IPU80R1K4P7AKMA1

IPU80R1K4P7AKMA1
Mfr. #:
IPU80R1K4P7AKMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPU80R1K4P7AKMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
4 A
Rds On - Drain-Source Resistance:
1.4 Ohms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
10 nC
Minimum Operating Temperature:
- 50 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
32 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
6.22 mm
Length:
6.73 mm
Series:
CoolMOS P7
Width:
2.38 mm
Brand:
Infineon Technologies
Fall Time:
20 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
1500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
IPU80R1K4P7 SP001422742
Unit Weight:
0.011993 oz
Tags
IPU80R1K4P, IPU80R1K4, IPU80R1, IPU80, IPU8, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS™ Power Mosfet - IPAK
***nell
MOSFET, N-CH, 800V, 4A, TO-251; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 32W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
Part # Mfg. Description Stock Price
IPU80R1K4P7AKMA1
DISTI # IPU80R1K4P7AKMA1-ND
Infineon Technologies AGMOSFET N-CH 800V 4A IPAK
RoHS: Compliant
Min Qty: 1500
Container: Tube
Temporarily Out of Stock
  • 1500:$0.4476
IPU80R1K4P7AKMA1
DISTI # IPU80R1K4P7AKMA1
Infineon Technologies AGTrans MOSFET N 800V 4A 3-Pin TO-251 Tube - Bulk (Alt: IPU80R1K4P7AKMA1)
RoHS: Compliant
Min Qty: 962
Container: Bulk
Americas - 0
  • 9620:$0.3299
  • 4810:$0.3359
  • 2886:$0.3479
  • 1924:$0.3609
  • 962:$0.3739
IPU80R1K4P7AKMA1
DISTI # IPU80R1K4P7AKMA1
Infineon Technologies AGTrans MOSFET N 800V 4A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPU80R1K4P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube
Americas - 0
  • 15000:$0.3609
  • 9000:$0.3669
  • 6000:$0.3799
  • 3000:$0.3939
  • 1500:$0.4089
IPU80R1K4P7AKMA1
DISTI # SP001422742
Infineon Technologies AGTrans MOSFET N 800V 4A 3-Pin TO-251 Tube (Alt: SP001422742)
RoHS: Compliant
Min Qty: 75
Container: Tube
Europe - 0
  • 750:€0.3379
  • 450:€0.3639
  • 300:€0.3939
  • 150:€0.4299
  • 75:€0.5249
IPU80R1K4P7AKMA1
DISTI # 34AC1729
Infineon Technologies AGMOSFET, N-CH, 800V, 4A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes1435
  • 1000:$0.4310
  • 500:$0.5450
  • 100:$0.6180
  • 10:$0.8040
  • 1:$0.9390
IPU80R1K4P7AKMA1
DISTI # 726-IPU80R1K4P7AKMA1
Infineon Technologies AGMOSFET
RoHS: Compliant
1720
  • 1:$0.9300
  • 10:$0.7960
  • 100:$0.6120
  • 500:$0.5400
  • 1000:$0.4270
IPU80R1K4P7AKMA1Infineon Technologies AGPower Field-Effect Transistor, 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
RoHS: Compliant
1825
  • 1000:$0.3400
  • 500:$0.3600
  • 100:$0.3800
  • 25:$0.3900
  • 1:$0.4200
IPU80R1K4P7AKMA1
DISTI # 1300931P
Infineon Technologies AGMOSFET N-CH 800V 4A COOLMOS P7 TO-251, TU1520
  • 25:£0.3000
IPU80R1K4P7AKMA1
DISTI # 2781189
Infineon Technologies AGMOSFET, N-CH, 800V, 4A, TO-2511420
  • 500:£0.3910
  • 250:£0.4180
  • 100:£0.4440
  • 10:£0.5770
  • 1:£0.6740
IPU80R1K4P7AKMA1
DISTI # 2781189
Infineon Technologies AGMOSFET, N-CH, 800V, 4A, TO-251
RoHS: Compliant
1435
  • 5000:$0.5740
  • 1000:$0.6050
  • 500:$0.6400
  • 250:$0.7390
  • 100:$0.8760
  • 25:$1.0800
  • 5:$1.2400
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Mfr.#: ERJ-U1DJ100U

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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of IPU80R1K4P7AKMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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