2N7002TA

Mfr. #:: 2N7002TA
Manufacturer:: Diodes Incorporated
Description:: MOSFET N Channel
Lifecycle:: New from this manufacturer.
Datasheet:: 2N7002TA Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: 2N7002TA Datasheet 2N7002TA Datasheet (P4-P5)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Diodes Incorporated

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-23-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 115 mA

Rds On - Drain-Source Resistance:: 7.5 Ohms

Vgs - Gate-Source Voltage:: 40 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 330 mW

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1 mm

Length:: 2.9 mm

Product:: MOSFET Small Signal

Series:: 2N7002T

Transistor Type:: 1 N-Channel

Type:: FET

Width:: 1.3 mm

Brand:: Diodes Incorporated

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 11 ns

Typical Turn-On Delay Time:: 7 ns

Unit Weight:: 0.000282 oz

Tags: 2N7002TA, 2N7002T, 2N7002, 2N700, 2N70, 2N7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

2N7002TA Description

***ical: Trans MOSFET N-CH 60V 0.115A Automotive 3-Pin SOT-23 T/R

***et Europe: Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R

***Components: MOSFET N-Channel 60V 0.115A SOT23

***ter Electronics: ZETEX N-CH 60V MOSFET SOT23 3K

***i-Key: MOSFET N-CH 60V 115MA SOT23-3

***inecomponents.com: N-Channel MOSFET TO92

***ronik: N-CH MOS 0,115A VGS40V SOT23

***ser: MOSFETs N Channel

***ark: ; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:0.5A; On Resistance, Rds(on):7.5ohm; Package/Case:SOT-23; Termination Type:SMD; Current, Idm pulse:0.8A; Drain-Source Breakdown Voltage:60V ;RoHS Compliant: Yes

***C: Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R

***ment14 APAC: Prices include import duty and tax. MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:330mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Current Id Max:115mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:1(G), 2(S),3(D); Pulse Current Idm:800mA; Termination Type:Surface Mount Device; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

***nell: MOSFET, N, SOT-23; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:115mA; Napięcie drenu / źródła Vds:60V; Rezystancja przewodzenia Rds(on):7.5ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:2.5V; Straty mocy Pd:330mW; Rodzaj obudowy tranzystora:SOT-23; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (15-Jan-2018); Konfiguracja pinów:1(G), 2(S),3(D); Maks. prąd Id:115mA; Napięcie Vds, typ.:60V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs th, maks.:2.5V; Napięcie Vgs th, min.:1V; Napięcie Vgs, maks.:2.5V; Opakowanie:Taśma cięta; Prąd impulsowy Idm:800mA; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C

Market price

Part #	Mfg.	Description	Stock	Price
2N7002TA DISTI # 2N7002TR-ND	Diodes Incorporated	MOSFET N-CH 60V 115MA SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
2N7002TA DISTI # 2N7002CT-ND	Diodes Incorporated	MOSFET N-CH 60V 115MA SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
2N7002TA DISTI # 2N7002DKR-ND	Diodes Incorporated	MOSFET N-CH 60V 115MA SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
2N7002TA DISTI # 70437210	Diodes Incorporated	MOSFET N-Channel 60V 0.115A SOT23 RoHS: Compliant	0	500:$0.0790 1000:$0.0690 2500:$0.0620 5000:$0.0570
2N7002TA DISTI # 522-2N7002TA	Diodes Incorporated	MOSFET N Channel RoHS: Compliant	0
2N7002TA	Zetex / Diodes Inc		2198
2N7002TA	Zetex / Diodes Inc		642
2N7002TA	Diodes Incorporated		40
2N7002TA	Zetex / Diodes Inc	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)	20	1:$0.1650
2N7002TA	Zetex / Diodes Inc	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)	8	1:$0.1650
2N7002TA	Zetex / Diodes Inc	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)	387	338:$0.0990 39:$0.1485 1:$0.3300
2N7002TA	Zetex / Diodes Inc	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)	753	506:$0.0660 62:$0.0990 1:$0.3300
2N7002TA	Zetex / Diodes Inc	RoHS: Compliant	Europe - 2615
2N7002TA	22842	INSTOCK	28659
2N7002TA	Zetex / Diodes Inc	INSTOCK	8853
2N7002TA	Zetex / Diodes Inc	INSTOCK	10724

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Availability

Stock:: Available
On Order:: 2500
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2N7002TA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes