.5 V

Maximum DC Collector Current:

0.05 A

Gain Bandwidth Product fT:

140 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

IMX8

DC Current Gain hFE Max:

820

Height:

1.1 mm

Length:

3 mm

Packaging:

Reel

Width:

1.6 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

0.05 A

DC Collector/Base Gain hfe Min:

180

Pd - Power Dissipation:

300 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Unit Weight:

0.001058 oz

Tags

IMX8, IMX