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BSC123N10LSGATMA1

BSC123N10LSGATMA1
Mfr. #:
BSC123N10LSGATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
Lifecycle:
New from this manufacturer.
Datasheet:
BSC123N10LSGATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
71 A
Rds On - Drain-Source Resistance:
10 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
68 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
114 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 2
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
49 S
Fall Time:
7 ns
Product Type:
MOSFET
Rise Time:
25 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
41 ns
Typical Turn-On Delay Time:
18 ns
Part # Aliases:
BSC123N10LS BSC123N1LSGXT G SP000379612
Unit Weight:
0.005855 oz
Tags
BSC123N10LSG, BSC123N1, BSC123, BSC12, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 12.3 mOhm 51 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 71A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.85V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:114W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Part # Mfg. Description Stock Price
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6856In Stock
  • 1000:$0.9241
  • 500:$1.1153
  • 100:$1.4340
  • 10:$1.7840
  • 1:$1.9800
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6856In Stock
  • 1000:$0.9241
  • 500:$1.1153
  • 100:$1.4340
  • 10:$1.7840
  • 1:$1.9800
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.8044
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 10.6A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC123N10LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6479
  • 10000:$0.6249
  • 20000:$0.6019
  • 30000:$0.5819
  • 50000:$0.5709
BSC123N10LSGATMA1
DISTI # SP000379612		Infineon Technologies AGTrans MOSFET N-CH 100V 10.6A 8-Pin TDSON T/R (Alt: SP000379612)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.8859
  • 10000:€0.7249
  • 20000:€0.6649
  • 30000:€0.6139
  • 50000:€0.5699
BSC123N10LSGATMA1
DISTI # 52R3478		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 7A, PG-TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:71A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.85V RoHS Compliant: Yes0
  • 1000:$0.8160
  • 500:$0.9850
  • 100:$1.1200
  • 10:$1.4000
  • 1:$1.6500
BSC123N10LSGATMA1
DISTI # 726-BSC123N10LSGATMA		Infineon Technologies AGMOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
RoHS: Compliant		4999
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9850
  • 1000:$0.8160
BSC123N10LS G
DISTI # 726-BSC123N10LSG		Infineon Technologies AGMOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
RoHS: Compliant		2313
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9850
  • 1000:$0.8160
BSC123N10LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		550
  • 1000:$0.5800
  • 500:$0.6100
  • 100:$0.6300
  • 25:$0.6600
  • 1:$0.7100
BSC123N10LSGATMA1
DISTI # 7545305P		Infineon Technologies AGMOSFET N-CH 100V 10.6A OPTIMOS2 TDSON8, RL2462
  • 300:£1.0650
  • 100:£1.1050
  • 40:£1.1500
  • 20:£1.2050
BSC123N10LSGATMA1
DISTI # 1775470		Infineon Technologies AGMOSFET, N CH, 71A, 100V, PG-TDSON-8
RoHS: Compliant		5306
  • 500:£0.7660
  • 250:£0.8230
  • 100:£0.8790
  • 25:£1.0900
  • 5:£1.1900
BSC123N10LSGATMA1
DISTI # 1775470		Infineon Technologies AGMOSFET, N CH, 71A, 100V, PG-TDSON-8
RoHS: Compliant		3746
  • 5000:$1.2800
  • 1000:$1.3000
  • 500:$1.5600
  • 100:$1.7900
  • 10:$2.2300
  • 1:$2.6300
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of BSC123N10LSGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.65
$1.65
10
$1.40
$14.00
100
$1.12
$112.00
500
$0.98
$492.50
1000
$0.82
$816.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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