BSC520N15NS3 G

BSC520N15NS3 G
Mfr. #:
BSC520N15NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 150V 21A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC520N15NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSC520N15NS3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Id - Continuous Drain Current:
21 A
Rds On - Drain-Source Resistance:
52 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
8.7 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
57 W
Configuration:
Single
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Type:
OptiMOS 3 Power-Transistor
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
21 S, 11 S
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
10 ns
Typical Turn-On Delay Time:
7 ns
Part # Aliases:
BSC520N15NS3GATMA1 BSC52N15NS3GXT SP000521716
Unit Weight:
0.007055 oz
Tags
BSC520N15NS3G, BSC520N15NS3, BSC520, BSC52, BSC5, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
BSC520N15NS3GATMA1
DISTI # V72:2272_06384522
Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
3520
  • 1:$1.2309
BSC520N15NS3GATMA1
DISTI # BSC520N15NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 150V 21A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
879In Stock
  • 1000:$0.7185
  • 500:$0.9102
  • 100:$1.1736
  • 10:$1.4850
  • 1:$1.6800
BSC520N15NS3GATMA1
DISTI # BSC520N15NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 150V 21A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
879In Stock
  • 1000:$0.7185
  • 500:$0.9102
  • 100:$1.1736
  • 10:$1.4850
  • 1:$1.6800
BSC520N15NS3GATMA1
DISTI # BSC520N15NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 150V 21A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.6186
BSC520N15NS3GATMA1
DISTI # 30679434
Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
3520
  • 3000:$0.6141
  • 1000:$0.6339
  • 500:$0.6536
  • 250:$0.7308
  • 100:$0.7388
  • 50:$0.9232
  • 25:$0.9343
  • 11:$0.9455
BSC520N15NS3 G
DISTI # BSC520N15NS3 G
Infineon Technologies AGTrans MOSFET N-CH 150V 21A 8-Pin TDSON T/R (Alt: BSC520N15NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
    BSC520N15NS3GXT
    DISTI # BSC520N15NS3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 150V 21A 8-Pin TDSON EP - Tape and Reel (Alt: BSC520N15NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$0.6089
    • 10000:$0.5869
    • 20000:$0.5659
    • 30000:$0.5459
    • 50000:$0.5369
    BSC520N15NS3GATMA1
    DISTI # 47W3314
    Infineon Technologies AGMOSFET, N CHANNEL, 150V, 21A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$1.3900
    • 10:$1.1900
    • 100:$0.9100
    • 500:$0.8040
    • 1000:$0.6350
    • 2500:$0.5890
    • 10000:$0.5420
    BSC520N15NS3 G
    DISTI # 726-BSC520N15NS3GXT
    Infineon Technologies AGMOSFET N-Ch 150V 21A TDSON-8 OptiMOS 3
    RoHS: Compliant
    237
    • 1:$1.3900
    • 10:$1.1900
    • 100:$0.9100
    • 500:$0.8040
    • 1000:$0.6350
    BSC520N15NS3GATMA1
    DISTI # C1S322000403808
    Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 8-Pin TDSON EP T/R
    RoHS: Compliant
    3520
    • 100:$0.8765
    • 50:$0.9318
    • 25:$1.0603
    • 10:$1.0887
    BSC520N15NS3GATMA1
    DISTI # 2212818
    Infineon Technologies AGMOSFET, N-CH, 150V, 21A, 8TDSON
    RoHS: Compliant
    0
    • 1:$2.2000
    • 10:$1.8800
    • 100:$1.4400
    • 500:$1.2800
    • 1000:$1.0100
    • 5000:$0.8910
    BSC520N15NS3GATMA1
    DISTI # 2212818
    Infineon Technologies AGMOSFET, N-CH, 150V, 21A, 8TDSON
    RoHS: Compliant
    0
    • 5:£1.0000
    • 25:£0.7980
    • 100:£0.6160
    • 250:£0.6150
    • 500:£0.6140
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    Availability
    Stock:
    Available
    On Order:
    1991
    Enter Quantity:
    Current price of BSC520N15NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.38
    $1.38
    10
    $1.18
    $11.80
    100
    $0.91
    $91.00
    500
    $0.80
    $402.00
    1000
    $0.64
    $635.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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