SIHD7N60E-GE3

Mfr. #:: SIHD7N60E-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CH 600V 7A TO-252
Lifecycle:: New from this manufacturer.
Datasheet:: SIHD7N60E-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SIHD7N60E-GE3 more Information

Product Attribute
Attribute Value

Tags: SIHD7, SIHD, SIH

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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Vacuum Packaging with PL

Step2:
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SIHD7N60E-GE3 Description

***ical: Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK

***et Europe: Trans MOSFET N-CH 600V 7A 3-Pin DPAK

***ure Electronics: MOSFET 600V 600MOHM@10V 7A N-CH E-SRS

***ment14 APAC: MOSFET, N CH, 575V, 7A, TO-252-3

***i-Key: MOSFET N-CH 600V 7A TO-252

***ark: N-CHANNEL 600V

***nell: MOSFET, N-CH, 600V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SIHD7N60E-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Part #	Mfg.	Description	Stock	Price
SIHD7N60E-GE3 DISTI # V99:2348_09218416	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant	3000	5000:$0.8775 2500:$0.9173 1000:$0.9386 500:$1.1127 100:$1.2602 10:$1.6590 1:$2.1913
SIHD7N60E-GE3 DISTI # V36:1790_09218416	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant	0	3000000:$0.8836 1500000:$0.8861 300000:$1.1050 30000:$1.4870 3000:$1.5500
SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 7A TO-252 RoHS: Compliant Min Qty: 1 Container: Bulk	1355In Stock	5000:$0.8845 2500:$0.9185 1000:$0.9866 500:$1.1907 100:$1.4493 10:$1.8030 1:$2.0100
SIHD7N60E-GE3 DISTI # 27527136	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant	3000	7:$2.1913
SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin DPAK (Alt: SIHD7N60E-GE3) RoHS: Compliant Min Qty: 3000	Europe - 2475	30000:€0.7659 18000:€0.8009 12000:€0.9059 6000:€1.1169 3000:€1.5569
SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD7N60E-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SIHD7N60E-GE3 DISTI # 63W4108	Vishay Intertechnologies	Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes	2593	500:$1.1400 100:$1.3000 50:$1.4300 25:$1.5600 10:$1.6900 1:$2.0300
SIHD7N60E-GE3 DISTI # 78-SIHD7N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	1048	1:$2.0100 10:$1.6700 100:$1.2900 500:$1.1300
SIHD7N60E-E3 DISTI # 78-SIHD7N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	0	3000:$0.8750 6000:$0.8430 9000:$0.8100
SIHD7N60E-GE3 DISTI # 2283642	Vishay Intertechnologies	MOSFET, N-CH, 600V, 7A, DPAK RoHS: Compliant	2293	5000:$1.3700 2500:$1.3900 1000:$1.4900 500:$1.8000 100:$2.1900 10:$2.7200 1:$3.0300
SIHD7N60E-GE3 DISTI # 2283642	Vishay Intertechnologies	MOSFET, N-CH, 600V, 7A, DPAK	2304	500:£0.7760 250:£0.8330 100:£0.8880 25:£1.1500 5:£1.3900
SIHD7N60E-GE3 DISTI # XSKDRABV0041556	Vishay Intertechnologies	RoHS: Compliant	2400 in Stock0 on Order	2400:$1.0700 435:$1.1500
SIHD7N60EGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	3000
SIHD7N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	Americas - 3000	50:$1.2450 100:$1.1020 250:$1.0020 500:$0.9800 1000:$0.9260

Related products

Image	Part #	Description
	Mfr.#: SIHD7N60E-GE3 OMO.#: OMO-SIHD7N60E-GE3	MOSFET 600V Vds 30V Vgs DPAK (TO-252)
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	Mfr.#: SIHD7N60E-E3 OMO.#: OMO-SIHD7N60E-E3	MOSFET 600V Vds 30V Vgs DPAK (TO-252)
	Mfr.#: SIHD7N60ET-GE3 OMO.#: OMO-SIHD7N60ET-GE3	MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHD7N60ETR-GE3 OMO.#: OMO-SIHD7N60ETR-GE3-317	RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHD7N60E-E3 OMO.#: OMO-SIHD7N60E-E3-VISHAY	RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
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	Mfr.#: SIHD7N60E OMO.#: OMO-SIHD7N60E-1190	New and Original
	Mfr.#: SIHD7N60E-GE3 OMO.#: OMO-SIHD7N60E-GE3-VISHAY	MOSFET N-CH 600V 7A TO-252
	Mfr.#: SIHD7N60EGE3 OMO.#: OMO-SIHD7N60EGE3-1190	Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of SIHD7N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.31~~; ~~$1.31~~

10: ~~$1.24~~; ~~$12.40~~

100: ~~$1.18~~; ~~$117.50~~

500: ~~$1.11~~; ~~$554.85~~

1000: ~~$1.04~~; ~~$1 044.40~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SIHD7 11
SIHD 46
SIH 797

SIHD7N60E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes