MIC94051BM4TR

MIC94051BM4TR
Mfr. #:
MIC94051BM4TR
Manufacturer:
Rochester Electronics, LLC
Description:
Lifecycle:
New from this manufacturer.
Datasheet:
MIC94051BM4TR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
MIC94051, MIC9405, MIC940, MIC94, MIC9, MIC
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We provide 90-360 days warranty.

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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
IC MOSFET P-CHAN 8-MSOP
***i-Key
4-TERMINAL SYMFET P CHANNEL MOSF
***ark
IC; Transistor Type:MOSFET; Package/Case:4-SOT-143; Operating Temperature Range:-40°C to +150°C; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount; No. of Pins:4 ;RoHS Compliant: No
***i-Key
MOSFET N-CH 7V 30MA SOT143
***el Electronic
Switching Voltage Regulators DC-DC CONVERTER FOR LNB
***et
BF904A/SOT4/REEL 7" Q3/T4 STA
***ical
Trans RF MOSFET N-CH 7V 0.04A 4-Pin(3+Tab) SOT-143B T/R
***ponent Stockers USA
2 CHANNEL UHF BAND Si N-CHANNEL RF SMALL SIGNAL MOSFET
***el Electronic
Power Supply System 15-Pin(15+Tab) HZIP Tube
***ure Electronics
BCV62 Series PNP 30 V 100 mA SMT Silicon Double Transistor - SOT-143-4
***p One Stop
Trans GP BJT PNP 30V 0.1A Automotive 4-Pin(3+Tab) SOT-143 T/R
*** Electronic Components
Infineon Bipolar Transistors for Current Mirror Application BCV62C - SOT143-4-1
***ment14 APAC
TRANSISTOR, DUAL PNP SOT-143; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transistor Case Style:SOT-143; Collector Emitter Voltage Vces:650mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2.6mm; External Length / Height:1mm; External Width:2.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:125; No. of Transistors:2; Package / Case:SOT-143; Pin Configuration:b; Power Dissipation Ptot Max:300mW; SMD Marking:3Ls; Termination Type:SMD; Transistor Type:General Purpose; Voltage Vcbo:30V
***ineon
NPN Silicon Double Transistor | Summary of Features: To be used as a current mirror; Good thermal coupling and VBE matching; High current gain; Low collector-emitter saturation voltage; Pb-free (RoHS compliant) package; Qualified according AEC Q105 | Target Applications: For current mirror applications
***trelec
Transistor Polarity = PNP / Configuration = Dual / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 800 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 250 / Power Dissipation (Pd) mW = 300 / Package Type = TO-253-4 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 850
*** Stop Electro
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB
***ical
Trans RF BJT NPN 16V 0.08A 450mW Automotive 4-Pin SOT-143B T/R
***ark
Rf Transistor, Aec-Q101, Npn, Sot143-B Rohs Compliant: Yes
***nell
RF TRANSISTOR, AEC-Q101, NPN, SOT143-B; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 11GHz; Power Dissipation Pd: 450mW; DC Collector Current: 50mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-143B; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
*** Electronic Components
Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR
***ure Electronics
BCV61 Series NPN 30 V 100 mA SMT Silicon Double Transistor - SOT-143-4
***ow.cn
Trans GP BJT NPN 30V 0.1A 300mW Automotive 4-Pin SOT-143 T/R
***ark
; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):0.6V; Power Dissipation, Pd:300mW; DC Current Gain Min (hfe):110 ;RoHS Compliant: Yes
***ineon
NPN Silicon Double Transistor | Summary of Features: To be used as a current mirror; Good thermal coupling and VBE matching; High current gain; Low collector-emitter saturation voltage; Pb-free (RoHS compliant) package; Qualified according AEC Q102 | Target Applications: For current mirror applications
***trelec
Transistor Polarity = NPN / Channels = 2 / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 520 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 250 / Power Dissipation (Pd) mW = 300 / Package Type = SOT-143 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Length mm = 2.9 / Width mm = 1.3 / Height mm = 1 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 200 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900
***ment14 APAC
TRANSISTOR, DUAL, NPN, SOT-143; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520; Transistor Case Style:SOT-143; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2.6mm; External Length / Height:1mm; External Width:2.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:110; No. of Transistors:2; Package / Case:SOT-143; Pin Configuration:a; Power Dissipation Pd:300mW; Power Dissipation Ptot Max:300mW; SMD Marking:1Ls; Termination Type:SMD; Voltage Vcbo:30V
***ure Electronics
BCV61 Series NPN 30 V 100 mA SMT Silicon Double Transistor - SOT-143-4
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
***p One Stop
Trans GP BJT PNP 30V 0.1A Automotive 4-Pin(3+Tab) SOT-143 T/R
***nell
TRANS, PNP, DUAL, -30V, SOT143; Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: -30V; Power Dissipation Pd: 300mW; DC Collector Current: -100mA; DC Current Gain hFE: 125hFE; Transistor Case Style: SOT-143; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
NPN Silicon Double Transistor | Summary of Features: To be used as a current mirror; Good thermal coupling and VBE matching; High current gain; Low collector-emitter saturation voltage; Pb-free (RoHS compliant) package; Qualified according AEC Q103 | Target Applications: For current mirror applications
Part # Mfg. Description Stock Price
MIC94051BM4 TR
DISTI # MIC94051BM4TR-ND
Microchip Technology IncMOSFET P-CH 6V 1.8A 8MSOP
RoHS: Not compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    MIC94051BM4TRMicrel Inc 
    RoHS: Not Compliant
    2565
    • 1000:$0.2000
    • 500:$0.2100
    • 100:$0.2200
    • 25:$0.2300
    • 1:$0.2400
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    Availability
    Stock:
    Available
    On Order:
    3000
    Enter Quantity:
    Current price of MIC94051BM4TR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.30
    $0.30
    10
    $0.28
    $2.85
    100
    $0.27
    $27.00
    500
    $0.26
    $127.50
    1000
    $0.24
    $240.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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