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TGF2957

TGF2957
Mfr. #:
TGF2957
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2957 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2957 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
18.2 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
32 V
Id - Continuous Drain Current:
820 mA
Output Power:
41.6 dBm
Maximum Drain Gate Voltage:
100 V
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
17 W
Mounting Style:
SMD/SMT
Package / Case:
Die
Packaging:
Gel Pack
Configuration:
Single
Operating Frequency:
15 GHz
Operating Temperature Range:
- 65 C to + 150 C
Brand:
Qorvo
Product Type:
RF JFET Transistors
Factory Pack Quantity:
50
Subcategory:
Transistors
Part # Aliases:
1112257
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 12 GHz, 70 W, 19.2 dB, 32 V, GaN, DIE
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
1112250
DISTI # TGF2957		QorvoRF POWER TRANSISTOR
RoHS: Compliant		0
  • 1:$9.5500
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 D8 - CONNECTOR, ACCESS
Availability
Stock:
50
On Order:
2033
Enter Quantity:
Current price of TGF2957 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
50
$82.32
$4 116.00
100
$72.74
$7 274.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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