BFP 640ESD H6327

Mfr. #:: BFP 640ESD H6327
Manufacturer:: Infineon Technologies
Description:: RF Bipolar Transistors RF BIP TRANSISTORS
Lifecycle:: New from this manufacturer.
Datasheet:: BFP 640ESD H6327 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: BFP 640ESD H6327 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: RF Bipolar Transistors

RoHS:: Y

Series:: BFP640

Transistor Type:: Bipolar

Technology:: SiGe

Transistor Polarity:: NPN

DC Collector/Base Gain hfe Min:: 110

Collector- Emitter Voltage VCEO Max:: 4.1 V

Continuous Collector Current:: 50 mA

Configuration:: Single

Mounting Style:: SMD/SMT

Package / Case:: SOT-343

Packaging:: Reel

Operating Frequency:: 45 GHz

Type:: RF Silicon Germanium

Brand:: Infineon Technologies

Pd - Power Dissipation:: 200 mW

Product Type:: RF Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Part # Aliases:: BFP640ESDH6327XTSA1 BFP64ESDH6327XT SP000785482

Unit Weight:: 0.000244 oz

Tags: BFP640ESDH, BFP640ES, BFP640E, BFP64, BFP6, BFP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFP 640ESD H6327 More Information

RF Transistors: Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

Market price

Part #	Mfg.	Description	Stock	Price
BFP640ESDH6327XTSA1 DISTI # 32748676	Infineon Technologies AG	Trans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	6000	3000:$0.2203
BFP640ESDH6327XTSA1 DISTI # 32868515	Infineon Technologies AG	Trans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	3000	3000:$0.2293
BFP640ESDH6327XTSA1 DISTI # BFP640ESDH6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 46GHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1711In Stock	1000:$0.2297 500:$0.2973 100:$0.3784 10:$0.5070 1:$0.5900
BFP640ESDH6327XTSA1 DISTI # BFP640ESDH6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 46GHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1711In Stock	1000:$0.2297 500:$0.2973 100:$0.3784 10:$0.5070 1:$0.5900
BFP640ESDH6327XTSA1 DISTI # BFP640ESDH6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 46GHZ SOT343 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.1679 15000:$0.1771 6000:$0.1902 3000:$0.2034
BFP640ESDH6327XTSA1 DISTI # V36:1790_06384746	Infineon Technologies AG	Trans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	0
BFP640ESDH6327XTSA1 DISTI # V72:2272_06384746	Infineon Technologies AG	Trans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	0
BFP640ESDH6327 DISTI # BFP 640ESD H6327	Infineon Technologies AG	RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount SOT-343 (Alt: BFP 640ESD H6327) RoHS: Compliant Min Qty: 3000	Asia - 0	150000:$0.1661 75000:$0.1682 30000:$0.1704 15000:$0.1726 9000:$0.1773 6000:$0.1822 3000:$0.1874
BFP640ESDH6327XTSA1 DISTI # BFP640ESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 4.1V 0.05A 4-Pin(3+Tab) SOT-343 T/R - Bulk (Alt: BFP640ESDH6327XTSA1) Min Qty: 1924 Container: Bulk	Americas - 0	19240:$0.1649 9620:$0.1679 5772:$0.1739 3848:$0.1799 1924:$0.1869
BFP640ESDH6327XTSA1 DISTI # BFP640ESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 4.1V 0.05A 4-Pin(3+Tab) SOT-343 T/R - Tape and Reel (Alt: BFP640ESDH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1659 18000:$0.1689 12000:$0.1749 6000:$0.1819 3000:$0.1889
BFP640ESDH6327XTSA1 DISTI # SP000785482	Infineon Technologies AG	Trans GP BJT NPN 4.1V 0.05A 4-Pin(3+Tab) SOT-343 T/R (Alt: SP000785482) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1729 18000:€0.1869 12000:€0.2019 6000:€0.2209 3000:€0.2699
BFP640ESDH6327XTSA1 DISTI # 01AC4780	Infineon Technologies AG	RF BIP TRANSISTORS,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:4.7V,Transition Frequency ft:45GHz,Power Dissipation Pd:160mW,DC Collector Current:45mA,DC Current Gain hFE:250hFE,RF Transistor Case:TSFP,No. of RoHS Compliant: Yes	0	1000:$0.2260 500:$0.2480 250:$0.2700 100:$0.2920 50:$0.3540 25:$0.4160 10:$0.4790 1:$0.5760
BFP640ESDH6327XTSA1	Infineon Technologies AG	BFP640ESD Series 4.7 V Robust Low Noise Silicon Germanium Bipolar RF Transistor RoHS: Compliant	6000Reel	3000:$0.1640
BFP 640ESD H6327 DISTI # 726-BFP640ESDH6327XT	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	3667	1:$0.5700 10:$0.4740 100:$0.2890 1000:$0.2240 3000:$0.1910
BFP640ESDH6327XTSA1 DISTI # 726-BFP640ESDH6327	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	5445	1:$0.5700 10:$0.4740 100:$0.2890 1000:$0.2240 3000:$0.1910
BFP640ESDH6327XTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN RoHS: Compliant	345	1000:$0.1700 500:$0.1800 100:$0.1900 25:$0.2000 1:$0.2100
BFP 640ESD H6327	Infineon Technologies AG		848
BFP640ESDH6327XTSA1 DISTI # 8275154P	Infineon Technologies AG	LOW NOISE SIGE RF TRANSISTOR NPN SOT343, RL	1400	1250:£0.2360 500:£0.2720 125:£0.3090
BFP640ESDH6327XTSA1 DISTI # 8275154	Infineon Technologies AG	LOW NOISE SIGE RF TRANSISTOR NPN SOT343, PK	250	1250:£0.2360 500:£0.2720 125:£0.3090 25:£0.3640
BFP640ESDH6327	Infineon Technologies AG		2520
BFP640ESDH6327XTSA1 DISTI # 2443521	Infineon Technologies AG	RF BIP TRANSISTORS RoHS: Compliant	1366	10:$0.7290 1:$0.8770
BFP640ESDH6327XTSA1 DISTI # 2443521	Infineon Technologies AG	RF BIP TRANSISTORS	1386	500:£0.2690 250:£0.2940 100:£0.3200 25:£0.3460 5:£0.4100
BFP640ESDH6327XTSA1 DISTI # XSFP00000114571	Infineon Technologies AG	RoHS: Compliant	6000 in Stock0 on Order	6000:$0.2982 3000:$0.3280
BFP640ESD H6327 DISTI # THF5293	Infineon Technologies AG	NPN RF-Trans 4,1V 50mASOT343 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.4322 6000:$0.4020 9000:$0.3825 15000:$0.3458 21000:$0.3177
BFP640ESDH6327	Infineon Technologies AG	4.1V,50mA,Bipolar RF NPN Transistor	2400	1:$0.3100 100:$0.2600 500:$0.2300 1000:$0.2200

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Availability

Stock:: Available
On Order:: 1986
Enter Quantity:

Current price of BFP 640ESD H6327 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.57~~; ~~$0.57~~

10: ~~$0.47~~; ~~$4.74~~

100: ~~$0.29~~; ~~$28.90~~

1000: ~~$0.22~~; ~~$224.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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BFP 640ESD H6327

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes