IRFU4105PBF

IRFU4105PBF
Mfr. #:
IRFU4105PBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 55V 25A 45mOhm 22.7nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRFU4105PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFU4105PBF DatasheetIRFU4105PBF Datasheet (P4-P6)IRFU4105PBF Datasheet (P7-P9)IRFU4105PBF Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
25 A
Rds On - Drain-Source Resistance:
45 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
22.7 nC
Pd - Power Dissipation:
48 W
Configuration:
Single
Packaging:
Tube
Height:
6.22 mm
Length:
6.73 mm
Transistor Type:
1 N-Channel
Width:
2.38 mm
Brand:
Infineon / IR
Product Type:
MOSFET
Factory Pack Quantity:
75
Subcategory:
MOSFETs
Part # Aliases:
SP001567818
Unit Weight:
0.139332 oz
Tags
IRFU4105, IRFU41, IRFU4, IRFU, IRF
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.045Ohm;ID 27A;I-Pak (TO-251AA);PD 68W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:27A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 55V, 25A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:55V; On Resistance Rds(on):45mohm; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Junction to Case Thermal Resistance A:2.7°C/W; On State resistance @ Vgs = 10V:45ohm; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:100A; Termination Type:Through Hole; Turn Off Time:40ns; Turn On Time:49ns; Voltage Vds Typ:55V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
IRFU4105PBF
DISTI # IRFU4105PBF-ND
Infineon Technologies AGMOSFET N-CH 55V 27A I-PAK
RoHS: Compliant
Min Qty: 1275
Container: Tube
Limited Supply - Call
    IRFU4105PBF
    DISTI # 70017240
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 0.045Ohm,ID 27A,I-Pak (TO-251AA),PD 68W
    RoHS: Compliant
    0
    • 1275:$1.1900
    • 2550:$1.1660
    • 6375:$1.1310
    • 12750:$1.0830
    • 31875:$1.0120
    IRFU4105PBF
    DISTI # 942-IRFU4105PBF
    Infineon Technologies AGMOSFET MOSFT 55V 25A 45mOhm 22.7nC
    RoHS: Compliant
    0
      IRFU4105PBFInternational Rectifier 
      RoHS: Compliant
      Europe - 525
        IRFU4105PBF
        DISTI # 8659141
        Infineon Technologies AGMOSFET, N, 55V, 25A, I-PAK
        RoHS: Compliant
        0
        • 1:$1.4600
        • 10:$1.2000
        • 100:$0.9750
        • 500:$0.8710
        • 1000:$0.7720
        • 2500:$0.7180
        • 10000:$0.6940
        • 25000:$0.6500
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        Availability
        Stock:
        Available
        On Order:
        1000
        Enter Quantity:
        Current price of IRFU4105PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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