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FGB5N60UNDF

FGB5N60UNDF
Mfr. #:
FGB5N60UNDF
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors 600V 5A NPT IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
FGB5N60UNDF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FGB5N60UNDF more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-263AB-3
Mounting Style:
SMD/SMT
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
2.4 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
10 A
Pd - Power Dissipation:
73.5 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
FGB5N60UNDF
Packaging:
Reel
Brand:
ON Semiconductor / Fairchild
Gate-Emitter Leakage Current:
+/- 10 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
800
Subcategory:
IGBTs
Unit Weight:
0.046296 oz
Tags
FGB5, FGB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop & Short Circuit Rated IGBTs
ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).
Part # Mfg. Description Stock Price
FGB5N60UNDF
DISTI # 26733835		ON Semiconductor600V 5A NPT IGBT2400
  • 9600:$0.7729
  • 4800:$0.7841
  • 2400:$0.8148
  • 800:$0.8742
FGB5N60UNDF
DISTI # FGB5N60UNDF-ND		ON SemiconductorIGBT 600V 10A 73.5W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.1190
FGB5N60UNDF
DISTI # V36:1790_06338232		ON Semiconductor600V 5A NPT IGBT0
    FGB5N60UNDF
    DISTI # FGB5N60UNDF    		ON SemiconductorTrans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail (Alt: FGB5N60UNDF)
    RoHS: Compliant
    Min Qty: 800    		Europe - 0
    • 8000:€0.7199
    • 4800:€0.7709
    • 3200:€0.8309
    • 1600:€0.8999
    • 800:€1.0799
    FGB5N60UNDF
    DISTI # FGB5N60UNDF    		ON SemiconductorTrans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Bulk (Alt: FGB5N60UNDF)
    Min Qty: 368
    Container: Bulk    		Americas - 0
    • 3680:$0.8389
    • 1840:$0.8599
    • 1104:$0.8709
    • 736:$0.8829
    • 368:$0.8879
    FGB5N60UNDF
    DISTI # FGB5N60UNDF    		ON SemiconductorTrans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Tape and Reel (Alt: FGB5N60UNDF)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Americas - 0
    • 8000:$0.7509
    • 4800:$0.7699
    • 3200:$0.7799
    • 1600:$0.7899
    • 800:$0.7959
    FGB5N60UNDF
    DISTI # 57AC1890    		ON SemiconductorIGBT, SINGLE, 600V, 10A, TO-263AB,DC Collector Current:10A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:73.5W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-263AB,No. of Pins:3Pins,RoHS Compliant: Yes775
    • 1000:$1.1100
    • 500:$1.1700
    • 250:$1.2600
    • 100:$1.4500
    • 50:$1.6400
    • 25:$1.8100
    • 10:$1.9900
    • 1:$2.2500
    FGB5N60UNDF
    DISTI # 95T0027    		ON SemiconductorNPTPIGBT TO263 5A 600V / REEL0
    • 9600:$0.8230
    • 2400:$0.8470
    • 800:$0.9260
    • 1:$0.9320
    FGB5N60UNDF
    DISTI # 512-FGB5N60UNDF    		ON SemiconductorIGBT Transistors 600V 5A NPT IGBT
    RoHS: Compliant    		2160
    • 1:$1.7900
    • 10:$1.5200
    • 100:$1.2100
    • 500:$1.0600
    • 800:$0.8830
    • 2400:$0.8230
    • 4800:$0.7920
    • 9600:$0.7620
    FGB5N60UNDFON SemiconductorInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    RoHS: Compliant    		1600
    • 1000:$0.9000
    • 500:$0.9400
    • 100:$0.9800
    • 25:$1.0200
    • 1:$1.1000
    FGB5N60UNDFFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB
    RoHS: Compliant    		73530
    • 1000:$0.9000
    • 500:$0.9400
    • 100:$0.9800
    • 25:$1.0200
    • 1:$1.1000
    FGB5N60UNDFFairchild Semiconductor Corporation 1250
      FGB5N60UNDF
      DISTI # 2860234      		ON SemiconductorIGBT, SINGLE, 600V, 10A, TO-263AB
      RoHS: Compliant      		775
      • 1600:$1.3500
      • 800:$1.6300
      • 100:$1.9900
      • 10:$2.4700
      • 1:$2.7500
      FGB5N60UNDF
      DISTI # 2860234      		ON SemiconductorIGBT, SINGLE, 600V, 10A, TO-263AB
      RoHS: Compliant      		800
      • 500:£0.6870
      • 250:£0.8160
      • 100:£0.9450
      • 25:£1.1800
      • 5:£1.3000
      FGB5N60UNDFFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant      		Europe - 800
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        Availability
        Stock:
        Available
        On Order:
        1985
        Enter Quantity:
        Current price of FGB5N60UNDF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.79
        $1.79
        10
        $1.52
        $15.20
        100
        $1.21
        $121.00
        500
        $1.06
        $530.00
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