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CMPA0060002F

CMPA0060002F
Mfr. #:
CMPA0060002F
Manufacturer:
N/A
Description:
RF Amplifier GaN MMIC Power Amp 0.02-6.0GHz, 2 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CMPA0060002F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CMPA0060002F more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF Amplifier
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
0.5 in x 0.5 in
Type:
RF Power Amplifier
Technology:
GaN SiC
Operating Frequency:
20 MHz to 6000 MHz
P1dB - Compression Point:
-
Gain:
17 dB
Operating Supply Voltage:
28 V
NF - Noise Figure:
-
Test Frequency:
4 GHz
OIP3 - Third Order Intercept:
23 dBm
Operating Supply Current:
4 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Bandwidth:
20 MHz to 6000 MHz
Product:
GaN
Brand:
Wolfspeed / Cree
Number of Channels:
1 Channel
Development Kit:
-
Input Return Loss:
- 9 dB
Isolation dB:
-
Pd - Power Dissipation:
2 W
Product Type:
RF Amplifier
Factory Pack Quantity:
50
Subcategory:
Wireless & RF Integrated Circuits
Supply Voltage - Max:
-
Supply Voltage - Min:
-
Tags
CMPA006000, CMPA00, CMPA0, CMPA, CMP
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC RF AMP 20MHZ-6GHZ 780019
***hardson RFPD
RF & MW POWER AMPLIFIER
GaN HEMT based MMICs
Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More
Part # Mfg. Description Stock Price
CMPA0060002F
DISTI # CMPA0060002F-ND		WolfspeedIC RF AMP 20MHZ-6GHZ 780019
RoHS: Compliant
Min Qty: 1
Container: Tray		187In Stock
  • 1:$164.1000
CMPA0060002F-TB
DISTI # CMPA0060002F-TB-ND		WolfspeedBOARD DEMO AMP CIRC CMPA0060002
RoHS: Compliant
Min Qty: 1
Container: Bulk		2In Stock
  • 1:$715.0000
CMPA0060002F
DISTI # 941-CMPA0060002F		Cree, Inc.RF Amplifier GaN MMIC Power Amp 0.02-6.0GHz, 2 Watt
RoHS: Compliant		94
  • 1:$164.1000
CMPA0060002F-TB
DISTI # 941-CMPA0060002F-TB		Cree, Inc.RF Development Tools Test Board without GaN MMIC
RoHS: Not compliant		2
  • 1:$715.0000
CMPA0060002F
DISTI # CMPA0060002F		WolfspeedRF & MW POWER AMPLIFIER
RoHS: Compliant		50
  • 1:$164.1000
CMPA0060002F-TB
DISTI # CMPA0060002F-TB		WolfspeedRF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT
RoHS: Compliant		2
  • 2:$715.0000
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Availability
Stock:
50
On Order:
2033
Enter Quantity:
Current price of CMPA0060002F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$174.47
$174.47
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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