IPG20N10S4L22ATMA1

IPG20N10S4L22ATMA1
Mfr. #:
IPG20N10S4L22ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPG20N10S4L22ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPG20N10S4L22ATMA1 DatasheetIPG20N10S4L22ATMA1 Datasheet (P4-P6)IPG20N10S4L22ATMA1 Datasheet (P7-P9)
ECAD Model:
More Information:
IPG20N10S4L22ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
20 A
Rds On - Drain-Source Resistance:
20 mOhms, 20 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
27 nC, 27 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
60 W
Configuration:
Dual
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
IPG20N10
Transistor Type:
2 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Fall Time:
18 ns, 18 ns
Product Type:
MOSFET
Rise Time:
3 ns, 3 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 ns, 30 ns
Typical Turn-On Delay Time:
5 ns, 5 ns
Part # Aliases:
IPG20N10S4L-22 IPG2N1S4L22XT SP000866570
Unit Weight:
0.003439 oz
Tags
IPG20N10S4L, IPG20N1, IPG20, IPG2, IPG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
***et
Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R
***et Europe
Trans MOSFET N-CH 100V 20A 8-Pin TDSON T/R
***ronik
N-CH 100V 22mOhm 20A SON-8
***i-Key
MOSFET 2N-CH 8TDSON
***ark
Mosfet, Aec-Q101, Dual N-Ch, Tdson-8; Transistor Polarity:dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.02Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, DUAL N-CH, TDSON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:60W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, DOPPIO CA-N TDSON-8; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:20A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.02ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; Solenoid control; LED and Body lighting
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Inductive Wireless Charging – In-Car Charging
Infineon Technologies Inductive Wireless Charging – In-Car Charging allows for placing devices in a designated area to charge without a wired connection. Automotive inductive wireless charging is growing in the latest generation of cars. In fact, it’s predicted that most cars will have the feature in the very near future.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Part # Mfg. Description Stock Price
IPG20N10S4L22ATMA1
DISTI # V72:2272_06384464
Infineon Technologies AGTrans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
2287
  • 1000:$0.9685
  • 500:$1.1297
  • 250:$1.2740
  • 100:$1.2791
  • 25:$1.4386
  • 10:$1.5984
  • 1:$2.0691
IPG20N10S4L22ATMA1
DISTI # V36:1790_06384464
Infineon Technologies AGTrans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
0
  • 5000000:$0.7534
  • 2500000:$0.7538
  • 500000:$0.7945
  • 50000:$0.8701
  • 5000:$0.8829
IPG20N10S4L22ATMA1
DISTI # IPG20N10S4L22ATMA1CT-ND
Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
9945In Stock
  • 1000:$0.8452
  • 500:$1.0201
  • 100:$1.2416
  • 10:$1.5450
  • 1:$1.7200
IPG20N10S4L22ATMA1
DISTI # IPG20N10S4L22ATMA1DKR-ND
Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
9945In Stock
  • 1000:$0.8452
  • 500:$1.0201
  • 100:$1.2416
  • 10:$1.5450
  • 1:$1.7200
IPG20N10S4L22ATMA1
DISTI # IPG20N10S4L22ATMA1TR-ND
Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 10000:$0.7169
  • 5000:$0.7357
IPG20N10S4L22ATMA1
DISTI # 33356300
Infineon Technologies AGTrans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.6890
IPG20N10S4L22ATMA1
DISTI # 32346972
Infineon Technologies AGTrans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
2287
  • 9:$2.0691
IPG20N10S4L22ATMA1
DISTI # SP000866570
Infineon Technologies AGTrans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R (Alt: SP000866570)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 370836
    IPG20N10S4L22ATMA1
    DISTI # IPG20N10S4L22ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R - Tape and Reel (Alt: IPG20N10S4L22ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 50000:$0.6839
    • 30000:$0.6969
    • 20000:$0.7209
    • 10000:$0.7479
    • 5000:$0.7759
    IPG20N10S4L22ATMA1
    DISTI # 13AC9059
    Infineon Technologies AGMOSFET, AEC-Q101, DUAL N-CH, TDSON-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes14195
    • 1000:$0.7900
    • 500:$0.9530
    • 250:$1.0200
    • 100:$1.0800
    • 50:$1.1700
    • 25:$1.2600
    • 10:$1.3500
    • 1:$1.6000
    IPG20N10S4L-22
    DISTI # 726-IPG20N10S4L-22
    Infineon Technologies AGMOSFET MOSFET
    RoHS: Compliant
    12537
    • 1:$1.5800
    • 10:$1.3400
    • 100:$1.0700
    • 500:$0.9440
    • 1000:$0.7820
    • 2500:$0.7280
    • 5000:$0.7010
    • 10000:$0.6740
    IPG20N10S4L22ATMA1
    DISTI # 726-IPG20N10S4L22ATM
    Infineon Technologies AGMOSFET MOSFET
    RoHS: Compliant
    4657
    • 1:$1.5800
    • 10:$1.3400
    • 100:$1.0700
    • 500:$0.9440
    • 1000:$0.7820
    • 2500:$0.7280
    • 5000:$0.7010
    • 10000:$0.6740
    IPG20N10S4L22ATMA1
    DISTI # 2725857
    Infineon Technologies AGMOSFET, AEC-Q101, DUAL N-CH, TDSON-8
    RoHS: Compliant
    14118
    • 100:$1.8800
    • 10:$2.3300
    • 1:$2.5900
    IPG20N10S4L22ATMA1
    DISTI # 2725857
    Infineon Technologies AGMOSFET, AEC-Q101, DUAL N-CH, TDSON-819449
    • 500:£0.7340
    • 250:£0.7830
    • 100:£0.8320
    • 10:£1.0900
    • 1:£1.4100
    IPG20N10S4L22ATMA1
    DISTI # XSKDRABV0052041
    Infineon Technologies AG 
    RoHS: Compliant
    125836 in Stock0 on Order
    • 125836:$0.9640
    • 5000:$1.0300
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    Availability
    Stock:
    Available
    On Order:
    1987
    Enter Quantity:
    Current price of IPG20N10S4L22ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.58
    $1.58
    10
    $1.34
    $13.40
    100
    $1.07
    $107.00
    500
    $0.94
    $472.00
    1000
    $0.78
    $782.00
    2500
    $0.73
    $1 820.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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