SI2308CDS-T1-GE3

SI2308CDS-T1-GE3
Mfr. #:
SI2308CDS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V Vds 20V Vgs SOT-23
Lifecycle:
New from this manufacturer.
Datasheet:
SI2308CDS-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2308CDS-T1-GE3 DatasheetSI2308CDS-T1-GE3 Datasheet (P4-P6)SI2308CDS-T1-GE3 Datasheet (P7)
ECAD Model:
More Information:
SI2308CDS-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
2.6 A
Rds On - Drain-Source Resistance:
200 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
2 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.6 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
Si2308CDS
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
3.2 S
Fall Time:
16 ns
Product Type:
MOSFET
Rise Time:
25 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
10 ns
Typical Turn-On Delay Time:
23 ns
Tags
SI2308, SI230, SI23, SI2
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R
***ical
Trans MOSFET N-CH 60V 2.6A 3-Pin SOT-23 T/R
***i-Key
MOSFET N-CH 60V 2.6A SOT23-3
***ark
Mosfet, N-Ch, 60V, 2.6A, 150Deg C, 1.6W; Transistor Polarity:n Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.12Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.6W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 60V, 2.6A, 150°C, 1.6W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2.6A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.12ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:1.6W; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SI2308CDS-T1-GE3
DISTI # V72:2272_21388861
Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET3582
  • 75000:$0.0859
  • 30000:$0.0875
  • 15000:$0.0889
  • 6000:$0.0903
  • 3000:$0.0919
  • 1000:$0.1067
  • 500:$0.1377
  • 250:$0.1625
  • 100:$0.1805
  • 50:$0.2170
  • 25:$0.2652
  • 10:$0.2946
  • 1:$0.4389
SI2308CDS-T1-GE3
DISTI # V99:2348_21388861
Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET0
    SI2308CDS-T1-GE3
    DISTI # V36:1790_21388861
    Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET0
      SI2308CDS-T1-GE3
      DISTI # SI2308CDS-T1-GE3CT-ND
      Vishay SiliconixMOSFET N-CH 60V 2.6A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      2440In Stock
      • 1000:$0.1236
      • 500:$0.1648
      • 100:$0.2198
      • 10:$0.3230
      • 1:$0.4000
      SI2308CDS-T1-GE3
      DISTI # SI2308CDS-T1-GE3DKR-ND
      Vishay SiliconixMOSFET N-CH 60V 2.6A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      2440In Stock
      • 1000:$0.1236
      • 500:$0.1648
      • 100:$0.2198
      • 10:$0.3230
      • 1:$0.4000
      SI2308CDS-T1-GE3
      DISTI # SI2308CDS-T1-GE3TR-ND
      Vishay SiliconixMOSFET N-CH 60V 2.6A SOT23-3
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 30000:$0.0889
      • 15000:$0.0967
      • 6000:$0.1033
      • 3000:$0.1100
      SI2308CDS-T1-GE3
      DISTI # 30287441
      Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET3582
      • 75000:$0.0923
      • 30000:$0.0941
      • 15000:$0.0956
      • 6000:$0.0971
      • 3000:$0.0988
      • 1000:$0.1147
      • 500:$0.1480
      • 250:$0.1747
      • 100:$0.1940
      • 71:$0.2333
      SI2308CDS-T1-GE3
      DISTI # SI2308CDS-T1-GE3
      Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R (Alt: SI2308CDS-T1-GE3)
      RoHS: Compliant
      Min Qty: 6000
      Container: Tape and Reel
      Asia - 0
        SI2308CDS-T1-GE3
        DISTI # SI2308CDS-T1-GE3
        Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2308CDS-T1-GE3)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel
        Americas - 0
        • 30000:$0.0809
        • 15000:$0.0829
        • 9000:$0.0859
        • 6000:$0.0889
        • 3000:$0.0919
        SI2308CDS-T1-GE3
        DISTI # SI2308CDS-T1-GE3
        Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R (Alt: SI2308CDS-T1-GE3)
        RoHS: Compliant
        Min Qty: 1
        Container: Tape and Reel
        Europe - 0
        • 1000:€0.0869
        • 500:€0.0879
        • 100:€0.0899
        • 50:€0.0929
        • 25:€0.1009
        • 10:€0.1169
        • 1:€0.1719
        SI2308CDS-T1-GE3
        DISTI # 59AC7474
        Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
        • 50000:$0.0820
        • 30000:$0.0910
        • 20000:$0.0980
        • 10000:$0.1100
        • 5000:$0.1260
        • 1:$0.1340
        SI2308CDS-T1-GE3
        DISTI # 78AC6535
        Vishay IntertechnologiesMOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W,Transistor Polarity:N Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2232
        • 1000:$0.1160
        • 500:$0.1550
        • 250:$0.1730
        • 100:$0.1920
        • 50:$0.2230
        • 25:$0.2540
        • 10:$0.2850
        • 1:$0.4240
        SI2308CDS-T1-GE3
        DISTI # 78-SI2308CDS-T1-GE3
        Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SOT-23
        RoHS: Compliant
        74377
        • 1:$0.4200
        • 10:$0.2820
        • 100:$0.1900
        • 500:$0.1530
        • 1000:$0.1150
        • 3000:$0.1050
        • 6000:$0.0990
        • 9000:$0.0930
        SI2308CDS-T1-GE3
        DISTI # 2932884
        Vishay IntertechnologiesMOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W
        RoHS: Compliant
        2232
        • 1000:$0.2080
        • 500:$0.2260
        • 250:$0.2830
        • 100:$0.3600
        • 25:$0.4950
        • 5:$0.6090
        SI2308CDS-T1-GE3
        DISTI # 2932884
        Vishay IntertechnologiesMOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W2232
        • 500:£0.1210
        • 250:£0.1500
        • 100:£0.1520
        • 25:£0.2440
        • 5:£0.2540
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        Availability
        Stock:
        74
        On Order:
        2057
        Enter Quantity:
        Current price of SI2308CDS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $0.41
        $0.41
        10
        $0.28
        $2.81
        100
        $0.19
        $18.90
        500
        $0.15
        $76.00
        1000
        $0.11
        $114.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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