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IRF6662TR1PBF

IRF6662TR1PBF
Mfr. #:
IRF6662TR1PBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 100V 47A 22mOhm 22nC Qg
Lifecycle:
New from this manufacturer.
Datasheet:
IRF6662TR1PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6662TR1PBF DatasheetIRF6662TR1PBF Datasheet (P4-P6)IRF6662TR1PBF Datasheet (P7-P9)IRF6662TR1PBF Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DirectFET-MZ
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
8.3 A
Rds On - Drain-Source Resistance:
17.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
4.9 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
22 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
89 W
Configuration:
Single
Packaging:
Reel
Height:
0.7 mm
Length:
6.35 mm
Transistor Type:
1 N-Channel
Width:
5.05 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
11 S
Fall Time:
5.9 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
7.5 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Part # Aliases:
SP001559718
Unit Weight:
0.035274 oz
Tags
IRF6662, IRF666, IRF66, IRF6, IRF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 17.5 Milliohms; Id 8.3A; Mz; Pd 2.8W; Vgs +/-20
***ernational Rectifier
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N, DIRECTFET, MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.9V; Power Dissipation Pd:2.8mW; Transistor Case Style:DirectFET MZ; No. of Pins:5Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:39mJ; Base Number:6662; Cont Current Id @ 70°C:6.6A; Current Id Max:6.6A; Fall Time tf:5.9ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Pulse Current Idm:66A; Rise Time:7.5ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:Surface Mount Device; Voltage Vds:25V; Voltage Vds Typ:100V; Voltage Vgs Max:3.9V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
IRF6662TR1PBF
DISTI # IRF6662TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6662TR1PBF
    DISTI # IRF6662TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6662TR1PBF
      DISTI # IRF6662TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6662TR1PBF
        DISTI # 70017404        		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 17.5 Milliohms,ID 8.3A,MZ,PD 2.8W,VGS +/-20
        RoHS: Compliant        		0
        • 1000:$1.9400
        • 2000:$1.7600
        IRF6662TR1PBF
        DISTI # 942-IRF6662TR1PBF        		Infineon Technologies AGMOSFET MOSFT 100V 47A 22mOhm 22nC Qg
        RoHS: Compliant        		0
          IRF6662TR1PBF
          DISTI # 1388570          		Infineon Technologies AGMOSFET, N, DIRECTFET, MZ
          RoHS: Compliant          		0
          • 2000:$2.3100
          • 1000:$2.4800
          • 500:$2.8000
          • 100:$3.1300
          • 10:$3.8700
          • 1:$4.7000
          Image Part # Description
          IRF6662TRPBF

          Mfr.#: IRF6662TRPBF

          OMO.#: OMO-IRF6662TRPBF

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          Mfr.#: IRF6665TR1

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          Mfr.#: IRF6665TR1PBF

          OMO.#: OMO-IRF6665TR1PBF-INFINEON-TECHNOLOGIES

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          OMO.#: OMO-IRF6668TR-1190

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          IRF6668TR1PBF

          Mfr.#: IRF6668TR1PBF

          OMO.#: OMO-IRF6668TR1PBF-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 80V 55A DIRECTFET
          IRF6662TRPBF

          Mfr.#: IRF6662TRPBF

          OMO.#: OMO-IRF6662TRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ
          Availability
          Stock:
          Available
          On Order:
          5000
          Enter Quantity:
          Current price of IRF6662TR1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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