HN1B04FE-GR,LF

Mfr. #:: HN1B04FE-GR,LF
Manufacturer:: Toshiba
Description:: Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Lifecycle:: New from this manufacturer.
Datasheet:: HN1B04FE-GR,LF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: HN1B04FE-GR,LF Datasheet HN1B04FE-GR,LF Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-563-6

Transistor Polarity:: NPN, PNP

Configuration:: Dual

Collector- Emitter Voltage VCEO Max:: 50 V

Collector- Base Voltage VCBO:: 60 V, - 50 V

Emitter- Base Voltage VEBO:: 5 V

Collector-Emitter Saturation Voltage:: 100 mV

Maximum DC Collector Current:: 150 mA

Gain Bandwidth Product fT:: 80 MHz, 80 MHz

Maximum Operating Temperature:: + 150 C

Series:: HN1B04

DC Current Gain hFE Max:: 400

Packaging:: Reel

Brand:: Toshiba

DC Collector/Base Gain hfe Min:: 120

Pd - Power Dissipation:: 100 mW

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 4000

Subcategory:: Transistors

Unit Weight:: 0.000106 oz

Tags: HN1B04FE-GR, HN1B04FE-G, HN1B04FE, HN1B04, HN1B0, HN1B, HN1

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HN1B04FE-GR,LF Description

***i-Key: TRANS NPN/PNP 50V 0.15A ES6

***enic: 50V 100mW 150mA 200@2mA,6V 80MHz 100mV@100mA,10mA 1 NPN,1 PNP +150¡æ@(Tj) SOT-666 Bipolar Transistors - BJT ROHS

***el Electronic: IC OPAMP CUR SENS 1.6MHZ SOT23-6

***ical: Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23

***el Electronic: SMCJ Series 38.9 V 1.5 kW Surface Mount Uni-Directional TVS Diode - DO-214AB

***enic: 30nA 50V 320mW 150mA 290@2mA,5V 100MHz 170mV@100mA,5mA NPN +150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS

***or: X34 PB-F SOT-23 TRANSISTOR FOR L

***-Wing Technology: Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 180 @ 1mA 6V 150mA 150mW 100MHz

***ical: Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R

***peria: 2PC4617 - NPN general-purpose transistor

***ment14 APAC: TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:180; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose

***-Wing Technology: Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz

***p One Stop: Trans GP BJT PNP 50V 0.15A Automotive 3-Pin SC-75 T/R

***peria: 2PA1774 - PNP general-purpose transistor

*** Americas: PNP transistor in a SOT416 (SC-75) plastic package

***-Wing Technology: Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz

***p One Stop: Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R

***peria: 2PC4617 - NPN general-purpose transistor

***ment14 APAC: TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:120; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose

***et: Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini Embossed T/R

***enic: 50V 150mW 150mA 70@2mA,6V 80MHz 100mV@100mA,10mA PNP +125¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS

***: TRANS S-MINI PLN

*** Source Electronics: Trans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R / TRANS NPN 50V 0.15A VESM

***enic: 50V 150mW 150mA 200@2mA,6V 60MHz 150mV@100mA,10mA NPN +150¡æ@(Tj) SOT-723 Bipolar Transistors - BJT ROHS

***: VESM PLN ACTIVE

Market price

Part #	Mfg.	Description	Stock	Price
HN1B04FE-GR,LF DISTI # V36:1790_13897437	Toshiba America Electronic Components	X34 PB-F ES6 PLN (LF) TRANSIST	0	2000000:$0.0267 400000:$0.0343 40000:$0.0503 4000:$0.0531
HN1B04FE-GR,LF DISTI # HN1B04FE-GRLFCT-ND	Toshiba America Electronic Components	TRANS NPN/PNP 50V 0.15A ES6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	15926In Stock	1000:$0.0607 500:$0.0892 250:$0.1047 100:$0.1666 25:$0.2140 10:$0.2970 1:$0.3300
HN1B04FE-GR,LF DISTI # HN1B04FE-GRLFDKR-ND	Toshiba America Electronic Components	TRANS NPN/PNP 50V 0.15A ES6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	15926In Stock	1000:$0.0607 500:$0.0892 250:$0.1047 100:$0.1666 25:$0.2140 10:$0.2970 1:$0.3300
HN1B04FE-GR,LF DISTI # HN1B04FE-GRLFTR-ND	Toshiba America Electronic Components	TRANS NPN/PNP 50V 0.15A ES6 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	8000In Stock	100000:$0.0308 28000:$0.0370 12000:$0.0393 8000:$0.0462 4000:$0.0531
HN1B04FE-GRLF DISTI # HN1B04FE-GR,LF	Toshiba America Electronic Components	Trans GP BJT NPN/PNP 50V 0.15A 6-Pin SC-107C Emboss T/R - Tape and Reel (Alt: HN1B04FE-GR,LF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	40000:$0.0282 24000:$0.0290 16000:$0.0306 8000:$0.0324 4000:$0.0345
HN1B04FE-GR,LF DISTI # 757-HN1B04FEGRLF	Toshiba America Electronic Components	Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp RoHS: Compliant	15840	1:$0.3200 10:$0.2040 100:$0.0850 1000:$0.0580 4000:$0.0440 8000:$0.0380 24000:$0.0360 48000:$0.0330 100000:$0.0290
HN1B04FE-GR,LF(B	Toshiba America Electronic Components		3200	1668:$0.1600 140:$0.2400 1:$0.8000
HN1B04FE-GRLF	Toshiba America Electronic Components	Bipolar Transistors - BJTES6 PLN (LF) TRANSISTOR RoHS: Compliant	Americas -
HN1B04FE-GR,LF	Toshiba America Electronic Components	Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp RoHS: Compliant	Americas -

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HN1B04FE-GR,LF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes