MRFE6VP6300HSR5

MRFE6VP6300HSR5
Mfr. #:
MRFE6VP6300HSR5
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors VHV6 300W50VISM NI780S-4
Lifecycle:
New from this manufacturer.
Datasheet:
MRFE6VP6300HSR5 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
MRFE6VP6300HSR5 more Information MRFE6VP6300HSR5 Product Details
Product Attribute
Attribute Value
Manufacturer
NXP / Freescale
Product Category
Transistors - FETs, MOSFETs - Single
Series
MRFE6VP6300H
Type
RF Power MOSFET
Packaging
Reel
Unit-Weight
0.161213 oz
Mounting-Style
SMD/SMT
Package-Case
NI-780S-4
Technology
Si
Gain
26.6 dB at 230 MHz
Output-Power
300 W at Peak
Pd-Power-Dissipation
1050 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 30 C
Operating-Frequency
1.8 MHz to 600 MHz
Vgs-Gate-Source-Voltage
10 V
Vds-Drain-Source-Breakdown-Voltage
130 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Transistor-Polarity
N-Channel
Tags
MRFE6VP6300H, MRFE6VP63, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1826
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
***et
LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 1.8-600 MHZ, 30
***ical
Trans RF MOSFET N-CH 130V 5-Pin NI-780S T/R
***et Europe
Trans MOSFET N-CH 130V 4-Pin NI-780S T/R
***hardson RFPD
RF POWER TRANSISTOR LDMOS
***i-Key
FET RF 2CH 130V 230MHZ NI780S-4
***ark
RF POWER FET, N CH, 125V, NI-780S-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; Gain:26.5dB ;RoHS Compliant: Yes
MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
Part # Mfg. Description Stock Price
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5-ND
NXP SemiconductorsFET RF 2CH 130V 230MHZ NI780S-4
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 50:$95.5168
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5
Avnet, Inc.Trans MOSFET N-CH 130V 4-Pin NI-780S T/R - Tape and Reel (Alt: MRFE6VP6300HSR5)
RoHS: Compliant
Min Qty: 50
Container: Reel
Americas - 0
  • 50:$97.2900
  • 100:$93.4900
  • 200:$89.7900
  • 300:$86.5900
  • 500:$84.8900
MRFE6VP6300HSR5
DISTI # 13T4415
NXP SemiconductorsRF POWER FET, N CHANNEL, 125V, NI-780S-4,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:300W,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-780S,MSL:- RoHS Compliant: Yes0
  • 1:$111.5100
  • 10:$105.5200
  • 25:$100.1400
  • 50:$96.8000
  • 100:$88.8200
  • 250:$86.1900
  • 500:$83.4900
MRFE6VP6300HSR5
DISTI # 841-MRFE6VP6300HSR5
NXP SemiconductorsRF MOSFET Transistors VHV6 300W50VISM NI780S-4
RoHS: Compliant
0
  • 50:$95.5200
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
25
  • 1:$111.6900
  • 10:$103.2200
  • 25:$100.1900
Image Part # Description
MRFE6VP6300HR5

Mfr.#: MRFE6VP6300HR5

OMO.#: OMO-MRFE6VP6300HR5

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Mfr.#: MRFE6VP61K25NR6528

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Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
MRFE6VP61K25HSR5

Mfr.#: MRFE6VP61K25HSR5

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RF MOSFET Transistors VHV6 1.25KW ISM NI1230HS
MRFE6VP5600HR5

Mfr.#: MRFE6VP5600HR5

OMO.#: OMO-MRFE6VP5600HR5-NXP-SEMICONDUCTORS

RF MOSFET Transistors VHV6 600W 50V NI1230H
MRFE6VP8600HR5

Mfr.#: MRFE6VP8600HR5

OMO.#: OMO-MRFE6VP8600HR5-NXP-SEMICONDUCTORS

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Availability
Stock:
Available
On Order:
5000
Enter Quantity:
Current price of MRFE6VP6300HSR5 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$125.24
$125.24
10
$118.97
$1 189.73
100
$112.71
$11 271.15
500
$106.45
$53 224.90
1000
$100.19
$100 188.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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