IRF6623TRPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

DirectFET-ST

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

16 A

Rds On - Drain-Source Resistance:

9.7 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

11 nC

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

42 W

Configuration:

Single

Packaging:

Reel

Height:

0.7 mm

Length:

4.85 mm

Transistor Type:

1 N-Channel

Width:

3.95 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

34 S

Fall Time:

4.5 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

40 ns

Factory Pack Quantity:

4800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

12 ns

Typical Turn-On Delay Time:

9.7 ns

Part # Aliases:

SP001526818

Tags

IRF6623T, IRF6623, IRF662, IRF66, IRF6, IRF