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IPG20N10S4L35AATMA1

IPG20N10S4L35AATMA1
Mfr. #:
IPG20N10S4L35AATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_100+
Lifecycle:
New from this manufacturer.
Datasheet:
IPG20N10S4L35AATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPG20N10S4L35AATMA1 DatasheetIPG20N10S4L35AATMA1 Datasheet (P4-P6)IPG20N10S4L35AATMA1 Datasheet (P7-P9)
ECAD Model:
More Information:
IPG20N10S4L35AATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
20 A
Rds On - Drain-Source Resistance:
45 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
17.4 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
43 W
Configuration:
Dual
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
2 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Fall Time:
13 ns
Product Type:
MOSFET
Rise Time:
2 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
18 ns
Typical Turn-On Delay Time:
3 ns
Part # Aliases:
IPG20N10S4L-35A SP001091928
Tags
IPG20N10S4L, IPG20N1, IPG20, IPG2, IPG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
100V, Dual N-Ch, 35 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2, PG-TDSON-8, RoHS
***et Europe
Transistor MOSFET Array Dual N-CH 100V 20A 8-Pin TDSON T/R
***ical
Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
***ineon
Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Feasible for automatic optical inspection (AOI)
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Inductive Wireless Charging – In-Car Charging
Infineon Technologies Inductive Wireless Charging – In-Car Charging allows for placing devices in a designated area to charge without a wired connection. Automotive inductive wireless charging is growing in the latest generation of cars. In fact, it’s predicted that most cars will have the feature in the very near future.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Part # Mfg. Description Stock Price
IPG20N10S4L35AATMA1
DISTI # 33592292		Infineon Technologies AGTrans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R120000
  • 5000:$0.4277
IPG20N10S4L35AATMA1
DISTI # IPG20N10S4L35AATMA1-ND		Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.4890
IPG20N10S4L35AATMA1
DISTI # IPG20N10S4L35AATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 20A 8-Pin TDSON T/R - Tape and Reel (Alt: IPG20N10S4L35AATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.4439
  • 30000:$0.4529
  • 20000:$0.4679
  • 10000:$0.4859
  • 5000:$0.5039
IPG20N10S4L35AATMA1
DISTI # SP001091928		Infineon Technologies AGTrans MOSFET N-CH 100V 20A 8-Pin TDSON T/R (Alt: SP001091928)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.4059
  • 30000:€0.4369
  • 20000:€0.4729
  • 10000:€0.5159
  • 5000:€0.6309
IPG20N10S4L35AATMA1
DISTI # 726-20N10S4L35AATMA1		Infineon Technologies AGMOSFET N-CHANNEL_100+
RoHS: Compliant		4584
  • 1:$1.1400
  • 10:$0.9810
  • 100:$0.7530
  • 500:$0.6660
  • 1000:$0.5260
  • 5000:$0.4660
  • 10000:$0.4490
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Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of IPG20N10S4L35AATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.14
$1.14
10
$0.98
$9.81
100
$0.75
$75.30
500
$0.67
$333.00
1000
$0.53
$526.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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