FDU6696

FDU6696
Mfr. #:
FDU6696
Manufacturer:
Rochester Electronics, LLC
Description:
Power Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Lifecycle:
New from this manufacturer.
Datasheet:
FDU6696 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
FDU669, FDU66, FDU6, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
N-CHANNEL POWER MOSFET
***ser
MOSFETs 30V N-Ch PowerTrench
***el Nordic
Contact for details
***Yang
MOSFET 30V N-Ch PowerTrench - Bulk
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***et
30V N-Channel PowerTrench MOSFET
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Power Field-Effect Transistor, 54A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
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MOSFETs 30V N-Ch PowerTrench
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ark
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr
***et
Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-251
***ronik
N-CH 30V 35A 11mOhm TO251-3 RoHSconf
***nell
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0088ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
***et
MOSFET N-Ch LL UltraFET PWM Optimized
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Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***et
MOSFET N-Ch LL UltraFET PWM Optimized
***i-Key
N-CHANNEL POWER MOSFET
***et
MOSFET N-Ch UltraFET Trench Logic Level
***el Electronic
Power Field-Effect Transistor, 50A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
Part # Mfg. Description Stock Price
FDU6696_Q
DISTI # 512-FDU6696_Q
ON SemiconductorMOSFET 30V N-Ch PowerTrench
RoHS: Not compliant
0
    FDU6696Fairchild Semiconductor CorporationPower Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant
    3600
    • 1000:$0.8300
    • 500:$0.8700
    • 100:$0.9100
    • 25:$0.9500
    • 1:$1.0200
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    Availability
    Stock:
    Available
    On Order:
    1500
    Enter Quantity:
    Current price of FDU6696 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.24
    $1.24
    10
    $1.18
    $11.83
    100
    $1.12
    $112.05
    500
    $1.06
    $529.15
    1000
    $1.00
    $996.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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