IRFR3707ZTRPBF

IRFR3707ZTRPBF
Mfr. #:
IRFR3707ZTRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRFR3707ZTRPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IRFR3707ZTRPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
56 A
Rds On - Drain-Source Resistance:
9.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.35 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
9.6 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
50 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Width:
6.22 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
71 S
Fall Time:
3.3 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
12 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
SP001564908
Unit Weight:
0.139332 oz
Tags
IRFR3707ZTR, IRFR3707ZT, IRFR3707Z, IRFR3707, IRFR370, IRFR37, IRFR3, IRFR, IRF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - DPAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: D-PAK; Current Id Max: 56A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 220A; SMD Marking: IRFR3707Z; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Part # Mfg. Description Stock Price
IRFR3707ZTRPBF
DISTI # V72:2272_13891724
Infineon Technologies AGTrans MOSFET N-CH 30V 56A 3-Pin(2+Tab) DPAK T/R1820
  • 1000:$0.2661
  • 500:$0.2957
  • 250:$0.3285
  • 100:$0.3650
  • 25:$0.5087
  • 10:$0.5151
  • 1:$0.6000
IRFR3707ZTRPBF
DISTI # IRFR3707ZTRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 30V 56A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
351In Stock
  • 1000:$0.3943
  • 500:$0.4929
  • 100:$0.6654
  • 10:$0.8630
  • 1:$0.9900
IRFR3707ZTRPBF
DISTI # IRFR3707ZTRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 30V 56A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
351In Stock
  • 1000:$0.3943
  • 500:$0.4929
  • 100:$0.6654
  • 10:$0.8630
  • 1:$0.9900
IRFR3707ZTRPBF
DISTI # IRFR3707ZTRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 56A DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
On Order
  • 2000:$0.3469
IRFR3707ZTRPBF
DISTI # 30737919
Infineon Technologies AGTrans MOSFET N-CH 30V 56A 3-Pin(2+Tab) DPAK T/R1820
  • 1000:$0.2662
  • 500:$0.2957
  • 250:$0.3286
  • 100:$0.3651
  • 29:$0.5088
IRFR3707ZTRPBF
DISTI # IRFR3707ZTRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 56A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR3707ZTRPBF)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel
Asia - 0
    IRFR3707ZTRPBF
    DISTI # IRFR3707ZTRPBF
    Infineon Technologies AGTrans MOSFET N-CH 30V 56A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3707ZTRPBF)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 2000:$0.2499
    • 4000:$0.2409
    • 8000:$0.2319
    • 12000:$0.2249
    • 20000:$0.2209
    IRFR3707ZTRPBF
    DISTI # 13AC9133
    Infineon Technologies AGMOSFET, N-CH, 30V, 56A, TO-252AA,Transistor Polarity:N Channel,Continuous Drain Current Id:56A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes34
    • 1:$0.8600
    • 10:$0.7170
    • 25:$0.6380
    • 50:$0.5600
    • 100:$0.4810
    • 250:$0.4520
    • 500:$0.4240
    • 1000:$0.3950
    IRFR3707ZTRPBF
    DISTI # 70019013
    Infineon Technologies AGIRFR3707ZTRPBF N-channel MOSFET Transistor,56 A,30 V,3-Pin TO-252AA
    RoHS: Compliant
    0
    • 2000:$0.8700
    IRFR3707ZTRPBF
    DISTI # 942-IRFR3707ZTRPBF
    Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC
    RoHS: Compliant
    10853
    • 1:$0.8200
    • 10:$0.6750
    • 100:$0.4350
    • 1000:$0.3480
    IRFR3707ZTRPBF
    DISTI # 2725962
    Infineon Technologies AGMOSFET, N-CH, 30V, 56A, TO-252AA
    RoHS: Compliant
    124
    • 5:£0.5790
    • 25:£0.5110
    • 100:£0.3320
    • 250:£0.3070
    • 500:£0.2820
    IRFR3707ZTRPBF
    DISTI # C1S322000493263
    Infineon Technologies AGTrans MOSFET N-CH 30V 56A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    1820
    • 250:$0.3619
    • 100:$0.3739
    • 25:$0.5164
    • 10:$0.5189
    IRFR3707ZTRPBF
    DISTI # 2725962
    Infineon Technologies AGMOSFET, N-CH, 30V, 56A, TO-252AA
    RoHS: Compliant
    34
    • 1:$1.3100
    • 10:$1.0800
    • 100:$0.6890
    • 1000:$0.5510
    • 2000:$0.4660
    • 10000:$0.4520
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    OMO.#: OMO-EMHS500ARA471MKG5S-1190

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    Availability
    Stock:
    Available
    On Order:
    1986
    Enter Quantity:
    Current price of IRFR3707ZTRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.81
    $0.81
    10
    $0.68
    $6.75
    100
    $0.44
    $43.50
    1000
    $0.35
    $348.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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