TK2R9E10PL,S1X

TK2R9E10PL,S1X
Mfr. #:
TK2R9E10PL,S1X
Manufacturer:
Toshiba
Description:
MOSFET Power MOSFET ID=240A VDSS=100V
Lifecycle:
New from this manufacturer.
Datasheet:
TK2R9E10PL,S1X Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TK2R9E10PL,S1X more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
240 A
Rds On - Drain-Source Resistance:
2.4 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
83 nC, 161 nC
Pd - Power Dissipation:
306 W
Channel Mode:
Enhancement
Packaging:
Tube
Series:
TK2R9E10PL
Brand:
Toshiba
Fall Time:
46 ns
Product Type:
MOSFET
Rise Time:
22 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Tags
TK2
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TK2R9E10PL Silicon N-channel MOSFET
Toshiba TK2R9E10PL Silicon N-channel MOSFET is a high-speed switching device with a small gate charge of 48nC. The device features a small output charge of 164nC. The TK2R9E10PL also has a low drain-source on-resistance RDS(ON) that equals 2.4mΩ and low leakage current.
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Availability
Stock:
220
On Order:
2203
Enter Quantity:
Current price of TK2R9E10PL,S1X is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.03
$3.03
10
$2.44
$24.40
100
$2.20
$220.00
500
$1.71
$855.00
1000
$1.42
$1 420.00
2500
$1.32
$3 300.00
5000
$1.27
$6 350.00
10000
$1.10
$11 000.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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