NGTB40N60FL2WG

Mfr. #:: NGTB40N60FL2WG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 600V/40A FAST IGBT FSII T
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB40N60FL2WG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NGTB40N60FL2WG Datasheet NGTB40N60FL2WG Datasheet (P4-P6)NGTB40N60FL2WG Datasheet (P7-P9)NGTB40N60FL2WG Datasheet (P10)
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More Information:: NGTB40N60FL2WG more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.85 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 80 A

Pd - Power Dissipation:: 366 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 80 A

Brand:: ON Semiconductor

Gate-Emitter Leakage Current:: 200 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 30

Subcategory:: IGBTs

Unit Weight:: 1.340411 oz

Tags: NGTB40N60, NGTB40N6, NGTB40, NGTB4, NGTB, NGT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB40N60FL2WG Description

***ical: Trans IGBT Chip N-CH 600V 80A 366000mW 3-Pin(3+Tab) TO-247 Tube

***ied Electronics & Automation: NGTB40N60FL2WG; IGBT Transistor; 80 A 600 V; 1MHz; 3-Pin TO-247

***nell: 600V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

NGTB40N60FL2WG More Information

Field Stop II Series IGBTs: ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
NGTB40N60FL2WG DISTI # V99:2348_07301290	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	8	2500:$1.2715 1000:$1.2872 500:$1.3381 250:$1.3675 100:$1.3812 10:$1.4161 1:$2.7717
NGTB40N60FL2WG DISTI # NGTB40N60FL2WGOS-ND	ON Semiconductor	IGBT 600V 80A 366W TO247 RoHS: Compliant Min Qty: 90 Container: Tube	On Order	90:$4.6842
NGTB40N60FL2WG DISTI # 30243099	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	8	3:$2.7717
NGTB40N60FL2WG DISTI # NGTB40N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube (Alt: NGTB40N60FL2WG) RoHS: Compliant Min Qty: 180 Container: Tube	Asia - 0
NGTB40N60FL2WG DISTI # NGTB40N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube (Alt: NGTB40N60FL2WG) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€4.4800 10:€3.4400 100:€2.9800 250:€2.8300 500:€2.5500
NGTB40N60FL2WG DISTI # NGTB40N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube - Bulk (Alt: NGTB40N60FL2WG) Min Qty: 118 Container: Bulk	Americas - 0	118:$2.6900 120:$2.6900 238:$2.6900 590:$2.5900 1180:$2.5900
NGTB40N60FL2WG DISTI # 70600205	ON Semiconductor	NGTB40N60FL2WG,IGBT Transistor,80 A 600 V,1MHz,3-Pin TO-247 RoHS: Compliant	0	2:$3.6000 10:$3.4200 20:$3.2500 50:$3.1000 100:$2.9400
NGTB40N60FL2WG DISTI # 863-NGTB40N60FL2WG	ON Semiconductor	IGBT Transistors 600V/40A FAST IGBT FSII T RoHS: Compliant	162	1:$5.0500 10:$4.2900 100:$3.7200 250:$3.5300 500:$3.1700 1000:$2.6700 2500:$2.5400
NGTB40N60FL2WG	ON Semiconductor	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	930	1000:$2.7900 500:$2.9400 100:$3.0600 25:$3.1900 1:$3.4300

Image	Part #	Description
	Mfr.#: IRS2113SPBF OMO.#: OMO-IRS2113SPBF	Gate Drivers HI LO SIDE DRVR 600V 2A 120ns
	Mfr.#: FQA32N20C OMO.#: OMO-FQA32N20C	MOSFET 200V N-Channel Advance Q-FET
	Mfr.#: IRS2113SPBF OMO.#: OMO-IRS2113SPBF-INFINEON-TECHNOLOGIES	Gate Drivers HI LO SIDE DRVR 600V 2A 120ns
	Mfr.#: FQA32N20C OMO.#: OMO-FQA32N20C-ON-SEMICONDUCTOR	Darlington Transistors MOSFET 200V N-Channel Advance Q-FET

NGTB40N60FL2WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes