IKW50N65F5

Mfr. #:: IKW50N65F5
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: IKW50N65F5 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IKW50N65F5 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.6 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 80 A

Pd - Power Dissipation:: 305 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: TRENCHSTOP 5 F5

Packaging:: Tube

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 240

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IKW50N65F5FKSA1 SP000973420

Tags: IKW50N65F, IKW50N65, IKW50N6, IKW50N, IKW5, IKW

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKW50N65F5 More Information

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 F5 Discrete IGBTs: Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.

Market price

Part #	Mfg.	Description	Stock	Price
IKW50N65F5FKSA1 DISTI # V99:2348_06378386	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	240	1:$2.8005
IKW50N65F5FKSA1 DISTI # V36:1790_06378386	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0	240000:$2.5310 120000:$2.5340 24000:$2.7590 2400:$3.1410 240:$3.2040
IKW50N65F5FKSA1 DISTI # IKW50N65F5FKSA1-ND	Infineon Technologies AG	IGBT 650V 80A 305W PG-TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	2640:$2.5351 720:$3.1562 240:$3.7076 25:$4.2780 10:$4.5250 1:$5.0400
IKW50N65F5AXKSA1 DISTI # IKW50N65F5AXKSA1-ND	Infineon Technologies AG	IGBT 650V 80A 305W PG-TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call	240:$5.9958
IKW50N65F5 DISTI # 30885476	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 RoHS: Compliant	1910	4:$7.4750
IKW50N65F5FKSA1 DISTI # 33951246	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	240	3:$2.8005
IKW50N65F5FKSA1 DISTI # 33145366	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	60	5:$2.1373
IKW50N65F5 DISTI # IKW50N65F5	Infineon Technologies AG	- Bulk (Alt: IKW50N65F5) RoHS: Compliant Min Qty: 161 Container: Bulk	Americas - 0	1610:$2.1900 805:$2.2900 483:$2.3900 322:$2.4900 161:$2.5900
IKW50N65F5FKSA1 DISTI # IKW50N65F5FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW50N65F5FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$2.2900 2400:$2.2900 960:$2.3900 480:$2.4900 240:$2.5900
IKW50N65F5FKSA1 DISTI # IKW50N65F5	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: IKW50N65F5) RoHS: Compliant Min Qty: 240 Container: Tube	Asia - 0
IKW50N65F5FKSA1 DISTI # SP000973420	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP000973420) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	50:€1.9900 100:€1.9900 500:€1.9900 1000:€1.9900 25:€2.0900 1:€2.1900 10:€2.1900
IKW50N65F5AXKSA1 DISTI # IKW50N65F5AXKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW50N65F5AXKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$3.9900 1440:$4.0900 960:$4.1900 480:$4.3900 240:$4.5900
IKW50N65F5FKSA1 DISTI # 33X0415	Infineon Technologies AG	IGBT, 650V, 80A, 175DEG C, 305W, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:305W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,MSL:- RoHS Compliant: Yes	130	100:$4.5700 50:$4.7800 25:$5.0000 10:$5.2100 1:$6.0600
IKW50N65F5FKSA1 DISTI # 726-IKW50N65F5FKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	125	1:$4.7900 10:$4.0700 100:$3.5300 250:$3.3500 500:$3.0000
IKW50N65F5 DISTI # 726-IKW50N65F5-ES	Infineon Technologies AG	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS: Compliant	0	240:$3.5300 480:$3.3500 720:$3.0000
IKW50N65F5AXKSA1 DISTI # 726-IKW50N65F5AXKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS	0
IKW50N65F5	Infineon Technologies AG	Insulated Gate Bipolar Transistor RoHS: Compliant	20	1000:$2.3800 500:$2.5100 100:$2.6100 25:$2.7200 1:$2.9300
IKW50N65F5FKSA1 DISTI # 1109112P	Infineon Technologies AG	IGBT TRENCHSTOP N-CHANNEL 650V 50A TO247, TU	2	200:£2.3680 80:£2.5950 40:£2.7150 8:£2.9880
IKW50N65F5FKSA1 DISTI # IKW50N65F5FKSA1	Infineon Technologies AG	Transistor: IGBT,650V,80A,305W,TO247-3,Series: F5	220	30:$2.6900 10:$2.8900 3:$3.2200 1:$3.6400
IKW50N65F5FKSA1 DISTI # 2363295	Infineon Technologies AG	IGBT, 650V, 50A, TO247-3	0	500:£2.3400 250:£2.6100 100:£2.7400 10:£3.1600 1:£4.1500
IKW50N65F5	Infineon Technologies AG		30	1:¥30.0000
IKW50N65F5FKSA1 DISTI # IKW50N65F5	Infineon Technologies AG	650V 80A 305W TO247 RoHS: Compliant	150	1:€5.9000 10:€2.9000 50:€1.9000 100:€1.8300

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Availability

Stock:: Available
On Order:: 4000
Enter Quantity:

Current price of IKW50N65F5 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

240: ~~$3.53~~; ~~$847.20~~

480: ~~$3.35~~; ~~$1 608.00~~

720: ~~$3.00~~; ~~$2 160.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IKW50N65F5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes