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IRGB20B60PD1PBF

IRGB20B60PD1PBF
Mfr. #:
IRGB20B60PD1PBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V Warp2 150kHz
Lifecycle:
New from this manufacturer.
Datasheet:
IRGB20B60PD1PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGB20B60PD1PBF DatasheetIRGB20B60PD1PBF Datasheet (P4-P6)IRGB20B60PD1PBF Datasheet (P7-P9)IRGB20B60PD1PBF Datasheet (P10-P11)
ECAD Model:
More Information:
IRGB20B60PD1PBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-220-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
2.05 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
40 A
Pd - Power Dissipation:
215 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tube
Continuous Collector Current Ic Max:
40 A
Height:
8.77 mm
Length:
10.54 mm
Width:
4.69 mm
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
1000
Subcategory:
IGBTs
Part # Aliases:
SP001548090
Unit Weight:
0.211644 oz
Tags
IRGB20B60PD1, IRGB2, IRGB, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
IRGB20B60PD1PBF Series 600 V 22 A N-Channel UltraFast IGBT - TO-220AB, TO220COPAK-3, RoHS
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB
*** Stop Electro
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, 600V, 40A, TO-220AB; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-220AB; Power Dissipation Max:215W; Power Dissipation Pd:215W; Power Dissipation Pd:215W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40WPBF Series 600 V 20 A N-Channel Latest Generation IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
*** Stop Electro
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Fall Time Max:74ns; Fall Time tf:74ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Electronics
IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB
***p One Stop
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
***itex
Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220
***roFlash
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3+Tab) TO-220AB
***ure Electronics
IRG4BC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-220AB
***ineon SCT
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 170 ns Power dissipation: 160 W
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Source Electronics
Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB
***ure Electronics
HGTP7N60A4 Series 600 V 34 A Flange Mount SMPS N-Channel IGBT-TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Part # Mfg. Description Stock Price
IRGB20B60PD1PBF
DISTI # IRGB20B60PD1PBF-ND		Infineon Technologies AGIGBT 600V 40A 215W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1458In Stock
  • 1000:$1.7267
  • 500:$2.0473
  • 100:$2.4050
  • 10:$2.9350
  • 1:$3.2700
IRGB20B60PD1PBF
DISTI # IRGB20B60PD1PBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRGB20B60PD1PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 187
  • 1:$2.0900
  • 10:$1.8900
  • 25:$1.8900
  • 50:$1.8900
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.3900
IRGB20B60PD1PBF
DISTI # SP001548090		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB (Alt: SP001548090)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.7900
  • 10:€1.5900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.2900
  • 500:€1.2900
  • 1000:€1.1900
IRGB20B60PD1PBF
DISTI # 63J7440		Infineon Technologies AGSINGLE IGBT, 600V, 40A,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:215W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes115
  • 500:$1.9500
  • 250:$2.1800
  • 100:$2.3000
  • 50:$2.4200
  • 25:$2.5300
  • 10:$2.6500
  • 1:$3.1100
IRGB20B60PD1PBF.
DISTI # 29AC7086		Infineon Technologies AGINDUSTRY 59 ROHS COMPLIANT: YES0
  • 500:$1.9500
  • 250:$2.1800
  • 100:$2.3000
  • 50:$2.4200
  • 25:$2.5800
  • 10:$2.7000
  • 1:$3.1700
IRGB20B60PD1PBF
DISTI # 70017558		Infineon Technologies AGIGBT with Ultrafast Soft Recovery Diode,600 V,13 A,TO-220AB
RoHS: Compliant		0
  • 5:$5.2500
IRGB20B60PD1PBFInfineon Technologies AGIRGB20B60PD1PBF Series 600 V 22 A N-Channel UltraFast IGBT - TO-220AB
RoHS: Compliant		3075Tube
  • 10:$1.9500
  • 300:$1.7100
IRGB20B60PD1PBF
DISTI # 942-IRGB20B60PD1PBF		Infineon Technologies AGIGBT Transistors 600V Warp2 150kHz
RoHS: Compliant		1695
  • 1:$3.1100
  • 10:$2.6500
  • 100:$2.3000
  • 250:$2.1800
  • 500:$1.9500
  • 1000:$1.6500
IRGB20B60PD1PBFInternational Rectifier 42
  • 26:$2.7800
  • 8:$3.0580
  • 1:$4.1700
IRGB20B60PD1PBF
DISTI # 6503533		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 40A TO220AB, PK780
  • 25:£1.9660
  • 5:£2.1860
IRGB20B60PD1PBF
DISTI # IRGB20B60PD1PBF		Infineon Technologies AGTransistor: IGBT,600V,40A,215W,TO220AB56
  • 1:$4.1700
  • 3:$3.7400
  • 10:$3.1000
  • 50:$2.6500
IRGB20B60PD1PBF
DISTI # 8659583		Infineon Technologies AGIGBT, 600V, 40A, TO-220AB
RoHS: Compliant		913
  • 1000:$2.6200
  • 500:$3.0900
  • 250:$3.4600
  • 100:$3.6500
  • 10:$4.1900
  • 1:$4.9300
IRGB20B60PD1PBF
DISTI # 8659583		Infineon Technologies AGIGBT, 600V, 40A, TO-220AB
RoHS: Compliant		853
  • 500:£1.2900
  • 250:£1.4400
  • 100:£1.6000
  • 10:£1.7500
  • 1:£2.2300
IRGB20B60PD1PBF
DISTI # XSFP00000050570		Infineon Technologies AG 
RoHS: Compliant		2500
  • 2500:$2.4400
  • 100:$2.6000
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Availability
Stock:
832
On Order:
2815
Enter Quantity:
Current price of IRGB20B60PD1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.11
$3.11
10
$2.64
$26.40
100
$2.29
$229.00
250
$2.17
$542.50
500
$1.95
$975.00
1000
$1.64
$1 640.00
2000
$1.56
$3 120.00
5000
$1.50
$7 500.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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