CSD86330Q3D

CSD86330Q3D
Mfr. #:
CSD86330Q3D
Description:
MOSFET Sync Buck NexFET Pwr Block MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
CSD86330Q3D Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
CSD86330Q3D more Information CSD86330Q3D Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
LSON-CLIP-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
4.5 A
Vgs th - Gate-Source Threshold Voltage:
900 mV
Vgs - Gate-Source Voltage:
5 V
Qg - Gate Charge:
4.8 nC, 9.2 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
6 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
NexFET
Packaging:
Reel
Height:
1.5 mm
Length:
3.3 mm
Series:
CSD86330Q3D
Transistor Type:
2 N-Channel
Width:
3.3 mm
Brand:
Texas Instruments
Forward Transconductance - Min:
52 S, 82 S
Development Kit:
CSD86330EVM-717, TPS40322EVM-679
Fall Time:
1.9 ns, 4.2 ns
Product Type:
MOSFET
Rise Time:
7.5 ns, 6.3 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
8.5 ns, 15.8 ns
Typical Turn-On Delay Time:
4.9 ns, 5.3 ns
Unit Weight:
0.002254 oz
Tags
CSD86330Q, CSD86330, CSD8633, CSD86, CSD8, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
TEXAS INSTRUMENTS CSD86330Q3D Dual MOSFET, Dual N Channel, 20 A, 25 V, 4.6 ohm, 4.5 V, 1.4 V
***ment14 APAC
IC, SYNC, BUCK, NEXFET, 8SON; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Source Voltage Vds:25V; On Resistance
***nell
IC, SYNC, BUCK, NEXFET, 8SON; Polarité transistor: Double canal N; Courant de drain Id: 20A; Tension Vds max..: 25V; Résistance Rds(on): 4.6ohm; Tension, mesure Rds: 4.5V; Tension de seuil Vgs: 1.4V; Dissipation de puissance P
***ser
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***ical
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***icroelectronics
N-channel 24V - 0.005Ohm - 21A - PolarPAK®
***ponent Stockers USA
21 A 25 V 0.008 ohm N-CHANNEL Si POWER MOSFET
***r Electronics
Power Field-Effect Transistor, 21A I(D), 25V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
Single N-Channel 25 V 13.4 mOhm 12 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ark
TAPE AND REEL / MOSFET, 25V,A, 7.4mOhm, 7.3nC, PQFN3.3x3.3 single
***p One Stop
Trans MOSFET N-CH 25V 16A 8-Pin QFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 4.1C/W); Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET
***emi
N-Channel Power Trench® MOSFET 25V, 7.5mΩ
***nell
MOSFET, N CH, 25V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:27W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
• This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***Yang
25/20V NCH POWER TRENCH MOSFET - Bulk
***i-Key Marketplace
MOSFET N-CH 25V 16.5A/30A DPAK
*** Electronic Components
MOSFET 25V N-Channel PowerTrench
***ure Electronics
N-Channel 25 V 8.6 mOhm Surface Mount PowerTrench Mosfet - TO-252-3
*** Stop Electro
Power Field-Effect Transistor, 16.4A I(D), 25V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***Yang
N-Channel 25V 17.7A (Ta), 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount D-PAK (TO-252AA) - Bulk
*** Electronic Components
MOSFET 25V 30A N-Channel PowerTrench
***i-Key Marketplace
MOSFET N-CH 25V 17.7A/30A DPAK
***as Instr.
The CSD86330Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high frequency capability in a small 3.3 mm × 3.3 mm outline. Optimized for 5 V gate drive applications, this product offers a flexible solution capable of offering a high density power supply when paired with any 5 V gate drive from an external controller/driver.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Power Block TI NexFET
NexFET Power Block ICs
OMO Electronic NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs which improves power density. With ultra-low Qg & Qgd these devices enable a higher switching frequency with up to double frequency for same power loss versus competitor's devices. This provides improved transient response for less output capacitors that will be needed. There is a reduction in size, by up to 1/2, for the output filter (caps & inductor). They come with a unique ground pad lead frame and pinout which simplifies the customers layout and improves operating and thermal performance.
Part # Description Stock Price
CSD86330Q3D
DISTI # V98:2334_07248905
Synchronous Buck Power Block 8-Pin SON EP T/R
RoHS: Compliant
788
  • 500:$1.0609
  • 250:$1.1976
  • 100:$1.1984
  • 25:$1.4751
  • 10:$1.4766
  • 1:$1.7190
CSD86330Q3D
DISTI # 296-28216-1-ND
MOSFET 2N-CH 25V 20A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
21266In Stock
  • 1000:$1.0186
  • 500:$1.2293
  • 100:$1.5805
  • 10:$1.9670
  • 1:$2.1800
CSD86330Q3D
DISTI # 296-28216-6-ND
MOSFET 2N-CH 25V 20A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
21266In Stock
  • 1000:$1.0186
  • 500:$1.2293
  • 100:$1.5805
  • 10:$1.9670
  • 1:$2.1800
CSD86330Q3D
DISTI # 296-28216-2-ND
MOSFET 2N-CH 25V 20A 8SON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
17500In Stock
  • 5000:$0.8866
  • 2500:$0.9207
CSD86330EVM-717
DISTI # 296-30851-ND
EVAL MODULE FOR CSD86330Q3D
RoHS: Not compliant
Min Qty: 1
Container: Box
1In Stock
  • 1:$50.8800
CSD86330Q3D
DISTI # 30729769
Synchronous Buck Power Block 8-Pin SON EP T/R
RoHS: Compliant
788
  • 500:$1.0609
  • 250:$1.1976
  • 100:$1.1984
  • 25:$1.4751
  • 10:$1.4766
  • 9:$1.7190
CSD86330Q3D
DISTI # CSD86330Q3D
Synchronous Buck NexFET Power Block 8-Pin SON EP T/R (Alt: CSD86330Q3D)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 2500
  • 2500:€1.0409
  • 5000:€0.9219
  • 10000:€0.8249
  • 15000:€0.7849
  • 25000:€0.7479
CSD86330Q3D
DISTI # CSD86330Q3D
Synchronous Buck NexFET Power Block 8-Pin SON EP T/R - Tape and Reel (Alt: CSD86330Q3D)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Asia - 0
    CSD86330Q3D
    DISTI # CSD86330Q3D
    Synchronous Buck NexFET Power Block 8-Pin SON EP T/R - Tape and Reel (Alt: CSD86330Q3D)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.8989
    • 5000:$0.8559
    • 10000:$0.8269
    • 15000:$0.7999
    • 25000:$0.7769
    CSD86330Q3D
    DISTI # 58T9140
    IC, SYNC, BUCK, NEXFET, 8SON,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:25V,On Resistance Rds(on):4.6ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.4V,Power , RoHS Compliant: Yes0
      CSD86330Q3DSynchronous Buck NexFET&#153,Power Block MOSFET Pair3807
      • 1000:$0.7000
      • 750:$0.7700
      • 500:$0.9400
      • 250:$1.1200
      • 100:$1.2100
      • 25:$1.3900
      • 10:$1.4900
      • 1:$1.6700
      CSD86330Q3D
      DISTI # 595-CSD86330Q3D
      MOSFET Sync Buck NexFET Pwr Block MOSFET
      RoHS: Compliant
      1727
      • 1:$1.8300
      • 10:$1.5500
      • 100:$1.2400
      • 500:$1.0900
      • 1000:$0.8990
      • 2500:$0.8370
      CSD86330Q3DBuffer/Inverter Based MOSFET Driver, PDSO8
      RoHS: Compliant
      792
      • 1000:$0.9100
      • 500:$0.9600
      • 100:$1.0000
      • 25:$1.0400
      • 1:$1.1200
      CSD86330Q3D
      DISTI # C1S746202446117
      Synchronous Buck Power Block 8-Pin SON EP T/R
      RoHS: Compliant
      788
      • 250:$1.1976
      • 100:$1.1984
      • 25:$1.4751
      • 10:$1.4766
      CSD86330Q3D
      DISTI # C1S746202106495
      Synchronous Buck Power Block 8-Pin SON EP T/R
      RoHS: Compliant
      788
      • 2500:$0.9207
      CSD86330Q3D
      DISTI # 1972453
      IC, SYNC, BUCK, NEXFET, 8SON
      RoHS: Compliant
      0
      • 1:$2.9000
      • 10:$2.4600
      • 100:$1.9700
      • 500:$1.7300
      • 1000:$1.4200
      • 2500:$1.3300
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      Availability
      Stock:
      16
      On Order:
      1999
      Enter Quantity:
      Current price of CSD86330Q3D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.83
      $1.83
      10
      $1.55
      $15.50
      100
      $1.24
      $124.00
      500
      $1.08
      $540.00
      1000
      $0.90
      $899.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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