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IDW10G65C5XKSA1

IDW10G65C5XKSA1
Mfr. #:
IDW10G65C5XKSA1
Manufacturer:
Infineon Technologies
Description:
Schottky Diodes & Rectifiers SIC DIODES
Lifecycle:
New from this manufacturer.
Datasheet:
IDW10G65C5XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IDW10G65C5XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
Schottky Diodes & Rectifiers
RoHS:
Y
Product:
Schottky Silicon Carbide Diodes
Mounting Style:
Through Hole
Package / Case:
TO-247-3
If - Forward Current:
10 A
Vrrm - Repetitive Reverse Voltage:
650 V
Vf - Forward Voltage:
1.5 V
Ifsm - Forward Surge Current:
58 A
Configuration:
Single
Technology:
SiC
Ir - Reverse Current:
0.5 uA
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
CoolSiC
Packaging:
Tube
Brand:
Infineon Technologies
Pd - Power Dissipation:
65 W
Product Type:
Schottky Diodes & Rectifiers
Factory Pack Quantity:
240
Subcategory:
Diodes & Rectifiers
Tradename:
CoolSiC
Vr - Reverse Voltage:
650 V
Part # Aliases:
IDW10G65C5 SP001633164
Unit Weight:
0.211644 oz
Tags
IDW10G6, IDW10G, IDW10, IDW1, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
Diode Silicon Carbide Schottky 65 V 1A (DC) Through Hole PG-TO247-3-41
***ow.cn
Diode Schottky SiC 650V 10A 3-Pin(3+Tab) TO-247 Tube
***i-Key
DIODE SIL CARB 650V 10A TO247-3
*** Electronic Components
Schottky Diodes & Rectifiers SIC DIODES
***ineon SCT
CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes, PG-TO247-3, RoHS
***ineon
CoolSiC generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC Generation 5 has been designed to complement our 650V CoolMOS families: this ensures meeting the most stringent application requirements in this voltage range. | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Part # Mfg. Description Stock Price
IDW10G65C5XKSA1
DISTI # V36:1790_17076625		Infineon Technologies AG650V SiC Schottky Diode0
  • 240000:$2.2940
  • 120000:$2.2990
  • 24000:$3.0800
  • 2400:$4.7200
  • 240:$5.0100
IDW10G65C5XKSA1
DISTI # IDW10G65C5XKSA1-ND		Infineon Technologies AGDIODE SCHOTTKY 650V 10A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		480In Stock
  • 2640:$2.5172
  • 720:$3.1417
  • 240:$3.6906
  • 25:$4.2584
  • 10:$4.5040
  • 1:$5.0200
IDW10G65C5XKSA1
DISTI # SP001633164		Infineon Technologies AGSIC DIODES (Alt: SP001633164)
RoHS: Compliant
Min Qty: 1		Europe - 1127
  • 1000:€2.0900
  • 500:€2.1900
  • 100:€2.2900
  • 50:€2.3900
  • 25:€2.4900
  • 10:€2.5900
  • 1:€2.7900
IDW10G65C5XKSA1
DISTI # IDW10G65C5XKSA1		Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDW10G65C5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.3900
  • 2400:$2.3900
  • 960:$2.4900
  • 480:$2.5900
  • 240:$2.6900
IDW10G65C5XKSA1
DISTI # 726-IDW10G65C5XKSA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant		445
  • 1:$5.0100
  • 10:$4.2500
  • 100:$3.6900
  • 250:$3.5000
  • 500:$3.1400
IDW10G65C5XKSA1
DISTI # XSKDRABV0030553		Infineon Technologies AG 
RoHS: Compliant		467 in Stock0 on Order
  • 467:$3.3200
  • 240:$3.5500
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Availability
Stock:
445
On Order:
2428
Enter Quantity:
Current price of IDW10G65C5XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.01
$5.01
10
$4.25
$42.50
100
$3.69
$369.00
250
$3.50
$875.00
500
$3.14
$1 570.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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