IPD60R380E6BTMA1

IPD60R380E6BTMA1
Mfr. #:
IPD60R380E6BTMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 10.6A DPAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPD60R380E6BTMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
10.6 A
Rds On - Drain-Source Resistance:
340 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
32 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
83 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
IPD60R380
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
56 ns
Typical Turn-On Delay Time:
11 ns
Part # Aliases:
IPD60R380E6 SP001105392
Unit Weight:
0.139332 oz
Tags
IPD60R380E, IPD60R380, IPD60R38, IPD60R3, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R
***i-Key Marketplace
MOSFET N-CH 600V 10.6A TO252-3
***i-Key
COOLMOS N-CHANNEL POWER MOSFET
Part # Mfg. Description Stock Price
IPD60R380E6BTMA1
DISTI # IPD60R380E6BTMA1-ND
Infineon Technologies AGMOSFET NCH 600V 10.6A TO252
RoHS: Not compliant
Container: Bulk
Limited Supply - Call
    IPD60R380E6BTMA1
    DISTI # IPD60R380E6BTMA1
    Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R - Bulk (Alt: IPD60R380E6BTMA1)
    RoHS: Compliant
    Min Qty: 285
    Container: Bulk
    Americas - 0
    • 855:$1.0900
    • 1425:$1.0900
    • 2850:$1.0900
    • 285:$1.1900
    • 570:$1.1900
    IPD60R380E6BTMA1
    DISTI # SP001105392
    Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R (Alt: SP001105392)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Tape and Reel
    Europe - 0
    • 1000:€0.7299
    • 500:€0.7439
    • 100:€0.7639
    • 50:€0.7789
    • 25:€0.8949
    • 10:€1.0709
    • 1:€1.2769
    IPD60R380E6BTMA1Infineon Technologies AGPower Field-Effect Transistor, 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
    RoHS: Not Compliant
    160000
    • 1000:$1.1600
    • 500:$1.2200
    • 100:$1.2700
    • 25:$1.3200
    • 1:$1.4300
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    Availability
    Stock:
    Available
    On Order:
    2000
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    Current price of IPD60R380E6BTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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