IRF9321TRPBF

Mfr. #:: IRF9321TRPBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT P-Ch -30V -15A 7.2mOhm
Lifecycle:: New from this manufacturer.
Datasheet:: IRF9321TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF9321TRPBF Datasheet IRF9321TRPBF Datasheet (P4-P6)IRF9321TRPBF Datasheet (P7-P8)
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More Information:: IRF9321TRPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 15 A

Rds On - Drain-Source Resistance:: 11.2 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 34 nC

Pd - Power Dissipation:: 2.5 W

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Width:: 3.9 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Part # Aliases:: SP001577608

Unit Weight:: 0.019048 oz

Tags: IRF9321, IRF932, IRF93, IRF9, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

IRF9321TRPBF Description

***ark: Mosfet Transistor, P Channel, -15 A, -30 V, 5.9 Mohm, -10 V, -1.8 V Rohs Compliant: Yes

***ure Electronics: P-Channel 30 V -15A 7.2 mOhm 2.5 W SMT Hexfet Power MosFet - SOIC-8

***Yang: Trans MOSFET P-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***nell: MOSFET,P CH,30V,15A,SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -15A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0059ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***ark: N CH POWER MOSFET, HEXFET, 30V, 17.2A, SOIC-8; Transistor Polarity:N Channel; Co

***ernational Rectifier: Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***ical: Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC

***ark: Mosfet Transistor, N Channel, 16 A, 30 V, 0.0055 Ohm, 10 V, 2.25 V Rohs Compliant: Yes

***roFlash: Mosfet, Power; P-ch; Vdss 30V; Rds(on) 5.5MILLIOHMS; Id 16A; SO-8; Pd 2.5W; Vgs +/-20V

***ure Electronics: Single N-Channel 30 V 8.7 mOhm 27 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: MOSFET N-CH 30V 16A 8-SOIC / Trans MOSFET N-CH 30V 16A 8-Pin SOIC T/R

***id Electronics: Transistor MOSFET N-Ch. 16A/30V SO8 IRF 7805 ZTRPBF

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.25V; Power Diss

***(Formerly Allied Electronics): IRF8714PBF N-channel MOSFET Transistor; 14 A; 30 V; 8-Pin SOIC

***roFlash: Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET¬Æ Power Mosfet - SOIC-8

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P

***ure Electronics: Single N-Channel 30 V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET; N Ch.; 30V; 14A; 8.5 MOHM; 8.3 NC QG; SO-8; Pb-Free

***ical: Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.0069Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***emi: Power MOSFET 30V, 89A, 7 mOhm, Single N-Channel, SO8-FL, Logic Level.

***ponent Stockers USA: 16 A 30 V 0.0114 ohm N-CHANNEL Si POWER MOSFET

***r Electronics: Power Field-Effect Transistor, 16A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

*** Electronics: MOSFET Single N-Channel 30V,89A,7mOhm

***el Electronic: RES SMD 48.7K OHM 1% 1/16W 0402

***ark: MOSFET, N-CH, 30V, 16A, DFN-5; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; On Resistance Rds(on):0.0047ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

***ure Electronics: N-Channel 25 V 0.0086 Ohm 5 W Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R

***nell: MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:18A; On State Resistance:0.0086ohm; Voltage Vgs Rds on Measurement:10V; Case Style:SO-8; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Max Current Id:12.7A; Max Junction Temperature Tj:150°C; Max Voltage Vds:25V; Max Voltage Vgs:12V; Max Voltage Vgs th:1.4V; Min Voltage Vgs th:0.6V; Power Dissipation:2.5W; Power Dissipation Pd:5W; Rds Measurement Voltage:10V; Rise Time:11ns; Transistor Case Style:SO

***ment14 APAC: P CHANNEL, MOSFET, -30V, -16A, SOIC; TRA; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A;

***ure Electronics: Single P-Channel 30 V 10.2 mOhm 31 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***nell: MOSFET,P CH,30V,16A,SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -16A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power

***(Formerly Allied Electronics): MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.7Milliohms; ID 17.2A; SO-8; PD 2.5W; VGS +/-2

***ure Electronics: Single N-Channel 30 V 6.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC Tube

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; On Resistance Rds(On):0.0047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes

***ure Electronics: Single N-Channel 30 V 5.2 mOhms Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 30V 16.3A 8-Pin SOIC N T/R

***ronik: N-CH 30V 25A 5mOhm SO-8 RoHSconf

***S: French Electronic Distributor since 1988

***et: TRANS MOSFET N-CH 30V 16A 8SOIC

***ser: MOSFETs 30V N-Channel PT SyncFET

***i-Key: MOSFET N-CH 30V 16A 8SOIC

***eco: 008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, SMD (S1)

***ser: MOSFETs 30V N-Ch PowerTrench SyncFET

IRF9321TRPBF More Information

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRF9321TRPBF DISTI # V72:2272_13891155	Infineon Technologies AG	Trans MOSFET P-CH 30V 15A 8-Pin SOIC N T/R	4286	3000:$0.2967 1000:$0.2972 500:$0.3113 250:$0.3459 100:$0.3577 25:$0.4972 10:$0.4995 1:$0.5719
IRF9321TRPBF DISTI # IRF9321TRPBFCT-ND	Infineon Technologies AG	MOSFET P-CH 30V 15A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7170In Stock	1000:$0.3682 500:$0.4602 100:$0.6213 10:$0.8050 1:$0.9200
IRF9321TRPBF DISTI # IRF9321TRPBFDKR-ND	Infineon Technologies AG	MOSFET P-CH 30V 15A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7170In Stock	1000:$0.3682 500:$0.4602 100:$0.6213 10:$0.8050 1:$0.9200
IRF9321TRPBF DISTI # IRF9321TRPBFTR-ND	Infineon Technologies AG	MOSFET P-CH 30V 15A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	4000In Stock	4000:$0.3240
IRF9321TRPBF DISTI # 31066393	Infineon Technologies AG	Trans MOSFET P-CH 30V 15A 8-Pin SOIC N T/R	12000	4000:$0.3251
IRF9321TRPBF DISTI # 27551216	Infineon Technologies AG	Trans MOSFET P-CH 30V 15A 8-Pin SOIC N T/R	4286	3000:$0.2967 1000:$0.2972 500:$0.3113 250:$0.3459 100:$0.3577 28:$0.4972
IRF9321TRPBF DISTI # 31073318	Infineon Technologies AG	Trans MOSFET P-CH 30V 15A 8-Pin SOIC N T/R	100	100:$0.5036 50:$0.6158 28:$0.9244
IRF9321TRPBF DISTI # IRF9321TRPBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 15A 8-Pin SOIC N T/R (Alt: IRF9321TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 20000	4000:$0.2475 8000:$0.2373 12000:$0.2341 20000:$0.2250 40000:$0.2221 100000:$0.2166 200000:$0.2113
IRF9321TRPBF DISTI # IRF9321TRPBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel (Alt: IRF9321TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2339 8000:$0.2249 16000:$0.2169 24000:$0.2099 40000:$0.2059
IRF9321TRPBF DISTI # SP001577608	Infineon Technologies AG	Trans MOSFET P-CH 30V 15A 8-Pin SOIC N T/R (Alt: SP001577608) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.3759 8000:€0.3179 16000:€0.2839 24000:€0.2549 40000:€0.2369
IRF9321TRPBF DISTI # 13AC9220	Infineon Technologies AG	MOSFET, P-CH, -30V, -15A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-15A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0059ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.8V,Power , RoHS Compliant: Yes	0	1:$0.8790 10:$0.7390 25:$0.6580 50:$0.5770 100:$0.4970 250:$0.4680 500:$0.4370 1000:$0.4080
IRF9321TRPBF DISTI # 70019293	Infineon Technologies AG	IRF9321TRPBF P-channel MOSFET Transistor,15 A,30 V,8-Pin SOIC RoHS: Compliant	0	4000:$0.9520
IRF9321TRPBF DISTI # 942-IRF9321TRPBF	Infineon Technologies AG	MOSFET MOSFT P-Ch -30V -15A 7.2mOhm RoHS: Compliant	4981	1:$0.7600 10:$0.6300 100:$0.4070 1000:$0.3250 4000:$0.2750
IRF9321TRPBF DISTI # 9154982P	Infineon Technologies AG	MOSFET P-CHANNEL HEXFET 30V 15A SO-8, RL	13780	100:£0.3240 500:£0.2920 1000:£0.2600 2500:£0.2390
IRF9321TRPBF DISTI # IRF9321PBF-GURT	Infineon Technologies AG	P-Ch 30V 15A 2,5W 0,0072R SO8 RoHS: Compliant	0	50:€0.2780 100:€0.2380 500:€0.2180 2000:€0.2100
IRF9321TRPBF DISTI # C1S322000487448	Infineon Technologies AG	MOSFETs	100	100:$0.3990 50:$0.4870 10:$0.7310
IRF9321TRPBF DISTI # C1S322000487457	Infineon Technologies AG	MOSFETs	4286	100:$0.3563 50:$0.4839 25:$0.4964 10:$0.4990
IRF9321TRPBF DISTI # 2725928	Infineon Technologies AG	MOSFET, P-CH, -30V, -15A, SOIC RoHS: Compliant	101	1:$1.2100 10:$0.9970 100:$0.6440
IRF9321TRPBF DISTI # 2725928	Infineon Technologies AG	MOSFET, P-CH, -30V, -15A, SOIC RoHS: Compliant	0	5:£0.5130 25:£0.5020 100:£0.3140 250:£0.3060 500:£0.2980
IRF9321TRPBF DISTI # XSFP00000158475	Infineon Technologies AG	PowerField-EffectTransistor,15AI(D),30V,0.0072ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET RoHS: Compliant	5384	4000:$0.4700 5384:$0.4273

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IRF9321TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes