BSL308PEH6327XTSA1

Mfr. #:: BSL308PEH6327XTSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET SMALL SIGNAL+P-CH
Lifecycle:: New from this manufacturer.
Datasheet:: BSL308PEH6327XTSA1 Datasheet
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More Information:: BSL308PEH6327XTSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TSOP-6

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 2 A

Rds On - Drain-Source Resistance:: 130 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: - 1.2 nC, - 1.2 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 500 mW (1/2 W)

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.1 mm

Length:: 3 mm

Transistor Type:: 1 P-Channel

Width:: 1.5 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 4.6 S, 4.6 S

Fall Time:: 2.8 ns, 2.8 ns

Product Type:: MOSFET

Rise Time:: 7.7 ns, 7.7 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 15.3 ns, 15.3 ns

Typical Turn-On Delay Time:: 5.6 ns, 5.6 ns

Part # Aliases:: BSL308PE H6327 SP001101004

Unit Weight:: 0.000526 oz

Tags: BSL308PEH, BSL308P, BSL308, BSL30, BSL3, BSL

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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BSL308PEH6327XTSA1 Description

***et Japan: Transistor MOSFET Array Dual P-CH 30V 2A 6-Pin TSOP T/R

***ure Electronics: BSL308PE Series 30 V 2 A 80 mOhm 0.5 W 5 nC Dual P-Channel MOSFET - TSOP-6

***ark: Mosfet, P-Ch, 30V, 2A, 150Deg C, 0.5W; Channel Type:p Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:2A; Continuous Drain Current Id P Channel:2A Rohs Compliant: Yes

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.1 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 80 / Gate-Source Voltage V = 20 / Fall Time ns = 2.8 / Rise Time ns = 7.7 / Turn-OFF Delay Time ns = 15.3 / Turn-ON Delay Time ns = 5.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TSOP / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

***et Japan: Transistor MOSFET Array Dual N-CH 30V 2.3A 6-Pin TSOP T/R

***ark: Mosfet, Aec-Q101, Dual N-Ch, 2.3A, Tsop; Transistor Polarity:dual N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.043Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Rohs Compliant: Yes

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***ark: P-Channel Power MOSFET, -30V, -5A, 59mOhm, Single CPH6 / REEL RoHS Compliant: Yes

***emi: P-Channel Power MOSFET, -30V, -5A, 59mΩ

***ment14 APAC: MOSFET, P-CH, -30V, -5A, CPH; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Source Voltage Vds:-30V; On Resistance

***nell: MOSFET, P-CH, -30V, -5A, CPH; Transistor Polarity: P Channel; Continuous Drain Current Id: -5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.6V; Power Dissipation Pd: 1.6W; Transistor Case Style: CPH; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***Yang: Transistor MOSFET Array Dual N-CH 30V 2.5A 6-Pin TSOT-23 T/R - Tape and Reel

***emi: Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ

***eco: Transistor MOSFET N-Channel 30 Volt 2.5A 6-Pin SuperSOT

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

***ment14 APAC: MOSFET, DUAL, NN, SUPERSOT-6; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:10A; SMD Marking:FDC6561AN; Termination Type:SMD; Uni / Bi Directional Polarity:NN; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

***ure Electronics: N & P Channel 30 V 60 mOhm Complementary Pair Enhancement Mode Mosfet-TSOT-23-6

***p One Stop: Trans MOSFET N/P-CH 30V 3.4A/2.8A Automotive 6-Pin TSOT-23 T/R

***ment14 APAC: MOSFET, COMPLEMENTARY, 30V, 3.4A, TSOT26; Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.4A; Source Voltage Vds:30V; On

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: TSOT-26 Polarity: N/P Variants: Enhancement mode Power dissipation: 0.84 W

***roFlash: Power Field-Effect Transistor, 2.7A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, COMPLEMENTARY, 30V, 3.4A, TSOT26; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 3.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.3V; Power Dissipation Pd: 840mW; Transistor Case Style: TSOT-26; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans MOSFET N-CH 20V 2.5A Automotive 6-Pin TSOP T/R

***nell: MOSFET, AEC-Q101, DUAL N-CH, 20V, TSOP-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Volta

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***r Electronics: Power Field-Effect Transistor, 4.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH Si 60V 4.5A 6-Pin CPH T/R

***nell: MOSFET, N CH, 60V, 4.5A, SOT346; Transistor Polarity:N-Channel; Current Id Max:4.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:1.6W; Transistor Case Style:SOT-346; No. of Pins:6

BSL308PEH6327XTSA1 More Information

Small Signal Power MOSFETs: Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
BSL308PEH6327XTSA1 DISTI # V72:2272_06391975	Infineon Technologies AG	Trans MOSFET P-CH 30V 2A Automotive 6-Pin TSOP T/R RoHS: Compliant	149	100:$0.3227 25:$0.4726 10:$0.5776 1:$0.6909
BSL308PEH6327XTSA1 DISTI # V36:1790_06391975	Infineon Technologies AG	Trans MOSFET P-CH 30V 2A Automotive 6-Pin TSOP T/R RoHS: Compliant	0	3000000:$0.1718 1500000:$0.1720 300000:$0.1884 30000:$0.2155 3000:$0.2200
BSL308PEH6327XTSA1 DISTI # BSL308PEH6327XTSA1TR-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2A 6TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	30000:$0.1982 15000:$0.2091 6000:$0.2246 3000:$0.2401
BSL308PEH6327XTSA1 DISTI # BSL308PEH6327XTSA1CT-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2A 6TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2552 500:$0.3191 100:$0.4036 10:$0.5260 1:$0.6000
BSL308PEH6327XTSA1 DISTI # BSL308PEH6327XTSA1DKR-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2A 6TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2552 500:$0.3191 100:$0.4036 10:$0.5260 1:$0.6000
BSL308PEH6327XTSA1 DISTI # 32914040	Infineon Technologies AG	Trans MOSFET P-CH 30V 2A Automotive 6-Pin TSOP T/R RoHS: Compliant	149	38:$0.6909
BSL308PEH6327XTSA1 DISTI # BSL308PEH6327XTSA1	Infineon Technologies AG	Trans MOSFET P-CH 30V 2A 6-Pin TSOP T/R - Tape and Reel (Alt: BSL308PEH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1489 18000:$0.1519 12000:$0.1569 6000:$0.1629 3000:$0.1699
BSL308PEH6327XTSA1 DISTI # SP001101004	Infineon Technologies AG	Trans MOSFET P-CH 30V 2A 6-Pin TSOP T/R (Alt: SP001101004) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1519 18000:€0.1639 12000:€0.1819 6000:€0.2039 3000:€0.2409
BSL308PEH6327XTSA1 DISTI # 13AC8345	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL P-CH, TSOP-6,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-2A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,RoHS Compliant: Yes	5995	1000:$0.2540 500:$0.2780 250:$0.3030 100:$0.3280 50:$0.3980 25:$0.4680 10:$0.5380 1:$0.6460
BSL308PEH6327XTSA1 DISTI # 726-BSL308PEH6327XTS	Infineon Technologies AG	MOSFET SMALL SIGNAL+P-CH RoHS: Compliant	678	1:$0.6400 10:$0.5330 100:$0.3250 1000:$0.2510 3000:$0.2140 9000:$0.2000 24000:$0.1890
BSL308PEH6327XTSA1 DISTI # 8922172P	Infineon Technologies AG	MOSFET P-CHANNEL 30V 2A TSOP6, RL	2760	800:£0.1480 400:£0.1500 200:£0.1520 80:£0.1640
BSL308PEH6327XTSA1 DISTI # 2725818	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL P-CH, TSOP-6 RoHS: Compliant	5995	100:$0.6890 10:$0.8930 1:$1.0200
BSL308PEH6327XTSA1 DISTI # 2725818	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL P-CH, TSOP-6	5995	500:£0.1950 250:£0.2240 100:£0.2530 25:£0.4350 5:£0.4680

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BSL308PEH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes