BUZ73

Mfr. #:: BUZ73
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 200V 7A TO220-3
Lifecycle:: New from this manufacturer.
Datasheet:: BUZ73 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BUZ73 Datasheet BUZ73 Datasheet (P4-P6)BUZ73 Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: GaN

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 7 A

Rds On - Drain-Source Resistance:: 400 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 40 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Fall Time:: 30 ns

Product Type:: MOSFET

Rise Time:: 40 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 55 ns

Typical Turn-On Delay Time:: 10 ns

Part # Aliases:: BUZ73XK

Unit Weight:: 0.211644 oz

Tags: BUZ73, BUZ7, BUZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BUZ73 Description

***et Europe: Trans MOSFET N-CH 200V 7A 3-Pin(3+Tab) TO-220

***essParts.Net: INFINEON BUZ73 / MOSFET INFINEON TO-220-UP 200V

***i-Key: MOSFET N-CH 200V 7A TO-220AB

***ark: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:7A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination ;RoHS Compliant: Yes

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:7A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:28A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:40W; Power, Pd:40W; Power, Ptot:40W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:200V

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:40W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Power Dissipation Ptot Max:40W; Pulse Current Idm:28A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

Part #	Mfg.	Description	Stock	Price
BUZ73 DISTI # BUZ73IN-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A TO-220AB RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
BUZ73E3046XK DISTI # BUZ73E3046XK-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A TO-220AB RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
BUZ73A DISTI # BUZ73AIN-ND	Infineon Technologies AG	MOSFET N-CH 200V 5.5A TO-220AB RoHS: Compliant Min Qty: 2000 Container: Tube	Limited Supply - Call
BUZ73AE3046XK DISTI # BUZ73AE3046XK-ND	Infineon Technologies AG	MOSFET N-CH 200V 5.5A TO-220 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
BUZ73AL DISTI # BUZ73ALIN-ND	Infineon Technologies AG	MOSFET N-CH 200V 5.5A TO-220AB RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
BUZ73L DISTI # BUZ73LIN-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A TO-220AB RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
BUZ73HXKSA1 DISTI # BUZ73HXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
BUZ73H3046XKSA1 DISTI # BUZ73H3046XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 200V 5.5A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
BUZ73A H DISTI # BUZ73AH-ND	Infineon Technologies AG	MOSFET N-CH 200V 5.5A TO220-3 RoHS: Compliant Min Qty: 2000 Container: Tube	Limited Supply - Call
BUZ73A H3046 DISTI # BUZ73AH3046-ND	Infineon Technologies AG	MOSFET N-CH 200V 5.5A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
BUZ73ALHXKSA1 DISTI # BUZ73ALHXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 200V 5.5A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
BUZ73LHXKSA1 DISTI # BUZ73LHXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
BUZ73 DISTI # 726-BUZ73	Infineon Technologies AG	MOSFET N-Ch 200V 7A TO220-3 RoHS: Compliant	0
BUZ73A DISTI # 726-BUZ73A	Infineon Technologies AG	MOSFET N-Ch 200V 5.5A TO220-3 RoHS: Compliant	0
BUZ73L DISTI # 726-BUZ73L	Infineon Technologies AG	MOSFET N-Ch 200V 7A TO220-3 RoHS: Compliant	0
BUZ73 H DISTI # 726-BUZ73H	Infineon Technologies AG	MOSFET N-Ch 200V 7A TO220-3 RoHS: Compliant	0
BUZ73A H DISTI # 726-BUZ73AH	Infineon Technologies AG	MOSFET N-Ch 200V 5.5A TO220-3 RoHS: Compliant	0
BUZ73AL H DISTI # 726-BUZ73ALH	Infineon Technologies AG	MOSFET N-Ch 200V 5.5A TO220-3 RoHS: Compliant	0
BUZ73AL DISTI # 726-BUZ73AL	Infineon Technologies AG	MOSFET N-Ch 200V 5.5A TO220-3 RoHS: Compliant	0
BUZ73L H DISTI # 726-BUZ73LH	Infineon Technologies AG	MOSFET N-Ch 200V RoHS: Compliant	0
BUZ73A H3046 DISTI # 726-BUZ73AH3046	Infineon Technologies AG	MOSFET N-Ch 200V 5.5A TO220-3 RoHS: Compliant	0
BUZ73 H3046 DISTI # 726-BUZ73H3046	Infineon Technologies AG	MOSFET N-Ch 200V 7A I2PAK-3 RoHS: Compliant	0
BUZ73HXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	5400	1000:$0.5100 500:$0.5400 100:$0.5600 25:$0.5900 1:$0.6300
BUZ73AH3046	Infineon Technologies AG	RoHS: Not Compliant	12135	1000:$0.4000 500:$0.4200 100:$0.4300 25:$0.4500 1:$0.4900
BUZ73AIN	Infineon Technologies AG	RoHS: Not Compliant	966	1000:$0.3200 500:$0.3300 100:$0.3500 25:$0.3600 1:$0.3900
BUZ73A	Infineon Technologies AG	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	100	1000:$0.4000 500:$0.4200 100:$0.4300 25:$0.4500 1:$0.4900
BUZ73AH	Infineon Technologies AG	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	500	1000:$0.4000 500:$0.4200 100:$0.4300 25:$0.4500 1:$0.4900
BUZ73AHXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	16100	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
BUZ73ALIN	Infineon Technologies AG	RoHS: Not Compliant	503	1000:$0.3200 500:$0.3300 100:$0.3500 25:$0.3600 1:$0.3900
BUZ73AE3046	Infineon Technologies AG	RoHS: Not Compliant	500	1000:$0.3600 500:$0.3700 100:$0.3900 25:$0.4100 1:$0.4400
BUZ73ALHXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	5866	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
BUZ73AE3046XK	Infineon Technologies AG	RoHS: Not Compliant	368	1000:$0.2600 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3200
BUZ73A	Harris Semiconductor	Power Field-Effect Transistor, 5.8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	27043	1000:$0.5900 500:$0.6200 100:$0.6500 25:$0.6800 1:$0.7300
BUZ73A	Siemens		689
BUZ73A	Infineon Technologies AG	MOSFET Transistor, N-Channel, TO-220AB	13209	4262:$0.3360 2001:$0.3520 1:$1.2800
BUZ73A	Siemens	MOSFET Transistor, N-Channel, TO-220AB	1063	447:$0.4000 79:$0.4480 1:$1.2800
BUZ73A	Siemens	MOSFET Transistor, N-Channel, TO-220AB	170	79:$0.4480 17:$0.6400 1:$1.2800
BUZ73AS	Harris Semiconductor	73AS	16
BUZ73	Siemens	Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	Europe - 1224
BUZ73A	Siemens	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	Europe - 11420
BUZ73AL	Siemens	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	Europe - 4549
BUZ73STS	Siemens	RoHS: Not Compliant	Europe - 1533
AS-BUZ73AHL	ams	INSTOCK	1
BUZ73A		INSTOCK	20
BUZ73AL	Siemens	INSTOCK	500
BUZ73 DISTI # BUZ73	Infineon Technologies AG	TRANSISTOR RoHS: Compliant	150
BUZ73L DISTI # 1056533	Infineon Technologies AG	RoHS: Compliant	0	25:$1.0400 1:$1.6800

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BUZ73

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes