IPB80N06S2L07ATMA3

IPB80N06S2L07ATMA3
Mfr. #:
IPB80N06S2L07ATMA3
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 80A TO263-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPB80N06S2L07ATMA3 Datasheet
Delivery:
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ECAD Model:
More Information:
IPB80N06S2L07ATMA3 more Information
Product Attribute
Attribute Value
Tags
IPB80N06S2L0, IPB80N06S2L, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L07ATMA3
***ure Electronics
Single N-Channel 55 V 6.7 mOhm 130 nC OptiMOS™ Power Mosfet - TO-263-3
***ical
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R
***ronik
MOSFET 55V 6.7mOHM AECQ TO263
***i-Key
MOSFET N-CH 55V 80A TO263-3
***ark
Mosfet, Aec-Q101, N-Ch, 55V, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.0053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 55V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:210W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 55V, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:55V; Resistenza di Attivazione Rds(on):0.0053ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:210W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB80N06S2L07ATMA3
DISTI # V72:2272_06383888
Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R996
  • 500:$1.0233
  • 250:$1.1100
  • 100:$1.1980
  • 25:$1.4038
  • 10:$1.5149
  • 1:$1.9741
IPB80N06S2L07ATMA3
DISTI # IPB80N06S2L07ATMA3CT-ND
Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IPB80N06S2L07ATMA3
    DISTI # IPB80N06S2L07ATMA3DKR-ND
    Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IPB80N06S2L07ATMA3
      DISTI # IPB80N06S2L07ATMA3TR-ND
      Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 1000:$0.9365
      IPB80N06S2L07ATMA3
      DISTI # 32669678
      Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R1000
      • 1000:$1.1232
      IPB80N06S2L07ATMA3
      DISTI # 31440723
      Infineon Technologies AGTrans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R996
      • 500:$1.0233
      • 250:$1.1100
      • 100:$1.1980
      • 25:$1.4038
      • 10:$1.5149
      • 9:$1.9741
      IPB80N06S2L07ATMA3
      DISTI # IPB80N06S2L07ATMA3
      Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S2L07ATMA3)
      RoHS: Compliant
      Min Qty: 439
      Container: Bulk
      Americas - 0
      • 4390:$0.7239
      • 2195:$0.7369
      • 1317:$0.7629
      • 878:$0.7909
      • 439:$0.8209
      IPB80N06S2L07ATMA3
      DISTI # IPB80N06S2L07ATMA3
      Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L07ATMA3)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel
      Americas - 0
      • 6000:$1.0900
      • 10000:$1.0900
      • 2000:$1.1900
      • 4000:$1.1900
      • 1000:$1.2900
      IPB80N06S2L07ATMA3
      DISTI # SP001067890
      Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R (Alt: SP001067890)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel
      Europe - 0
      • 10000:€1.0489
      • 6000:€1.1239
      • 4000:€1.2099
      • 2000:€1.3109
      • 1000:€1.5729
      IPB80N06S2L07ATMA3
      DISTI # 34AC1661
      Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes55
      • 500:$1.0900
      • 250:$1.1700
      • 100:$1.2500
      • 50:$1.3500
      • 25:$1.4500
      • 10:$1.5600
      • 1:$1.8300
      IPB80N06S2L07ATMA3
      DISTI # 726-IPB80N06S2L07ATM
      Infineon Technologies AGMOSFET N-CHANNEL_55/60V
      RoHS: Compliant
      1615
      • 1:$1.8100
      • 10:$1.5400
      • 100:$1.2400
      • 500:$1.0800
      • 1000:$0.8920
      • 2000:$0.8310
      • 5000:$0.8000
      • 10000:$0.7690
      IPB80N06S2L07ATMA3Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 55V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      1741
      • 1000:$0.7500
      • 500:$0.7900
      • 100:$0.8200
      • 25:$0.8600
      • 1:$0.9200
      IPB80N06S2L07ATMA3
      DISTI # 1107147P
      Infineon Technologies AGMOSFET N-CHANNEL OPTIMOS 55V 80A TO263, RL1440
      • 500:£0.7880
      • 200:£0.8430
      • 100:£0.8980
      • 20:£1.0090
      IPB80N06S2L07ATMA3
      DISTI # IPB80N06S2L07
      Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,80A,210W,PG-TO263-3936
      • 100:$1.0500
      • 25:$1.1700
      • 5:$1.3200
      • 1:$1.4600
      IPB80N06S2L07ATMA3
      DISTI # 2781073
      Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-263
      RoHS: Compliant
      55
      • 5000:$1.2900
      • 1000:$1.3500
      • 500:$1.4300
      • 250:$1.6500
      • 100:$1.9600
      • 25:$2.4000
      • 5:$2.7500
      IPB80N06S2L07ATMA3
      DISTI # 2781073
      Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-2631653
      • 500:£0.8240
      • 250:£0.8840
      • 100:£0.9440
      • 10:£1.2100
      • 1:£1.5700
      Image Part # Description
      IPB80N06S2LH5ATMA4

      Mfr.#: IPB80N06S2LH5ATMA4

      OMO.#: OMO-IPB80N06S2LH5ATMA4

      MOSFET N-CHANNEL_55/60V
      IPB80N06S2L06ATMA2

      Mfr.#: IPB80N06S2L06ATMA2

      OMO.#: OMO-IPB80N06S2L06ATMA2

      MOSFET N-CHANNEL_55/60V
      IPB80N06S2L07ATMA3

      Mfr.#: IPB80N06S2L07ATMA3

      OMO.#: OMO-IPB80N06S2L07ATMA3-INFINEON-TECHNOLOGIES

      MOSFET N-CH 55V 80A TO263-3
      IPB80N06S4L07ATMA2

      Mfr.#: IPB80N06S4L07ATMA2

      OMO.#: OMO-IPB80N06S4L07ATMA2-INFINEON-TECHNOLOGIES

      MOSFET N-CH 60V 80A TO263-3
      IPB80N06S2L09ATMA1

      Mfr.#: IPB80N06S2L09ATMA1

      OMO.#: OMO-IPB80N06S2L09ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 55V 80A TO263-3
      IPB80N06S4L07ATMA1

      Mfr.#: IPB80N06S4L07ATMA1

      OMO.#: OMO-IPB80N06S4L07ATMA1-INFINEON-TECHNOLOGIES

      Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
      IPB80N06S2-07

      Mfr.#: IPB80N06S2-07

      OMO.#: OMO-IPB80N06S2-07-1190

      MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
      IPB80N06S2-08  2N0608

      Mfr.#: IPB80N06S2-08 2N0608

      OMO.#: OMO-IPB80N06S2-08-2N0608-1190

      New and Original
      IPB80N06S207ATMA1

      Mfr.#: IPB80N06S207ATMA1

      OMO.#: OMO-IPB80N06S207ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 55V 80A TO263-3
      IPB80N06S207ATMA4

      Mfr.#: IPB80N06S207ATMA4

      OMO.#: OMO-IPB80N06S207ATMA4-INFINEON-TECHNOLOGIES

      MOSFET N-CH 55V 80A TO263-3
      Availability
      Stock:
      Available
      On Order:
      5500
      Enter Quantity:
      Current price of IPB80N06S2L07ATMA3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.12
      $1.12
      10
      $1.07
      $10.66
      100
      $1.01
      $101.02
      500
      $0.95
      $477.05
      1000
      $0.90
      $898.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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