IXFN120N20

IXFN120N20
Mfr. #:
IXFN120N20
Manufacturer:
Littelfuse
Description:
MOSFET 200V 120A
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN120N20 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
FETs - Single
Series
IXFN120N20
Packaging
Tube
Unit-Weight
1.340411 oz
Mounting-Style
SMD/SMT
Tradename
HyperFET
Package-Case
SOT-227-4
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single Dual Source
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
600 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
40 ns
Rise-Time
55 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
120 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Rds-On-Drain-Source-Resistance
17 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
110 ns
Typical-Turn-On-Delay-Time
42 ns
Forward-Transconductance-Min
77 S
Channel-Mode
Enhancement
Tags
IXFN120N2, IXFN12, IXFN1, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 200V 120A 4-Pin SOT-227B
***trelec
MOSFET Operating temperature: -55...+150 °C Housing type: SOT-227B Polarity: N Variants: Enhancement mode Power dissipation: 600 W
***ark
Mosfet, N, Sot-227B; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.017Ohm; Transistor Mounting:module; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Part # Mfg. Description Stock Price
IXFN120N20
DISTI # IXFN120N20-ND
IXYS CorporationMOSFET N-CH 200V 120A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube
148In Stock
  • 500:$19.6926
  • 250:$20.6915
  • 100:$22.5466
  • 30:$24.2590
  • 10:$26.4000
  • 1:$28.5400
IXFN120N20
DISTI # 97K2549
IXYS CorporationMOSFET, N, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:600W RoHS Compliant: Yes16
  • 250:$20.6900
  • 100:$22.5500
  • 50:$23.2300
  • 25:$24.0200
  • 10:$24.8200
  • 5:$25.6100
  • 1:$26.4000
IXFN120N20
DISTI # 747-IXFN120N20
IXYS CorporationMOSFET 200V 120A
RoHS: Compliant
0
    IXFN120N20
    DISTI # 9359257
    IXYS CorporationMOSFET, N, SOT-227B
    RoHS: Compliant
    16
    • 250:$30.9600
    • 100:$33.7300
    • 30:$36.3000
    • 10:$39.5000
    • 1:$42.7000
    IXFN120N20
    DISTI # 9359257
    IXYS CorporationMOSFET, N, SOT-227B
    RoHS: Compliant
    23
    • 100:£16.5800
    • 50:£18.6200
    • 10:£19.4400
    • 5:£21.4400
    • 1:£23.4400
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    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of IXFN120N20 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $28.32
    $28.32
    10
    $26.90
    $269.04
    100
    $25.49
    $2 548.80
    500
    $24.07
    $12 036.00
    1000
    $22.66
    $22 656.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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