TGF2023-2-20

TGF2023-2-20
Mfr. #:
TGF2023-2-20
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2023-2-20 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2023-2-20 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
21 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
50 V
Vgs - Gate-Source Breakdown Voltage:
145 V
Id - Continuous Drain Current:
1.46 A
Output Power:
8.7 W
Maximum Drain Gate Voltage:
55 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Pd - Power Dissipation:
13 W
Mounting Style:
SMD/SMT
Package / Case:
SMD-8
Packaging:
Reel
Operating Frequency:
30 MHz to 1200 MHz
Series:
QPD1011
Brand:
Qorvo
Forward Transconductance - Min:
-
Development Kit:
QPD1011EVB01
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Part # Aliases:
QPD1011
Tags
TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0 to 18 GHz, 90 W, 11.1 dB, 28 V, GaN
***S
new, original packaged
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
Part # Mfg. Description Stock Price
TGF2023-2-20
DISTI # 772-TGF2023-2-20
QorvoRF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
RoHS: Compliant
0
  • 50:$147.8300
Image Part # Description
TGF2025

Mfr.#: TGF2025

OMO.#: OMO-TGF2025

RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05

RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2023-2-01

Mfr.#: TGF2023-2-01

OMO.#: OMO-TGF2023-2-01-318

RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
TGF2021-01

Mfr.#: TGF2021-01

OMO.#: OMO-TGF2021-01-318

RF JFET Transistors DC-12GHz 1mm Pwr pHEMT (0.35um)
TGF2021-04-SD-T/R

Mfr.#: TGF2021-04-SD-T/R

OMO.#: OMO-TGF2021-04-SD-T-R-1190

New and Original
TGF2021-04-SD.

Mfr.#: TGF2021-04-SD.

OMO.#: OMO-TGF2021-04-SD--1190

New and Original
TGF2021-04-SG

Mfr.#: TGF2021-04-SG

OMO.#: OMO-TGF2021-04-SG-1152

RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 4 dBm
TGF2022-2

Mfr.#: TGF2022-2

OMO.#: OMO-TGF2022-2-1190

New and Original
TGF2023-10

Mfr.#: TGF2023-10

OMO.#: OMO-TGF2023-10-1152

RF JFET Transistors 10mm GaN Discrete
TGF2023-20

Mfr.#: TGF2023-20

OMO.#: OMO-TGF2023-20-1152

RF JFET Transistors 20mm GaN Discrete
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of TGF2023-2-20 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
50
$147.83
$7 391.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Top