DTA114ESATP

DTA114ESATP
Mfr. #:
DTA114ESATP
Manufacturer:
ROHM Semiconductor
Description:
Bipolar Transistors - Pre-Biased PNP 50V 50MA
Lifecycle:
New from this manufacturer.
Datasheet:
DTA114ESATP Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DTA114ESATP DatasheetDTA114ESATP Datasheet (P4)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ROHM Semiconductor
Product Category:
Bipolar Transistors - Pre-Biased
RoHS:
Y
Configuration:
Single
Transistor Polarity:
PNP
Typical Input Resistor:
10 kOhms
Typical Resistor Ratio:
1
Mounting Style:
SMD/SMT
DC Collector/Base Gain hfe Min:
30
Continuous Collector Current:
50 mA
Peak DC Collector Current:
50 mA
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Ammo Pack
Height:
3 mm
Length:
4 mm
Width:
2 mm
Brand:
ROHM Semiconductor
Product Type:
BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity:
1
Subcategory:
Transistors
Tags
DTA114ESAT, DTA114ESA, DTA114ES, DTA114E, DTA114, DTA11, DTA1, DTA
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
TRANS PREBIAS PNP 300MW SPT
***ark
TRANSISTOR; DIGITAL; PNP; SPT; Transistor Type:General Purpose; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:300mW; Min Hfe:30; ft, Typ:250MHz; Case ;RoHS Compliant: Yes
***nell
TRANSISTOR; DIGITAL; PNP; SPT; Transistor Type:General Purpose; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:300mW; Min Hfe:30; ft, Typ:250MHz; Case Style:SC-72; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; DC Collector Current:100mA; Power Dissipation Pd:300mW; Transistor Case Style:SC-72
***ment14 APAC
TRANSISTOR; DIGITAL; PNP; SPT; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:30; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-72; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:30; Package / Case:SC-72; Power Dissipation Pd:300mW; Termination Type:Through Hole; Transistor Type:General Purpose
Part # Mfg. Description Stock Price
DTA114ESATP
DISTI # DTA114ESATP-ND
ROHM SemiconductorTRANS PREBIAS PNP 300MW SPT
RoHS: Compliant
Min Qty: 5000
Container: Tape & Box (TB)
Limited Supply - Call
    DTA114ESATP
    DISTI # 755-DTA114ESATP
    ROHM SemiconductorBipolar Transistors - Pre-Biased PNP 50V 50MA
    RoHS: Compliant
    0
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      Availability
      Stock:
      Available
      On Order:
      5000
      Enter Quantity:
      Current price of DTA114ESATP is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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