BSC100N10NSF G

BSC100N10NSF G
Mfr. #:
BSC100N10NSF G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
Lifecycle:
New from this manufacturer.
Datasheet:
BSC100N10NSF G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSC100N10NSF G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
90 A
Rds On - Drain-Source Resistance:
10 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
44 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
156 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 2
Transistor Type:
1 N-Channel
Type:
OptiMOS 2 Power-Transistor
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
61 S, 31 S
Fall Time:
7 ns
Product Type:
MOSFET
Rise Time:
23 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
18 ns
Part # Aliases:
BSC100N10NSFGATMA1 BSC1N1NSFGXT SP000379595
Tags
BSC100N10NSF, BSC100N1, BSC100, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
BSC100N10NSFGATMA1
DISTI # V72:2272_06378310
Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
3938
  • 3000:$1.0088
  • 1000:$1.0197
  • 500:$1.1923
  • 250:$1.4512
  • 100:$1.4680
  • 25:$1.7295
  • 10:$1.7508
  • 1:$1.8951
BSC100N10NSFGATMA1
DISTI # BSC100N10NSFGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
68In Stock
  • 1000:$1.1603
  • 500:$1.4004
  • 100:$1.8005
  • 10:$2.2410
  • 1:$2.4800
BSC100N10NSFGATMA1
DISTI # BSC100N10NSFGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
68In Stock
  • 1000:$1.1603
  • 500:$1.4004
  • 100:$1.8005
  • 10:$2.2410
  • 1:$2.4800
BSC100N10NSFGATMA1
DISTI # BSC100N10NSFGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$1.0100
BSC100N10NSFGATMA1
DISTI # 26194995
Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
3938
  • 3000:$1.0088
  • 1000:$1.0197
  • 500:$1.1923
  • 250:$1.4512
  • 100:$1.4680
  • 25:$1.7295
  • 10:$1.7508
  • 9:$1.8951
BSC100N10NSFGXT
DISTI # BSC100N10NSFGATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 15000
  • 5000:$0.9889
  • 10000:$0.9869
  • 20000:$0.9839
  • 30000:$0.9819
  • 50000:$0.9789
BSC100N10NSF G
DISTI # SP000379595
Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R (Alt: SP000379595)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€1.3929
  • 10000:€1.0849
  • 20000:€0.9019
  • 30000:€0.8409
  • 50000:€0.7999
BSC100N10NSFGATMA1
DISTI # SP000379595
Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R (Alt: SP000379595)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€1.0799
  • 10000:€0.8999
  • 20000:€0.8309
  • 30000:€0.7709
  • 50000:€0.7199
BSC100N10NSFGATMA1Infineon Technologies AGSingle N-Channel 100 V 10 mOhm 44 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant
5000Reel
  • 5000:$0.8700
BSC100N10NSFGATMA1Infineon Technologies AGPower Field-Effect Transistor, 11.4A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
1514
  • 1000:$1.1600
  • 500:$1.2200
  • 100:$1.2700
  • 25:$1.3300
  • 1:$1.4300
BSC100N10NSF G
DISTI # 726-BSC100N10NSFG
Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
RoHS: Compliant
164
  • 1:$2.0800
  • 10:$1.7700
  • 100:$1.4200
  • 500:$1.2400
  • 1000:$1.0300
  • 2500:$0.9540
  • 5000:$0.9190
BSC100N10NSFGATMA1
DISTI # 9064375P
Infineon Technologies AGMOSFET N-CH 100V 11.4A OPTIMOS TDSON8, RL95
  • 25:£1.4120
  • 125:£1.1280
  • 250:£1.0580
  • 625:£0.9900
BSC100N10NSFGInfineon Technologies AGINSTOCK3392
    BSC100N10NSFGATMA1
    DISTI # C1S322000598902
    Infineon Technologies AGMOSFETs
    RoHS: Compliant
    3938
    • 250:$1.4512
    • 100:$1.4680
    • 25:$1.7295
    • 10:$1.7508
    BSC100N10NSFGInfineon Technologies AG100V,90A,N Channel Power MOSFET3800
    • 1:$1.9000
    • 100:$1.5800
    • 500:$1.4000
    • 1000:$1.3600
    BSC100N10NSFGATMA1
    DISTI # XSFP00000093429
    Infineon Technologies AGSmallSignalField-EffectTransistor,0.2AI(D),50V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
    RoHS: Compliant
    6730
    • 5000:$1.1600
    • 6730:$1.0900
    Image Part # Description
    EPCQ32ASI8N

    Mfr.#: EPCQ32ASI8N

    OMO.#: OMO-EPCQ32ASI8N

    FPGA - Configuration Memory
    ESDCAN06-2BWY

    Mfr.#: ESDCAN06-2BWY

    OMO.#: OMO-ESDCAN06-2BWY

    TVS Diodes / ESD Suppressors Automotive dual-line Transil, Transient voltage suppressor (TVS) for CAN bus
    TPD1E10B09QDPYRQ1

    Mfr.#: TPD1E10B09QDPYRQ1

    OMO.#: OMO-TPD1E10B09QDPYRQ1

    TVS Diodes / ESD Suppressors Automotive 1-channel ESD in 0402 package with 10pF capacitance and 9V breakdown 2-X1SON -40 to 125
    B32672L6104K000

    Mfr.#: B32672L6104K000

    OMO.#: OMO-B32672L6104K000

    Film Capacitors FILM CAP 0.47uF 20% 400Vdc LS 22.5mm
    ESDCAN06-2BWY

    Mfr.#: ESDCAN06-2BWY

    OMO.#: OMO-ESDCAN06-2BWY-STMICROELECTRONICS

    TVS DIODE 35V 59V SOT323-3
    TPD1E10B09QDPYRQ1

    Mfr.#: TPD1E10B09QDPYRQ1

    OMO.#: OMO-TPD1E10B09QDPYRQ1-TEXAS-INSTRUMENTS

    TVS DIODE 5.5V 14V 2X1SON
    UHD1110-FKA-CL1A13R3Q1BBQFMF3

    Mfr.#: UHD1110-FKA-CL1A13R3Q1BBQFMF3

    OMO.#: OMO-UHD1110-FKA-CL1A13R3Q1BBQFMF3-1190

    R: Any 1 Intensity bin from L - 3a4, RB G:Any 1 Intensity bin from A to C, Any consecutive 3nm withi
    Availability
    Stock:
    Available
    On Order:
    1987
    Enter Quantity:
    Current price of BSC100N10NSF G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.07
    $2.07
    10
    $1.76
    $17.60
    100
    $1.41
    $141.00
    500
    $1.23
    $615.00
    1000
    $1.02
    $1 020.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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