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IRFSL4227PBF

IRFSL4227PBF
Mfr. #:
IRFSL4227PBF
Manufacturer:
Infineon Technologies
Description:
Darlington Transistors MOSFET MOSFT 200V 65A 26mOhm 70nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRFSL4227PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFSL4227PBF DatasheetIRFSL4227PBF Datasheet (P4-P6)IRFSL4227PBF Datasheet (P7-P9)IRFSL4227PBF Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
IR
Product Category
FETs - Single
Packaging
Tube
Unit-Weight
0.084199 oz
Mounting-Style
Through Hole
Package-Case
I2PAK-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
330 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 40 C
Fall-Time
31 ns
Rise-Time
20 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuous-Drain-Current
62 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Rds-On-Drain-Source-Resistance
26 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
21 ns
Typical-Turn-On-Delay-Time
33 ns
Qg-Gate-Charge
70 nC
Forward-Transconductance-Min
49 S
Channel-Mode
Enhancement
Tags
IRFSL42, IRFSL4, IRFSL, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFSL4227PBF N-channel MOSFET Transistor, 62 A, 200 V, 3-Pin TO-262
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-262 package, TO262-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***nell
MOSFET, N-CH, 200V, 62A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 62A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET Switch in a TO-262 package, TO262-3, RoHS
***Yang
Trans MOSFET N-CH 200V 72A 3-Pin(3+Tab) TO-262 Tube - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 200V, 76A, 23.2 MOHM, 100 NC QG, TO-262
*** Services
CoC and 2-years warranty / RFQ for pricing
***ark
HEXFET Power MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:72A; On Resistance, Rds(on):18.6mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:4-TO-262 ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRFSL4321PBF N-channel MOSFET Transistor, 85 A, 150 V, 3-Pin TO-262
***ure Electronics
Single N-Channel 150 V 15 mOhm 110 nC HEXFET® Power Mosfet - TO-262
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ark
TUBE / MOSFET, 150V, 83A, 15 mOhm, 71 nC Qg, TO-262
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***nell
MOSFET, N-CH, 150V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
*** Electronics
INFINEON IRFSL38N20DPBF MOSFET Transistor, N Channel, 43 A, 200 V, 0.054 ohm, 10 V, 5 VNew
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 200V, 44A, 54 mOhm, 60 nC Qg, TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):54mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***nell
MOSFET, N, 200V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:200V; Current, Id cont:44A; Resistance, Rds on:54ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK (TO-263); Current, Id cont @ 100 degree C:32A; Current, Id cont @ 25 degree C:44A; Current, Idm pulse:180A; Power, Pd:320W; Termination Type:SMD; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds:200V; Voltage, Vds max:200V; Voltage, Vgs th max:5V; Voltage, Vgs th min:3V; Rth:0.47
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET, N CH, 200V, 24A, TO262; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:200V; On Resistance Rds(on):63.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Package / Case:TO-262; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 400 V 0.55 Ohms Surface Mount Power Mosfet - TO-262
***nell
N CHANNEL MOSFET, 400V, 10A, I2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold
***icontronic
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***roFlash
Transistor, mosfet, n-Channel, 100V V(Br)Dss, 56A I(D), to-262Aa Rohs Compliant: Yes
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***r Electronics
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET, N-CH, 100V, 56A, TO-262AA; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Part # Mfg. Description Stock Price
IRFSL4227PBF
DISTI # IRFSL4227PBF-ND		Infineon Technologies AGMOSFET N-CH 200V 62A TO-262
RoHS: Compliant
Min Qty: 200
Container: Tube		Limited Supply - Call
    IRFSL4227PBF
    DISTI # 91Y4713    		Infineon Technologies AGMOSFET, N-CH, 200V, 62A, TO-262-3,Transistor Polarity:N Channel,Continuous Drain Current Id:62A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power , RoHS Compliant: Yes365
    • 1:$4.3200
    • 10:$3.6700
    • 25:$3.5100
    • 50:$3.3400
    • 100:$3.1800
    • 250:$3.0200
    • 500:$2.6900
    IRFSL4227PBF
    DISTI # 942-IRFSL4227PBF    		Infineon Technologies AGMOSFET MOSFT 200V 65A 26mOhm 70nC
    RoHS: Compliant    		0
      IRFSL4227PBFInternational Rectifier 
      RoHS: Compliant      		Europe - 150
        IRFSL4227PBF
        DISTI # 2580032        		Infineon Technologies AGMOSFET, N-CH, 200V, 62A, TO-262-3
        RoHS: Compliant        		365
        • 1:£3.6000
        • 10:£2.7400
        • 100:£2.3700
        • 250:£2.2500
        • 500:£2.0100
        IRFSL4227PBF
        DISTI # 2580032        		Infineon Technologies AGMOSFET, N-CH, 200V, 62A, TO-262-3
        RoHS: Compliant        		365
        • 1:$5.0800
        • 10:$4.7500
        • 100:$4.2000
        • 250:$3.9700
        • 500:$3.7700
        • 1000:$3.5800
        • 2500:$3.5200
        • 5000:$3.2600
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        Availability
        Stock:
        Available
        On Order:
        5000
        Enter Quantity:
        Current price of IRFSL4227PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $3.90
        $3.90
        10
        $3.70
        $37.05
        100
        $3.51
        $351.00
        500
        $3.32
        $1 657.50
        1000
        $3.12
        $3 120.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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