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IPW60R037P7XKSA1

IPW60R037P7XKSA1
Mfr. #:
IPW60R037P7XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPW60R037P7XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPW60R037P7XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
76 A
Rds On - Drain-Source Resistance:
30 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
121 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
255 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Series:
CoolMOS P7
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
21 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
90 ns
Typical Turn-On Delay Time:
22 ns
Part # Aliases:
IPW60R037P7 SP001606060
Unit Weight:
0.211644 oz
Tags
IPW60R037, IPW60R03, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600V 37 mOhm 121 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 76A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Part # Mfg. Description Stock Price
IPW60R037P7XKSA1
DISTI # V99:2348_17076896		Infineon Technologies AGTrans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube120
  • 500:$8.0010
  • 250:$8.3400
  • 100:$8.8160
  • 50:$10.0540
  • 25:$10.5130
  • 10:$11.0740
  • 1:$12.2320
IPW60R037P7XKSA1
DISTI # IPW60R037P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 76A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		265In Stock
  • 720:$7.0183
  • 240:$8.0597
  • 25:$9.2824
  • 10:$9.7350
  • 1:$10.7800
IPW60R037P7XKSA1
DISTI # 33368677		Infineon Technologies AGTrans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube240
  • 2:$5.4011
IPW60R037P7XKSA1
DISTI # 32004980		Infineon Technologies AGTrans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube120
  • 2:$12.2320
IPW60R037P7XKSA1
DISTI # SP001606060		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001606060)
RoHS: Compliant
Min Qty: 1		Europe - 240
  • 1000:€4.6900
  • 500:€5.0900
  • 100:€5.2900
  • 50:€5.4900
  • 25:€5.6900
  • 10:€5.8900
  • 1:€6.4900
IPW60R037P7XKSA1
DISTI # IPW60R037P7XKSA1		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPW60R037P7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$5.3900
  • 1440:$5.4900
  • 960:$5.6900
  • 480:$5.8900
  • 240:$6.1900
IPW60R037P7XKSA1
DISTI # IPW60R037P7		Infineon Technologies AGHIGH POWER_NEW (Alt: IPW60R037P7)
RoHS: Compliant
Min Qty: 240		Asia - 0
    IPW60R037P7XKSA1
    DISTI # 45AC7169    		Infineon Technologies AGMOSFET, N-CH, 600V, 76A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:76A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes914
    • 500:$6.7500
    • 250:$7.4000
    • 100:$7.7500
    • 50:$8.3400
    • 25:$8.9300
    • 10:$9.3600
    • 1:$10.3500
    IPW60R037P7XKSA1
    DISTI # 726-IPW60R037P7XKSA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		4702
    • 1:$10.2500
    • 10:$9.2700
    • 25:$8.8400
    • 100:$7.6700
    • 250:$7.3300
    • 500:$6.6800
    • 1000:$5.8200
    IPW60R037P7XKSA1
    DISTI # IPW60R037P7    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,48A,255W,PG-TO247-3236
    • 30:$7.3500
    • 10:$8.1800
    • 3:$9.2600
    • 1:$10.2900
    IPW60R037P7XKSA1
    DISTI # 2803403    		Infineon Technologies AGMOSFET, N-CH, 600V, 76A, TO-247-31583
    • 100:£5.9700
    • 50:£6.4200
    • 10:£6.8700
    • 5:£7.9800
    • 1:£8.5500
    IPW60R037P7XKSA1
    DISTI # 2803403    		Infineon Technologies AGMOSFET, N-CH, 600V, 76A, TO-247-3
    RoHS: Compliant    		874
    • 250:$8.6400
    • 100:$8.9000
    • 50:$9.3900
    • 10:$9.9200
    • 5:$11.2200
    • 1:$12.0000
    IPW60R037P7XKSA1
    DISTI # XSKDRABV0049857    		Infineon Technologies AG 
    RoHS: Compliant    		450 in Stock0 on Order
    • 450:$7.5600
    • 240:$8.1000
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    IPZA60R037P7XKSA1

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    OMO.#: OMO-CRCW1206100RJNEAC

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    Mfr.#: AS0805KKX7R9BB104

    OMO.#: OMO-AS0805KKX7R9BB104

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1uF 10% 50V AEC-Q200
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    Mfr.#: C1210X474KARACAUTO

    OMO.#: OMO-C1210X474KARACAUTO

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    OMO.#: OMO-1853890

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    Mfr.#: CRCW12064K70FKEBC

    OMO.#: OMO-CRCW12064K70FKEBC-VISHAY-DALE

    		 RES 4.7K OHM 1% 1/4W 1206
    CRCW1206100RJNEAC

    Mfr.#: CRCW1206100RJNEAC

    OMO.#: OMO-CRCW1206100RJNEAC-VISHAY-DALE

    		 D25/CRCW1206-C 200 100R 5% ET1
    C0805C103K1HACAUTO

    Mfr.#: C0805C103K1HACAUTO

    OMO.#: OMO-C0805C103K1HACAUTO-1190

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 0.01uF X8R 0805 10% AEC-Q200
    C0402S102K5RAC7867

    Mfr.#: C0402S102K5RAC7867

    OMO.#: OMO-C0402S102K5RAC7867-KEMET

    		 CAP CER 1000PF 50V X7R 0402
    Availability
    Stock:
    Available
    On Order:
    1987
    Enter Quantity:
    Current price of IPW60R037P7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $10.25
    $10.25
    10
    $9.27
    $92.70
    25
    $8.84
    $221.00
    100
    $7.67
    $767.00
    250
    $7.33
    $1 832.50
    500
    $6.68
    $3 340.00
    1000
    $5.82
    $5 820.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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