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IRF640NLPBF

IRF640NLPBF
Mfr. #:
IRF640NLPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors MOSFET MOSFT 200V 18A 150mOhm 44.7nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF640NLPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IRF640NLPBF more Information
Product Attribute
Attribute Value
Manufacturer
IR
Product Category
FETs - Single
Packaging
Tube
Unit-Weight
0.084199 oz
Mounting-Style
Through Hole
Package-Case
I2PAK-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
150 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
5.5 ns
Rise-Time
19 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
18 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Rds-On-Drain-Source-Resistance
150 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
23 ns
Typical-Turn-On-Delay-Time
10 ns
Qg-Gate-Charge
44.7 nC
Forward-Transconductance-Min
6.8 S
Channel-Mode
Enhancement
Tags
IRF640N, IRF640, IRF64, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-262;PD 150W;VGS +/-20V
***ure Electronics
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-262-3
*** Source Electronics
MOSFET N-CH 200V 18A TO-262 / Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
N CHANNEL MOSFET, 200V, 18A, TO-262; Tra; N CHANNEL MOSFET, 200V, 18A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Part # Mfg. Description Stock Price
IRF640NLPBF
DISTI # V99:2348_13890573		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		987
  • 10000:$0.6538
  • 5000:$0.6767
  • 2500:$0.6988
  • 1000:$0.7413
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
  • 1:$1.2932
IRF640NLPBF
DISTI # IRF640NLPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 18A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube		2168In Stock
  • 1000:$1.0174
  • 500:$1.2056
  • 100:$1.5191
  • 10:$1.8640
  • 1:$2.0500
IRF640NLPBF
DISTI # 27158271		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		7506
  • 1000:$0.8336
  • 500:$1.0060
  • 100:$1.1491
  • 27:$1.4414
IRF640NLPBF
DISTI # 26198161		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		987
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
IRF640NLPBF
DISTI # IRF640NLPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF640NLPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.6569
  • 2000:$0.6329
  • 4000:$0.6099
  • 6000:$0.5889
  • 10000:$0.5789
IRF640NLPBF
DISTI # SP001563296		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 (Alt: SP001563296)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.6069
  • 10:€0.5399
  • 25:€0.4859
  • 50:€0.4409
  • 100:€0.4049
  • 500:€0.3729
  • 1000:€0.3469
IRF640NLPBF
DISTI # 63J7350		Infineon Technologies AGN CHANNEL MOSFET, 200V, 18A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:200V,On Resistance Rds(on):150mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- , RoHS Compliant: Yes1000
  • 1:$1.6800
  • 10:$1.4300
  • 100:$1.1400
  • 500:$0.9980
  • 1000:$0.8270
IRF640NLPBF
DISTI # 70017531		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.15Ohm,ID 18A,TO-262,PD 150W,VGS +/-20V
RoHS: Compliant		0
  • 650:$2.1500
IRF640NLPBFInternational Rectifier 
RoHS: Not Compliant		2350
  • 1000:$0.8400
  • 500:$0.8800
  • 100:$0.9200
  • 25:$0.9600
  • 1:$1.0300
IRF640NLPBF
DISTI # 942-IRF640NLPBF		Infineon Technologies AGMOSFET MOSFT 200V 18A 150mOhm 44.7nC
RoHS: Compliant		731
  • 1:$1.6800
  • 10:$1.4300
  • 100:$1.1400
  • 500:$0.9980
  • 1000:$0.8270
IRF640NLPBF
DISTI # 8312859		Infineon Technologies AGHEXFET N-CH MOSFET 18A 200V TO-262, PK560
  • 5:£1.3020
  • 25:£1.0280
  • 50:£0.9280
  • 125:£0.8260
  • 250:£0.8100
IRF640NLPBF
DISTI # IRF640NLPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,18A,150W,TO262352
  • 1:$1.0200
  • 3:$0.9600
  • 10:$0.8100
  • 100:$0.7300
IRF640NLPBF
DISTI # 2576887		Infineon Technologies AGMOSFET, N-CH, 200V, 18A, TO-262-3
RoHS: Compliant		1000
  • 1:$2.6600
  • 10:$2.2700
  • 100:$1.8100
  • 500:$1.5800
  • 1000:$1.3200
IRF640NLPBF.
DISTI # 9537511		Infineon Technologies AGN CHANNEL MOSFET, 200V, 18A, TO-262
RoHS: Compliant		64
  • 1:$1.0300
IRF640NLPBF
DISTI # 2576887		Infineon Technologies AGMOSFET, N-CH, 200V, 18A, TO-262-3
RoHS: Compliant		1025
  • 5:£1.2000
  • 25:£0.8260
  • 100:£0.8220
  • 250:£0.8180
  • 500:£0.7630
IRF640NLPBF
DISTI # C1S322000481453		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		987
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
Image Part # Description
IRF644NSTRLPBF

Mfr.#: IRF644NSTRLPBF

OMO.#: OMO-IRF644NSTRLPBF

 MOSFET N-Chan 250V 14 Amp
IRF640,IRF640A,IRF640B

Mfr.#: IRF640,IRF640A,IRF640B

OMO.#: OMO-IRF640-IRF640A-IRF640B-1190

 New and Original
IRF640A8H

Mfr.#: IRF640A8H

OMO.#: OMO-IRF640A8H-1190

 New and Original
IRF640FP

Mfr.#: IRF640FP

OMO.#: OMO-IRF640FP-STMICROELECTRONICS

 MOSFET N-CH 200V 18A TO-220FP
IRF640NS

Mfr.#: IRF640NS

OMO.#: OMO-IRF640NS-1190

 MOSFET N-CHANNEL 200V 18A D2PAK, EA
IRF640R

Mfr.#: IRF640R

OMO.#: OMO-IRF640R-1190

 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF643

Mfr.#: IRF643

OMO.#: OMO-IRF643-1190

 Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF644NLPBF

Mfr.#: IRF644NLPBF

OMO.#: OMO-IRF644NLPBF-VISHAY

 MOSFET N-CH 250V 14A TO-262
IRF644NSTRLPBF

Mfr.#: IRF644NSTRLPBF

OMO.#: OMO-IRF644NSTRLPBF-VISHAY

 MOSFET N-CH 250V 14A D2PAK
IRF645A

Mfr.#: IRF645A

OMO.#: OMO-IRF645A-1190

 New and Original
Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of IRF640NLPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.51
$0.51
10
$0.49
$4.89
100
$0.46
$46.29
500
$0.44
$218.60
1000
$0.41
$411.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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