TH58NVG2S3HBAI6

TH58NVG2S3HBAI6
Mfr. #:
TH58NVG2S3HBAI6
Manufacturer:
Toshiba Memory
Description:
NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)
Lifecycle:
New from this manufacturer.
Datasheet:
TH58NVG2S3HBAI6 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TH58NVG2S3HBAI6 more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
NAND Flash
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
VFBGA-67
Memory Size:
4 Gbit
Interface Type:
Parallel
Organization:
512 M x 8
Data Bus Width:
8 bit
Supply Voltage - Min:
2.7 V
Supply Voltage - Max:
3.6 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Packaging:
Tray
Memory Type:
NAND
Brand:
Toshiba Memory
Moisture Sensitive:
Yes
Product Type:
NAND Flash
Factory Pack Quantity:
210
Subcategory:
Memory & Data Storage
Tags
TH58NVG2S3HB, TH58NVG2S3H, TH58NVG2, TH58NVG, TH58NV, TH58N, TH58, TH5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TH58NVG Series 16GB CMOS NAND EEPROM
Toshiba TH58NVG Series 16GB CMOS Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) offers 3.3V and is organized as (4096+256) bytes x 64 pages x 8192 blocks. Program and read data is transferred between the register and the memory cell array in 4352-byte increments, granted through two 4352-byte static registers. I/O pins are utilized for both address and data input/output including command inputs through the TH58NVG Series serial type memory. Applications include image file memory for still cameras, solid-state file storage and voice recording.Learn More
Image Part # Description
TH58NVG4S0FBAID

Mfr.#: TH58NVG4S0FBAID

OMO.#: OMO-TH58NVG4S0FBAID

NAND Flash 3.3V 16Gb 32nm ITemp SLC NAND (EEPROM)
TH58NVG3S0HBAI4

Mfr.#: TH58NVG3S0HBAI4

OMO.#: OMO-TH58NVG3S0HBAI4-TOSHIBA-MEMORY-AMERICA

Flash Memory 3.3V 8Gbit NAND EEPROM
TH58NVG1S3AXLKO

Mfr.#: TH58NVG1S3AXLKO

OMO.#: OMO-TH58NVG1S3AXLKO-1190

New and Original
TH58NVG2S3HTA00B4H

Mfr.#: TH58NVG2S3HTA00B4H

OMO.#: OMO-TH58NVG2S3HTA00B4H-1190

New and Original
TH58NVG3S0HTAI0_TRAY

Mfr.#: TH58NVG3S0HTAI0_TRAY

OMO.#: OMO-TH58NVG3S0HTAI0-TRAY-1151

NAND Flash Memory (Alt: TH58NVG3S0HTAI0_TRAY)
TH58NVG4D4CTG00

Mfr.#: TH58NVG4D4CTG00

OMO.#: OMO-TH58NVG4D4CTG00-1190

New and Original
TH58NVG4D4CXLM3

Mfr.#: TH58NVG4D4CXLM3

OMO.#: OMO-TH58NVG4D4CXLM3-1190

New and Original
TH58NVG7D2FTA20

Mfr.#: TH58NVG7D2FTA20

OMO.#: OMO-TH58NVG7D2FTA20-1190

New and Original
TH58NVG2S3HBAI4

Mfr.#: TH58NVG2S3HBAI4

OMO.#: OMO-TH58NVG2S3HBAI4-TOSHIBA-MEMORY-AMERICA

SLC NAND Flash 3.3V 4G-bit
TH58NVG2S3HTAI0-ND

Mfr.#: TH58NVG2S3HTAI0-ND

OMO.#: OMO-TH58NVG2S3HTAI0-ND-1190

New and Original
Availability
Stock:
Available
On Order:
1000
Enter Quantity:
Current price of TH58NVG2S3HBAI6 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
210
$4.10
$861.00
420
$4.08
$1 713.60
630
$3.82
$2 406.60
1050
$3.66
$3 843.00
2520
$3.43
$8 643.60
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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