IRF60R217

IRF60R217
Mfr. #:
IRF60R217
Manufacturer:
Infineon / IR
Description:
MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg
Lifecycle:
New from this manufacturer.
Datasheet:
IRF60R217 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF60R217 DatasheetIRF60R217 Datasheet (P4-P6)IRF60R217 Datasheet (P7-P9)IRF60R217 Datasheet (P10-P11)
ECAD Model:
More Information:
IRF60R217 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
58 A
Rds On - Drain-Source Resistance:
8 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
40 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
83 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
StrongIRFET
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Width:
6.22 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
120 S
Fall Time:
12 ns
Product Type:
MOSFET
Rise Time:
29 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
21 ns
Typical Turn-On Delay Time:
7.6 ns
Part # Aliases:
SP001559662
Unit Weight:
0.081130 oz
Tags
IRF60, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2000, N-Channel MOSFET, 58 A, 60 V, 3-Pin DPAK Infineon IRF60R217
***ure Electronics
Single N-Channel 60 V 9.9 mOhm 40 nC HEXFET® Power Mosfet - DPAK
***ical
Trans MOSFET N-CH Si 60V 58A 3-Pin(2+Tab) TO-252 T/R
***et
Trans MOSFET N 60V 58A 3-Pin DPAK T/R
***i-Key
MOSFET N-CH 60V 58A
***ark
Mosfet, N-Ch, 60V, 58A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.008Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Dissipationrohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 60V, 58A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 60V, 58A, TO-252; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:58A; Napięcie drenu / źródła Vds:60V; Rezystancja przewodzenia Rds(on):0.008ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3.7V; Straty mocy Pd:83W; Rodzaj obudowy tranzystora:TO-252; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Part # Mfg. Description Stock Price
IRF60R217
DISTI # V72:2272_14701517
Infineon Technologies AGTrans MOSFET N-CH Si 60V 58A T/R
RoHS: Compliant
1040
  • 1000:$0.5780
  • 500:$0.7042
  • 250:$0.7654
  • 100:$0.7915
  • 25:$0.9714
  • 10:$0.9832
  • 1:$1.1142
IRF60R217
DISTI # IRF60R217CT-ND
Infineon Technologies AGMOSFET N-CH 60V 58A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1214In Stock
  • 1000:$0.7585
  • 500:$0.9608
  • 100:$1.2389
  • 10:$1.5680
  • 1:$1.7700
IRF60R217
DISTI # IRF60R217DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 58A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1214In Stock
  • 1000:$0.7585
  • 500:$0.9608
  • 100:$1.2389
  • 10:$1.5680
  • 1:$1.7700
IRF60R217
DISTI # IRF60R217TR-ND
Infineon Technologies AGMOSFET N-CH 60V 58A
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$0.6873
IRF60R217
DISTI # 30181895
Infineon Technologies AGTrans MOSFET N-CH Si 60V 58A T/R
RoHS: Compliant
1040
  • 1000:$0.5780
  • 500:$0.7042
  • 250:$0.7654
  • 100:$0.7915
  • 25:$0.9714
  • 15:$0.9832
IRF60R217
DISTI # IRF60R217
Infineon Technologies AGTrans MOSFET N 60V 58A 3-Pin DPAK T/R - Tape and Reel (Alt: IRF60R217)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 2000:$0.5139
  • 4000:$0.4949
  • 8000:$0.4769
  • 12000:$0.4609
  • 20000:$0.4529
IRF60R217
DISTI # 34AC1773
Infineon Technologies AGMOSFET, N-CH, 60V, 58A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:58A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,Power DissipationRoHS Compliant: Yes3806
  • 1:$1.4700
  • 10:$1.2500
  • 25:$1.1500
  • 50:$1.0600
  • 100:$0.9600
  • 250:$0.9040
  • 500:$0.8480
  • 1000:$0.6700
IRF60R217
DISTI # 942-IRF60R217
Infineon Technologies AGMOSFET 60V, 58A, 9.9 mOhm 40 nC Qg
RoHS: Compliant
5380
  • 1:$1.4700
  • 10:$1.2500
  • 100:$0.9600
  • 500:$0.8480
  • 1000:$0.6700
IRF60R217
DISTI # 1236145P
Infineon Technologies AGSTRONGIR FET 60V 58A9.9 MOHMDPAK, RL1920
  • 50:£0.3720
IRF60R217
DISTI # 2781111
Infineon Technologies AGMOSFET, N-CH, 60V, 58A, TO-252
RoHS: Compliant
3806
  • 5:$2.2100
  • 25:$1.9300
  • 100:$1.5700
  • 250:$1.3300
  • 500:$1.1500
  • 1000:$1.0900
  • 5000:$1.0300
IRF60R217
DISTI # 2781111
Infineon Technologies AGMOSFET, N-CH, 60V, 58A, TO-252
RoHS: Compliant
3811
  • 5:£0.7330
  • 25:£0.6070
  • 100:£0.5440
  • 250:£0.5020
  • 500:£0.4690
IRF60R217
DISTI # C1S322000625738
Infineon Technologies AGMOSFETs1040
  • 250:$0.8080
  • 100:$0.8106
  • 25:$0.9864
  • 10:$0.9909
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SFSD2048N3BM1TO-I-GE-2CP-STD

Mfr.#: SFSD2048N3BM1TO-I-GE-2CP-STD

OMO.#: OMO-SFSD2048N3BM1TO-I-GE-2CP-STD

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Mfr.#: TPD4E02B04DQAR

OMO.#: OMO-TPD4E02B04DQAR

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Schottky Diodes & Rectifiers 40V, 1 A low VF MEGA Schottky barrier rectifier, 3k Reel
L1I0-0940060000000

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M20-7910642R

Mfr.#: M20-7910642R

OMO.#: OMO-M20-7910642R

Headers & Wire Housings 6 WAY SIL HORIZ SMT SKT T&R
PMEG4010EGWX

Mfr.#: PMEG4010EGWX

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ISOW7841DWER

Mfr.#: ISOW7841DWER

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Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of IRF60R217 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.46
$1.46
10
$1.25
$12.50
100
$0.96
$96.00
500
$0.85
$424.00
1000
$0.67
$670.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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