AO4466

Mfr. #:: AO4466
Manufacturer:: Alpha & Omega Semiconductor Inc
Description:: MOSFET N-CH 30V 10A 8-SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: AO4466 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: AO4466 Datasheet AO4466 Datasheet (P4-P6)
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Product Attribute
Attribute Value

Tags: AO4466, AO446, AO44, AO4

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AO4466 Description

***enic: 30V 10A 3.1W 23m´Î@10V10A 2.6V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS

***ical: Trans MOSFET N-CH 30V 9.4A 8-Pin SOIC

***ha & Omega Semiconductor SCT: 30V N-Channel MOSFET, SO-8, RoHS

***et Japan: Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 30 V 20.5/13.7 mOhm 10/21 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 30V,ID 9.1 A (Control FET), 11 A (Synchronous FET),SO-8

***ineon SCT: 30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET

***nell: MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0137ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow

***trelec: Transistor Polarity = N-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

***ure Electronics: DMP3036SSD Series 30 V 10.6 A P-Channel Enhancement Mode Mosfet - SO-8

***ark: Dual Mosfet, P-Ch, 30V, 18A, Soic Rohs Compliant: Yes

***ical: Trans MOSFET P-CH 30V 10.6A 8-Pin SO T/R

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ronik: P+P-CH -30V -18A 20mOhm SO-8 R

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;ID 7.6 A (Control FET), 11 A (Synchronous FET);SO-8

***et: Trans MOSFET N-CH 30V 7.6A/11A 8-Pin SOIC T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):10.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, NN CH, 30VSO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):8.6mohm; Power Dissipation Pd:2W

***Yang: Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

***ure Electronics: P-Channel 30 V 20 mO Surface Mount PowerTrench Mosfet - SOIC-8

***-Wing Technology: ON SEMICONDUCTOR - FDS4435BZ - P CHANNEL MOSFET, -30V, 8.8A, SOIC

***rchild Semiconductor: This P–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***ure Electronics: N-Channel 30 V 23 mOhm 13 nC Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ

***Yang: Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R - Tape and Reel

***enic: 30V 8.5A 23m´Î@10V8.5A 2.5W 2.5V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

***nell: MOSFET, N, SO-8; Transistor Polarity:N; Current Id Max:8.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SO; No. of Pins:8; SVHC:No SVHC (18-Jun-2010); Continuous Drain Current, Id:8.5A; Package / Case:SO-8 (SOIC-8); Termination Type:SMD; Threshold Voltage Vgs Typ:1.7V; Transistor Type:PowerTrench; Typ Voltage Vds:30V; Voltage Vgs Rds on Measurement:10V

***et Europe: Trans MOSFET N/P-CH 30V 8.5A/7A 8-Pin SOIC T/R

***ure Electronics: DMC3021LSD Series 30 V 21 mOhm Complementary Pair Enhancement Mode Mosfet

***ark: DUAL MOSFET, COMPLEMENT, 30V, 8.5A, SOIC ROHS COMPLIANT: YES

*** Stop Electro: Power Field-Effect Transistor, 8.5A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Market price

Part #	Mfg.	Description	Stock	Price
AO4466 DISTI # V36:1790_07841120	Alpha & Omega Semiconductor	Trans MOSFET N-CH 30V 10A 8-Pin SOIC T/R RoHS: Compliant	0	3000000:$0.1079 1500000:$0.1081 300000:$0.1215 30000:$0.1433 3000:$0.1469
AO4466 DISTI # AO4466	Alpha & Omega Semiconductor	Transistor: N-MOSFET,unipolar,30V,7A,2W,SO8	786	3000:$0.1385 500:$0.1487 100:$0.1655 25:$0.1869 3:$0.2083

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	Mfr.#: AO4414L/AO4414 OMO.#: OMO-AO4414L-AO4414-1190	New and Original
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Availability

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Current price of AO4466 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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AO4466

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes