FDT86113LZ

Mfr. #:: FDT86113LZ
Manufacturer:: ON Semiconductor
Description:: MOSFET N-CH 100V 3.3A SOT223
Lifecycle:: New from this manufacturer.
Datasheet:: FDT86113LZ Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: FDT86113LZ more Information

Product Attribute
Attribute Value

Manufacturer: Fairchild Semiconductor

Product Category: FETs - Single

Series: PowerTrenchR

Packaging: Digi-ReelR Alternate Packaging

Unit-Weight: 0.008826 oz

Mounting-Style: SMD/SMT

Package-Case: TO-261-4, TO-261AA

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: SOT-223-4

Configuration: Single

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 1W

Transistor-Type: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

Input-Capacitance-Ciss-Vds: 315pF @ 50V

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 3.3A (Tc)

Rds-On-Max-Id-Vgs: 100 mOhm @ 3.3A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Charge-Qg-Vgs: 6.8nC @ 10V

Pd-Power-Dissipation: 2.2 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 1.5 ns

Rise-Time: 1.3 ns

Vgs-Gate-Source-Voltage: +/- 20 V

Id-Continuous-Drain-Current: 3.3 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.7 V

Rds-On-Drain-Source-Resistance: 100 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 10 ns

Typical-Turn-On-Delay-Time: 3.8 ns

Qg-Gate-Charge: 4.1 nC

Forward-Transconductance-Min: 8 S

Tags: FDT861, FDT8, FDT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDT86113LZ Description

***ure Electronics: N-Channel 100 V 0.1 ohm Surface Mount PowerTrench Mosfet - SOT-223

***Semiconductor: N-Channel PowerTrench® MOSFET 100V, 3.3A, 100mΩ

***et Europe: Trans MOSFET N-CH 100V 3.3A 4-Pin(3+Tab) SOT-223 T/R

***nell: MOSFET, N CH, 100V, 3.3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.5V

***rchild Semiconductor: This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

FDT86113LZ More Information

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Part #	Mfg.	Description	Stock	Price
FDT86113LZ DISTI # FDT86113LZCT-ND	ON Semiconductor	MOSFET N-CH 100V 3.3A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6120In Stock	1000:$0.3626 500:$0.4532 100:$0.6118 10:$0.7930 1:$0.9100
FDT86113LZ DISTI # FDT86113LZDKR-ND	ON Semiconductor	MOSFET N-CH 100V 3.3A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6120In Stock	1000:$0.3626 500:$0.4532 100:$0.6118 10:$0.7930 1:$0.9100
FDT86113LZ DISTI # FDT86113LZTR-ND	ON Semiconductor	MOSFET N-CH 100V 3.3A SOT223 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	4000In Stock	4000:$0.3190
FDT86113LZ DISTI # FDT86113LZ	ON Semiconductor	Trans MOSFET N-CH 100V 3.3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FDT86113LZ) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2609 8000:$0.2589 16000:$0.2559 24000:$0.2529 40000:$0.2459
FDT86113LZ DISTI # FDT86113LZ	ON Semiconductor	Trans MOSFET N-CH 100V 3.3A 4-Pin(3+Tab) SOT-223 T/R (Alt: FDT86113LZ) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
FDT86113LZ DISTI # 88T3370	ON Semiconductor	Trans MOSFET N-CH 100V 3.3A 3-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 88T3370) RoHS: Compliant Min Qty: 5 Container: Ammo Pack	Americas - 0	1:$0.7500 10:$0.6200 25:$0.5470 50:$0.4730 100:$0.4000 250:$0.3730 500:$0.3470
FDT86113LZ DISTI # 54T8362	ON Semiconductor	MOSFET Transistor, N Channel, 3.3 A, 100 V, 0.075 ohm, 10 V, 1.7 V	0	1:$0.2720 4000:$0.2720 8000:$0.2700 12000:$0.2660 20000:$0.2540
FDT86113LZ DISTI # 88T3370	ON Semiconductor	MOSFET, N CHANNEL, 100V, 3.3A, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:3.3A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes	6255	1:$0.7500 10:$0.6200 25:$0.5470 50:$0.4730 100:$0.4000 250:$0.3730 500:$0.3470 1000:$0.3200
FDT86113LZ DISTI # 512-FDT86113LZ	ON Semiconductor	MOSFET 100V N-Channel PowerTrench MOSFET RoHS: Compliant	0	1:$0.7500 10:$0.6200 100:$0.4000 1000:$0.3200 4000:$0.2710
FDT86113LZ DISTI # 7599715P	ON Semiconductor	MOSFET N-CHANNEL 100V 3.3A SOT223, RL	1795	50:£0.3480 500:£0.2080 2500:£0.1900 5000:£0.1840
FDT86113LZ	ON Semiconductor		23500
FDT86113LZ DISTI # 2083343RL	ON Semiconductor	MOSFET, N CH, 100V, 3.3A, SOT-223 RoHS: Compliant	0	1:$1.1900 10:$0.9810 100:$0.6340 1000:$0.5070 4000:$0.4290 8000:$0.4130 24000:$0.3960 48000:$0.3910
FDT86113LZ DISTI # 2083343	ON Semiconductor	MOSFET, N CH, 100V, 3.3A, SOT-223 RoHS: Compliant	6255	1:$1.1900 10:$0.9810 100:$0.6340 1000:$0.5070 4000:$0.4290 8000:$0.4130 24000:$0.3960 48000:$0.3910
FDT86113LZ DISTI # 2083343	ON Semiconductor	MOSFET, N CH, 100V, 3.3A, SOT-223 RoHS: Compliant	7105	5:£0.5280 25:£0.4860 100:£0.3030 250:£0.2700 500:£0.2380

Image	Part #	Description
	Mfr.#: FDT86246L OMO.#: OMO-FDT86246L	MOSFET 150V 2A N-Channel Power Trench MOSFET
	Mfr.#: FDT86113LZ OMO.#: OMO-FDT86113LZ	MOSFET 100V N-Channel PowerTrench MOSFET
	Mfr.#: FDT86102LZ OMO.#: OMO-FDT86102LZ	MOSFET 100V N-Channel PowerTrench MOSFET
	Mfr.#: FDT86256 OMO.#: OMO-FDT86256	MOSFET 150V NCh MOSFET PowerTrench
	Mfr.#: FDT86102LZ-NL OMO.#: OMO-FDT86102LZ-NL-1190	New and Original
	Mfr.#: FDT86106 OMO.#: OMO-FDT86106-1190	New and Original
	Mfr.#: FDT86106LZ OMO.#: OMO-FDT86106LZ-ON-SEMICONDUCTOR	MOSFET N-CH 100V 3.2A SOT-223-4
	Mfr.#: FDT86113LZFAI OMO.#: OMO-FDT86113LZFAI-1190	New and Original
	Mfr.#: FDT86244 OMO.#: OMO-FDT86244-ON-SEMICONDUCTOR	MOSFET N-CH 150V 2.8A SOT-223
	Mfr.#: FDT86244-CUT TAPE OMO.#: OMO-FDT86244-CUT-TAPE-1190	New and Original

FDT86113LZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes