FDN357N

Mfr. #:: FDN357N
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET SSOT-3 N-CH 30V
Lifecycle:: New from this manufacturer.
Datasheet:: FDN357N Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SSOT-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 1.9 A

Rds On - Drain-Source Resistance:: 81 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 500 mW (1/2 W)

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.12 mm

Length:: 2.9 mm

Product:: MOSFET Small Signal

Series:: FDN357N

Transistor Type:: 1 N-Channel

Width:: 1.4 mm

Brand:: ON Semiconductor / Fairchild

Forward Transconductance - Min:: 5 S

Fall Time:: 12 ns

Product Type:: MOSFET

Rise Time:: 12 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 12 ns

Typical Turn-On Delay Time:: 5 ns

Part # Aliases:: FDN357N_NL

Unit Weight:: 0.001058 oz

Tags: FDN357N, FDN357, FDN35, FDN3, FDN

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDN357N Description

***Components: In a Pack of 5, N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 ON Semiconductor FDN357N

***Semiconductor: N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ

***ical: Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R

***ure Electronics: N-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor

***p One Stop Japan: Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R

***ark: 30V N-Fet 60 Mo Ssot3 Rohs Compliant: Yes

*** Source Electronics: MOSFET N-CH 30V 1.9A SSOT3

***trelec: MOSFET Operating temperature: -55...150 °C Marking: 357 Drive: logic level Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 500 mW

***eco: FDN357N,003, PLASTIC MOLDED, S

***ser: MOSFETs SSOT-3 N-CH 30V

***et: 30V N-CH. FET, 60 MO, SSOT3

***nell: MOSFET, N, SOT-23; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:2.5A; Resistance, Rds On:0.08ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.5W; Power, Pd:0.5W; SMD Marking:357; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:30V; Width, External:3.05mm; Width, Tape:8mm

***rchild Semiconductor: SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:357; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V

Market price

Part #	Mfg.	Description	Stock	Price
FDN357N DISTI # V72:2272_06300784	ON Semiconductor	30V N-CH. FET, 60 MO, SSOT3	121	100:$0.1656 25:$0.3474 10:$0.3528 1:$0.4966
FDN357N DISTI # FDN357NCT-ND	ON Semiconductor	MOSFET N-CH 30V 1.9A SSOT3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	25169In Stock	1000:$0.1707 500:$0.2276 100:$0.3319 10:$0.4840 1:$0.6200
FDN357N DISTI # FDN357NDKR-ND	ON Semiconductor	MOSFET N-CH 30V 1.9A SSOT3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	25169In Stock	1000:$0.1707 500:$0.2276 100:$0.3319 10:$0.4840 1:$0.6200
FDN357N DISTI # FDN357NTR-ND	ON Semiconductor	MOSFET N-CH 30V 1.9A SSOT3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	24000In Stock	3000:$0.1519
FDN357N DISTI # 30275702	ON Semiconductor	30V N-CH. FET, 60 MO, SSOT3	121	100:$0.1656 62:$0.3474
FDN357N DISTI # FDN357N	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN357N) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0849 6000:$0.0839 12000:$0.0829 18000:$0.0819 30000:$0.0799
FDN357N DISTI # FDN357N	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R (Alt: FDN357N) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0
FDN357N DISTI # FDN357N	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R (Alt: FDN357N) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.1439 6000:€0.1119 12000:€0.0909 18000:€0.0769 30000:€0.0719
FDN357N DISTI # FDN357N	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Cut TR (SOS) (Alt: FDN357N) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.3559 30:$0.3119 75:$0.2199 150:$0.1689 375:$0.1599 750:$0.1579 1500:$0.1579
FDN357N DISTI # 67R2063	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Tape and Reel (Alt: 67R2063) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	1:$0.1260 12000:$0.1220 18000:$0.1170 30000:$0.1120
FDN357N DISTI # 58K8842	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 58K8842) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.5390 25:$0.4080 50:$0.3150 100:$0.2210 250:$0.2020 500:$0.1850 1000:$0.1660
FDN357N DISTI # 58K8842	ON Semiconductor	N CHANNEL MOSFET, 30V, 1.9A, SUPER SOT-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.6V RoHS Compliant: Yes	4802	1:$0.5390 25:$0.4080 50:$0.3150 100:$0.2210 250:$0.2020 500:$0.1850 1000:$0.1660
FDN357N DISTI # 04X6265	ON Semiconductor	MOSFET, N CH, 30V, 1.9A, SUPERSOT,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	54000	1:$0.1760 3000:$0.1660 6000:$0.1440 12000:$0.1290 18000:$0.1180 30000:$0.1080
FDN357N	ON Semiconductor	N-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor RoHS: Compliant	3000Reel	3000:$0.1120 6000:$0.1060 9000:$0.1050
FDN357N	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	416409	1000:$0.1600 100:$0.1700 500:$0.1700 25:$0.1800 1:$0.1900
FDN357N DISTI # 512-FDN357N	ON Semiconductor	MOSFET SSOT-3 N-CH 30V RoHS: Compliant	4010	1:$0.4900 10:$0.3710 100:$0.2010 1000:$0.1510 3000:$0.1300 9000:$0.1220 24000:$0.1120
FDN357N_Q DISTI # 512-FDN357N_Q	ON Semiconductor	MOSFET SSOT-3 N-CH 30V RoHS: Not compliant	0
FDN357N	Fairchild Semiconductor Corporation		1065
FDN357N	Fairchild Semiconductor Corporation		14998
FDN357N	Fairchild Semiconductor Corporation		4198
FDN357N DISTI # 6710441	ON Semiconductor	MOSFET N-CHANNEL 30V 1.9A SUPERSOT3, PK	315	5:£0.5200 25:£0.2620 100:£0.1420 250:£0.1300 500:£0.1200
FDN357N DISTI # 6710441P	ON Semiconductor	MOSFET N-CHANNEL 30V 1.9A SUPERSOT3, RL	1370	25:£0.2620 100:£0.1420 250:£0.1300 500:£0.1200
FDN357N	Fairchild Semiconductor Corporation	1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3005	1264:$0.1232 254:$0.1584 1:$0.3520
FDN357N	ON Semiconductor	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SUPERSOT-3 RoHS: Compliant	Europe - 3000
FDN357N	Fairchild Semiconductor Corporation	INSTOCK	3000
FDN357N		INSTOCK	320
FDN357N DISTI # 2323189	ON Semiconductor	MOSFET, N CH, 30V, 1.9A, SUPERSOT RoHS: Compliant	54000	3000:£0.1110 9000:£0.0954
FDN357N DISTI # 9845364	ON Semiconductor	MOSFET, N, SOT-23 RoHS: Compliant	26214	1:$0.7750 10:$0.5870 100:$0.3190 1000:$0.2400 3000:$0.2060 9000:$0.1940 24000:$0.1780
FDN357N DISTI # 2323189	ON Semiconductor	MOSFET, N CH, 30V, 1.9A, SUPERSOT RoHS: Compliant	66000	3000:$0.2060
FDN357N DISTI # 1562548	ON Semiconductor	MOSFET, N SOT-23 REEL 3K RoHS: Compliant	0	1:$748.6700 3:$741.1000
FDN357N DISTI # 9845364RL	ON Semiconductor	MOSFET, N, SOT-23 RoHS: Compliant	0	1:$0.7750 10:$0.5870 100:$0.3190 1000:$0.2400 3000:$0.2060 9000:$0.1940 24000:$0.1780
FDN357N DISTI # XSFP00000026676	Fairchild Semiconductor Corporation	RoHS: Compliant	16152	3000:$0.1880 16152:$0.1762

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FDN357N

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes