IGO60R070D1AUMA1

Mfr. #:: IGO60R070D1AUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET 600V CoolGaN Power Transistor
Lifecycle:: New from this manufacturer.
Datasheet:: IGO60R070D1AUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IGO60R070D1AUMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: GaN

Mounting Style:: SMD/SMT

Package / Case:: PG-DSO-20

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 31 A

Rds On - Drain-Source Resistance:: 70 mOhms

Vgs th - Gate-Source Threshold Voltage:: 0.9 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 5.8 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 125 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolGaN

Packaging:: Reel

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Fall Time:: 10 ns

Moisture Sensitive:: Yes

Product Type:: MOSFET

Rise Time:: 7 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 11 ns

Typical Turn-On Delay Time:: 13 ns

Part # Aliases:: SP001300362

Tags: IGO

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGO60R070D1AUMA1 More Information

CoolGaN™ Gallium Nitride HEMTs: Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.

Market price

Part #	Mfg.	Description	Stock	Price
IGO60R070D1AUMA1 DISTI # V72:2272_22710690	Infineon Technologies AG	IGO60R070D1AUMA1	0
IGO60R070D1AUMA1 DISTI # V36:1790_22710690	Infineon Technologies AG	IGO60R070D1AUMA1	0	400000:$13.6900 80000:$14.6300 8000:$16.6600 800:$17.0200
IGO60R070D1AUMA1 DISTI # IGO60R070D1AUMA1CT-ND	Infineon Technologies AG	IC GAN FET 600V 60A 20DSO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	716In Stock	100:$19.3136 10:$22.6170 1:$24.5200
IGO60R070D1AUMA1 DISTI # IGO60R070D1AUMA1DKR-ND	Infineon Technologies AG	IC GAN FET 600V 60A 20DSO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	716In Stock	100:$19.3136 10:$22.6170 1:$24.5200
IGO60R070D1AUMA1 DISTI # IGO60R070D1AUMA1TR-ND	Infineon Technologies AG	IC GAN FET 600V 60A 20DSO RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	800:$17.0240
IGO60R070D1AUMA1 DISTI # SP001300362	Infineon Technologies AG	Trans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R (Alt: SP001300362) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 100	8000:€13.6900 4800:€14.2900 3200:€15.0900 1600:€15.2900 800:€15.6900
IGO60R070D1AUMA1/SAMPLE DISTI # IGO60R070D1AUMA1/SAMPLE	Infineon Technologies AG	Transistor MOSFET Enhancement Mode 600V 20-Pin DSO - Trays (Alt: IGO60R070D1AUMA1/SAMPLE) RoHS: Compliant Min Qty: 800 Container: Tray	Americas - 5
IGO60R070D1AUMA1 DISTI # IGO60R070D1AUMA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R - Tape and Reel (Alt: IGO60R070D1AUMA1) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	8000:$14.8900 4800:$15.0900 3200:$15.6900 1600:$16.2900 800:$16.8900
IGO60R070D1AUMA1 DISTI # 84AC1770	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes	974	500:$16.3800 250:$17.2100 100:$18.0400 50:$19.1100 25:$20.1800 10:$21.1300 1:$22.9100
IGO60R070D1AUMA1 DISTI # 726-IGO60R070D1AUMA1	Infineon Technologies AG	MOSFET 600V CoolGaN Power Transistor RoHS: Compliant	0	1:$22.6800 5:$22.4400 10:$20.9200 25:$19.9800 100:$17.8600 250:$17.0400 500:$16.2200 800:$14.1000
IGO60R070D1AUMA1 DISTI # IGO60R070D1AUMA1	Infineon Technologies AG	Transistor: N-JFET,CoolGaN™,unipolar,600V,31A,Idm:60A,125W	5	10:$22.5500 3:$25.5900 1:$28.4100
IGO60R070D1AUMA1 DISTI # 2981531	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, 150DEG C, 125W RoHS: Compliant	974	800:$23.5100 500:$26.0500 100:$26.9300 50:$29.3700 1:$32.3000 10:$32.3000
IGO60R070D1AUMA1 DISTI # 2981531	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, 150DEG C, 125W	954	100:£13.0800 50:£13.8600 10:£14.6300 5:£16.4300 1:£16.6000

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Availability

Stock:: 703
On Order:: 2686
Enter Quantity:

Current price of IGO60R070D1AUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$22.68~~; ~~$22.68~~

5: ~~$22.44~~; ~~$112.20~~

10: ~~$20.92~~; ~~$209.20~~

25: ~~$19.98~~; ~~$499.50~~

100: ~~$17.86~~; ~~$1 786.00~~

250: ~~$17.04~~; ~~$4 260.00~~

500: ~~$16.22~~; ~~$8 110.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IGO60R070D1AUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes