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BSC036NE7NS3 G

BSC036NE7NS3 G
Mfr. #:
BSC036NE7NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 75V 100A TDSON-8
Lifecycle:
New from this manufacturer.
Datasheet:
BSC036NE7NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
75 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
3.6 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.3 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
63.4 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
156 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
50 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
38 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
BSC036NE7NS3GATMA1 BSC36NE7NS3GXT SP000907920
Tags
BSC036, BSC03, BSC0, BSC
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSC036NE7NS3GATMA1
DISTI # BSC036NE7NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 75V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.5817
BSC036NE7NS3GATMA1
DISTI # BSC036NE7NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 75V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.7819
  • 500:$2.1129
  • 100:$2.6093
  • 10:$3.1820
  • 1:$3.5600
BSC036NE7NS3GATMA1
DISTI # BSC036NE7NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 75V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.7819
  • 500:$2.1129
  • 100:$2.6093
  • 10:$3.1820
  • 1:$3.5600
BSC036NE7NS3 G
DISTI # BSC036NE7NS3 G		Infineon Technologies AGTrans MOSFET N-CH 75V 20A 8-Pin TDSON T/R (Alt: BSC036NE7NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC036NE7NS3GXT
    DISTI # BSC036NE7NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 75V 20A 8-Pin TDSON - Tape and Reel (Alt: BSC036NE7NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$1.5900
    • 10000:$1.4900
    • 20000:$1.4900
    • 30000:$1.3900
    • 50000:$1.3900
    BSC036NE7NS3GATMA1
    DISTI # 50Y1801    		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 75 V, 0.0029 ohm, 10 V, 3.1 V RoHS Compliant: Yes4510
    • 1:$2.9800
    • 10:$2.5300
    • 25:$2.4200
    • 50:$2.3100
    • 100:$2.2000
    • 250:$2.0800
    • 500:$1.8700
    • 1000:$1.5800
    BSC036NE7NS3 G
    DISTI # 726-BSC036NE7NS3G    		Infineon Technologies AGMOSFET N-Ch 75V 100A TDSON-8
    RoHS: Compliant    		8280
    • 1:$2.9800
    • 10:$2.5300
    • 100:$2.2000
    • 250:$2.0800
    • 500:$1.8700
    • 1000:$1.5800
    • 2500:$1.5000
    • 5000:$1.4400
    BSC036NE7NS3GATMA1
    DISTI # 726-BSC036NE7NS3GATM    		Infineon Technologies AGMOSFET N-Ch 75V 100A TDSON-8
    RoHS: Compliant    		0
    • 1:$2.9800
    • 10:$2.5300
    • 100:$2.2000
    • 250:$2.0800
    • 500:$1.8700
    • 1000:$1.5800
    • 2500:$1.5000
    • 5000:$1.4400
    BSC036NE7NS3GInfineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 20A I(D), 75V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET312
    • 251:$3.5640
    • 59:$3.9960
    • 1:$6.4800
    BSC036NE7NS3 GInfineon Technologies AG 738
      BSC036NE7NS3GATMA1
      DISTI # 2480736RL      		Infineon Technologies AGMOSFET, N-CH, 75V, 100A, TDSON-8
      RoHS: Compliant      		0
      • 1:$4.7200
      • 10:$4.0100
      • 100:$3.4900
      • 250:$3.2900
      • 500:$2.9700
      • 1000:$2.5000
      • 2500:$2.3800
      • 5000:$2.2800
      BSC036NE7NS3GATMA1
      DISTI # 2480736      		Infineon Technologies AGMOSFET, N-CH, 75V, 100A, TDSON-8
      RoHS: Compliant      		4400
      • 1:$4.7200
      • 10:$4.0100
      • 100:$3.4900
      • 250:$3.2900
      • 500:$2.9700
      • 1000:$2.5000
      • 2500:$2.3800
      • 5000:$2.2800
      BSC036NE7NS3 GInfineon Technologies AGRoHS(ship within 1day)390
      • 1:$4.1200
      • 10:$3.3800
      • 50:$2.7200
      • 100:$2.3200
      • 500:$2.2100
      • 1000:$2.1600
      BSC036NE7NS3GATMA1
      DISTI # 2480736      		Infineon Technologies AGMOSFET, N-CH, 75V, 100A, TDSON-8
      RoHS: Compliant      		6318
      • 1:£3.2400
      • 10:£2.4400
      • 100:£2.1200
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      Availability
      Stock:
      13
      On Order:
      1996
      Enter Quantity:
      Current price of BSC036NE7NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.97
      $2.97
      10
      $2.52
      $25.20
      100
      $2.19
      $219.00
      250
      $2.07
      $517.50
      500
      $1.86
      $930.00
      1000
      $1.57
      $1 570.00
      2500
      $1.49
      $3 725.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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