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SIZ920DT-T1-GE3

SIZ920DT-T1-GE3
Mfr. #:
SIZ920DT-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 30V 40A 100W 7.1mohm @ 10V
Lifecycle:
New from this manufacturer.
Datasheet:
SIZ920DT-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Vishay Siliconix
Product Category
FETs - Arrays
Series
TrenchFETR
Packaging
Digi-ReelR Alternate Packaging
Part-Aliases
SIZ920DT-GE3
Mounting-Style
SMD/SMT
Package-Case
6-PowerPair
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
2 Channel
Supplier-Device-Package
6-PowerPair
Configuration
Dual
FET-Type
2 N-Channel (Half Bridge)
Power-Max
39W, 100W
Transistor-Type
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Input-Capacitance-Ciss-Vds
1260pF @ 15V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
40A
Rds-On-Max-Id-Vgs
7.1 mOhm @ 18.9A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Charge-Qg-Vgs
35nC @ 10V
Pd-Power-Dissipation
100 W
Id-Continuous-Drain-Current
40 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
7.1 mOhms
Transistor-Polarity
N-Channel
Channel-Mode
Enhancement
Tags
SIZ920D, SIZ920, SIZ92, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 22A/32A 8-Pin PowerPAIR EP T/R
***ark
MOSFET, N-CH, DUAL, 30V, PP 5X6
***nell
MOSFET, N-CH, DUAL, 30V, PP 5X6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:100W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAIR; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Part # Mfg. Description Stock Price
SIZ920DT-T1-GE3
DISTI # SIZ920DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIZ920DT-T1-GE3
    DISTI # SIZ920DT-T1-GE3CT-ND    		Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIR
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIZ920DT-T1-GE3
      DISTI # SIZ920DT-T1-GE3DKR-ND      		Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIR
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIZ920DT-T1-GE3
        DISTI # SIZ920DT-T1-GE3        		Vishay IntertechnologiesTrans MOSFET N-CH 30V 22A/32A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ920DT-T1-GE3)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel        		Americas - 27000
          SIZ920DT-T1-GE3
          DISTI # 78-SIZ920DT-T1-GE3          		Vishay IntertechnologiesMOSFET 30V 40A 100W 7.1mohm @ 10V
          RoHS: Compliant          		0
            SIZ920DTT1GE3Vishay Intertechnologies 
            RoHS: Compliant            		Europe - 3000
              SIZ920DT-T1-GE3
              DISTI # 2283688              		Vishay IntertechnologiesMOSFET, N-CH, DUAL, 30V, PP 5X6
              RoHS: Compliant              		90
              • 5:£1.1200
              • 25:£1.0200
              • 100:£0.7850
              • 250:£0.7340
              • 500:£0.6840
              SIZ920DT-T1-GE3
              DISTI # 2283688              		Vishay IntertechnologiesMOSFET, N-CH, DUAL, 30V, PP 5X6
              RoHS: Compliant              		0
              • 1:$3.6500
              • 10:$3.0200
              • 100:$2.3700
              • 500:$1.9500
              Image Part # Description
              SIZ920DT-T1-GE3

              Mfr.#: SIZ920DT-T1-GE3

              OMO.#: OMO-SIZ920DT-T1-GE3

              		 MOSFET RECOMMENDED ALT 78-SIZ998DT-T1-GE3
              SIZ920DT-T1-GE3

              Mfr.#: SIZ920DT-T1-GE3

              OMO.#: OMO-SIZ920DT-T1-GE3-VISHAY

              		 RF Bipolar Transistors MOSFET 30V 40A 100W 7.1mohm @ 10V
              SIZ920DT

              Mfr.#: SIZ920DT

              OMO.#: OMO-SIZ920DT-1190

              		 New and Original
              SIZ920DTT1GE3

              Mfr.#: SIZ920DTT1GE3

              OMO.#: OMO-SIZ920DTT1GE3-1190

              		 Power Field-Effect Transistor, 40A I(D), 30V, 0.0071ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
              Availability
              Stock:
              Available
              On Order:
              1500
              Enter Quantity:
              Current price of SIZ920DT-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
              Reference price (USD)
              Quantity
              Unit Price
              Ext. Price
              1
              $2.50
              $2.50
              10
              $2.38
              $23.80
              100
              $2.25
              $225.45
              500
              $2.13
              $1 064.65
              1000
              $2.00
              $2 004.00
              Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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