2SC6096-TD-E

Mfr. #:: 2SC6096-TD-E
Manufacturer:: ON Semiconductor
Description:: Bipolar Transistors - BJT BIP NPN 2A 100V
Lifecycle:: New from this manufacturer.
Datasheet:: 2SC6096-TD-E Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: SMD/SMT

Package / Case:: PCP-3

Transistor Polarity:: NPN

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 100 V

Collector- Base Voltage VCBO:: 120 V

Emitter- Base Voltage VEBO:: 6.5 V

Collector-Emitter Saturation Voltage:: 100 mV

Maximum DC Collector Current:: 3 A

Gain Bandwidth Product fT:: 300 MHz

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: 2SC6096

DC Current Gain hFE Max:: 600 at 100 mA, 5 V

Packaging:: Reel

Brand:: ON Semiconductor

DC Collector/Base Gain hfe Min:: 300 at 100 mA, 5 V

Pd - Power Dissipation:: 3.5 W

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 1000

Subcategory:: Transistors

Unit Weight:: 0.001817 oz

Tags: 2SC6096, 2SC609, 2SC60, 2SC6, 2SC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SC6096-TD-E Description

***emi: Bipolar Transistor, 100V, 2A, Low VCE(sat), NPN Single PCP

***ure Electronics: 2SC Series NPN 1.3 W 100 V 2 A Surface Mount Switching Transistor - SOT-89

***ark: Bipolar Transistor, NPN, 100 V, 2.0 A / REEL RoHS Compliant: Yes

***r Electronics: Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA, Plastic/Epoxy, 3 Pin

***Yang: Trans GP BJT NPN 100V 2A 4-Pin(3+Tab) PCP T/R - Tape and Reel

***ment14 APAC: Transistor, NPN, 100V, 2A, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:300MHz; Power

***nell: TRANSISTOR, NPN, 100V, 2A, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 3.5W; DC Collector Current: 2A; DC Current Gain hFE: 300hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***emi: Bipolar Transistor, 80V, 2.5A, Low VCE(sat), NPN Single PCP

***Yang: Trans GP BJT NPN 80V 2.5A 4-Pin(3+Tab) PCP T/R - Tape and Reel

***(Formerly Allied Electronics): ON Semi 2SC6095-TD-E NPN Bipolar Transistor, 2.5 A, 80 V, 3-Pin PCP | ON Semiconductor 2SC6095-TD-E

***r Electronics: Power Bipolar Transistor, 2.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA, Plastic/Epoxy, 3 Pin

***emi: Bipolar Transistor, 100V, 2A, Low VCE(sat), NPN Single TP/TP-FA

***(Formerly Allied Electronics): ON Semi 2SC6099-TL-E NPN Bipolar Transistor, 2 A, 100 V, 4-Pin TP-FA | ON Semiconductor 2SC6099-TL-E

***Yang: Trans GP BJT NPN 100V 2A 3-Pin(2+Tab) TP-FA T/R - Tape and Reel

***ark: Bip Transister 100V 2A VCE(sat);165mV max. NPN Single TP/TP-FA / REEL RoHS Compliant: Yes

***nell: TRANSISTOR, NPN, 100V, 2A, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 15W; DC Collector Current: 2A; DC Current Gain hFE: 300hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***-Wing Technology: Bulk Through Hole NPN 3 Bipolar (BJT) Transistor 300 @ 100mA 5V 1muA ICBO 800mW 300MHz

***emi: Bipolar Transistor, 100V, 2A, Low VCE(sat), NPN Single TP/TP-FA

***ical: Trans GP BJT NPN 100V 2A 800mW 3-Pin(3+Tab) TP Bag

***ure Electronics: ZTX653 Series NPN 2 A 100 V Silicon Planar Medium Power Transistor - TO-92-3

*** Source Electronics: Trans GP BJT NPN 100V 2A 1000mW 3-Pin E-Line / TRANS NPN 100V 2A E-LINE

***fin: Transistor NPN ZTX653 ZETEX Ampere=2 V=100 TO92

***(Formerly Allied Electronics): NPN transistor,ZTX653 2A Ic 2Vce | Diodes Inc ZTX653

***ment14 APAC: Transistor, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:175MHz; Power Dissipation Pd:1W;

***ark: Bipolar Transistor, Npn, 100V; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:175Mhz Rohs Compliant: Yes |Diodes Inc. ZTX653

***nell: TRANSISTOR, NPN E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 1W; DC Collector Current: 2A; DC Current Gain hFE: -; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 2A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Device Marking: ZTX653; Gain Bandwidth ft Min: 140MHz; Gain Bandwidth ft Typ: 175MHz; Hfe Min: 100; No. of Transistors: 1; Pin Configuration: e; Power Dissipation Ptot Max: 1W; Transistor Type: Power Bipolar; Voltage Vcbo: 120V

***ure Electronics: 2SD1980 Series 100 V 2 A Surface Mount NPN Power Transistor - SC-63

***ical: Trans Darlington NPN 100V 2A 1000mW 3-Pin(2+Tab) CPT T/R

***(Formerly Allied Electronics): ROHM 2SD1980TL NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin SC-63 | ROHM Semiconductor 2SD1980TL

***nell: DUAL TRANSISTOR, 100V, SC-63; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 80MHz; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 1000hFE; Transistor Case Style: SOT-428; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 1.5V; Current Ic Continuous a Max: 1A; Gain Bandwidth ft Typ: 80MHz; Hfe Min: 1000; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power

***SIT Distribution GmbH: Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

***ure Electronics: FZT653 Series NPN 2 A 100 V SMT Silicon High Performance Transistor - SOT-223

***ical: Trans GP BJT NPN 100V 2A 2000mW 4-Pin(3+Tab) SOT-223 T/R

***(Formerly Allied Electronics): SMT NPN transistor,FZT653 2A Ic 2Vce | Diodes Inc FZT653TA

***ronik: NPN TRANSISTOR 100V 2A 2WSOT223

***ment14 APAC: Transistor, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:175MHz; Power Dissipation Pd:2W;

***ark: Bipolar Transistor, Npn, 100V; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:175Mhz Rohs Compliant: Yes |Diodes Inc. FZT653TA

***nell: TRANSISTOR, NPN, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 300mV; Continuous Collector Current Ic Max: 2A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 140MHz; Gain Bandwidth ft Typ: 175MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 2W; Pulsed Current Icm: 6A; SMD Marking: FZT653; Voltage Vcbo: 120V

Market price

Part #	Mfg.	Description	Stock	Price
2SC6096-TD-E DISTI # V36:1790_07284291	ON Semiconductor	Trans GP BJT NPN 100V 2A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant	0
2SC6096-TD-E DISTI # 2SC6096-TD-EOSCT-ND	ON Semiconductor	TRANS NPN 100V 2A SOT89-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3037In Stock	500:$0.3461 100:$0.4378 10:$0.5710 1:$0.6500
2SC6096-TD-E DISTI # 2SC6096-TD-EOSDKR-ND	ON Semiconductor	TRANS NPN 100V 2A SOT89-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3037In Stock	500:$0.3461 100:$0.4378 10:$0.5710 1:$0.6500
2SC6096-TD-E DISTI # 2SC6096-TD-EOSTR-ND	ON Semiconductor	TRANS NPN 100V 2A SOT89-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	10000:$0.2240 5000:$0.2268 2000:$0.2436 1000:$0.2688
2SC6096-TD-E DISTI # 2SC6096-TD-E	ON Semiconductor	Trans GP BJT NPN 100V 2A 4-Pin(3+Tab) PCP T/R (Alt: 2SC6096-TD-E) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€0.2219 6000:€0.2339 4000:€0.2419 2000:€0.2729 1000:€0.3149
2SC6096-TD-E DISTI # 2SC6096-TD-E	ON Semiconductor	Trans GP BJT NPN 100V 2A 4-Pin(3+Tab) PCP T/R - Bulk (Alt: 2SC6096-TD-E) Min Qty: 1389 Container: Bulk	Americas - 0	13890:$0.2219 6945:$0.2269 4167:$0.2299 2778:$0.2329 1389:$0.2349
2SC6096-TD-E DISTI # 2SC6096-TD-E	ON Semiconductor	Trans GP BJT NPN 100V 2A 4-Pin(3+Tab) PCP T/R - Tape and Reel (Alt: 2SC6096-TD-E) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1969 15000:$0.2019 9000:$0.2049 6000:$0.2069 3000:$0.2089
2SC6096-TD-E DISTI # 65T2506	ON Semiconductor	BIP NPN 2A 100V / REEL	0	9000:$0.2290 3000:$0.2450 1000:$0.2850 500:$0.3450 250:$0.3540 100:$0.3650 25:$0.5730 1:$0.7780
2SC6096-TD-E DISTI # 99AC6867	ON Semiconductor	TRANSISTOR, NPN, 100V, 2A, SOT-89,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:300MHz,Power Dissipation Pd:3.5W,DC Collector Current:2A,DC Current Gain hFE:300hFE,Transistor Case RoHS Compliant: Yes	663	100:$0.3230 50:$0.3820 25:$0.4420 10:$0.5010 1:$0.6060
2SC6096-TD-H DISTI # 863-2SC6096-TD-H	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 2A 100V RoHS: Compliant	9081	1:$0.6000 10:$0.5010 100:$0.3050 1000:$0.2360 2000:$0.2010 10000:$0.1880 25000:$0.1780
2SC6096-TD-E DISTI # 863-2SC6096-TD-E	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 2A 100V RoHS: Compliant	1640	1:$0.6000 10:$0.4960 100:$0.3200 1000:$0.2560
2SC6096-TD-E	SANYO Semiconductor Co Ltd	Power Bipolar Transistor RoHS: Compliant	855	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900
2SC6096-TD-E DISTI # 2774781	ON Semiconductor	TRANSISTOR, NPN, 100V, 2A, SOT-89 RoHS: Compliant	967	1000:$0.3590 500:$0.3880 250:$0.4730 100:$0.5770 10:$0.8450 1:$0.9850
2SC6096-TD-E DISTI # 2774781	ON Semiconductor	TRANSISTOR, NPN, 100V, 2A, SOT-89	663	500:£0.2090 250:£0.2300 100:£0.2510 25:£0.4110 5:£0.4410

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2SC6096-TD-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes